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    S3 MARKING DIODE Search Results

    S3 MARKING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    S3 MARKING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S3 marking DIODE

    Abstract: 1SS367
    Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Applicatio PINNING Features • DESCRIPTION PIN Low forward voltage: VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol


    Original     		PDF 1SS367 OD-323 OD-323 S3 marking DIODE 1SS367

    Marking Code "s3" diode

    Abstract: MARKING 3M SOD-323 Marking "s3" Schottky barrier S3 marking DIODE 1SS367 Marking Code s3 diode
    Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application PINNING Features • DESCRIPTION PIN Low forward voltage: VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol


    Original     		PDF 1SS367 OD-323 OD-323 Marking Code "s3" diode MARKING 3M SOD-323 Marking "s3" Schottky barrier S3 marking DIODE 1SS367 Marking Code s3 diode

    Marking Code "s3" diode

    Abstract: S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode Marking s3 Schottky barrier 1SS367
    Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF 1SS367 OD-323 OD-323 Marking Code "s3" diode S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode Marking s3 Schottky barrier 1SS367

    3m sod

    Abstract: marking 3m sod-323 S3 marking DIODE 1SS367 Marking Code "s3" diode
    Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF 1SS367 OD-323 OD-323 3m sod marking 3m sod-323 S3 marking DIODE 1SS367 Marking Code "s3" diode

    FAIRCHILD SMD MARKING

    Abstract: 1N4148WS Small Signal Diodes 1N4448WS fairchild smd marking code 1N914BWS smd marking QT GENERAL SEMICONDUCTOR SMD DIODES 1N4148WS/1N4448WS/1N914BWS
    Text: 1N4148WS / 1N4448WS / 1N914BWS Small Signal Diodes • • • • • • • Device Marking Code Device Type Device Marking 1N4148WS S1 1N4448WS S2 1N914BWS S3 General Purpose Diodes Fast switching Device TRR < 4.0 ns Very Small and Thin SMD package Moisture Level Sensitivity 1


    Original     		PDF 1N4148WS 1N4448WS 1N914BWS 1N4148WS 1N4448WS OD-323F 1N914BWS FAIRCHILD SMD MARKING Small Signal Diodes fairchild smd marking code smd marking QT GENERAL SEMICONDUCTOR SMD DIODES 1N4148WS/1N4448WS/1N914BWS

    MARKING ta y sod-323

    Abstract: 1N914BWS 1N4148WS
    Text: PRE LIM INAR Y DATA SH EET 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Device Type Device Marking 1N4148WS S1 1N4448WS S2 1N914BWS S3 Small Outline Flat Lead Plastic Package Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted


    Original     		PDF 200mW OD-323 1N4148WS 1N4448WS 1N914BWS 1N4448WS, TC1N4448WS, MARKING ta y sod-323

    S3 marking DIODE

    Abstract: SD101AWS SD101BWS SD101CWS sod323 schottky
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD101AWS-SD101CWS SOD-323 SCHOTTKY DIODES + FEATURES - MARKING: SD101AWS: S1 SD101BWS: S2 SD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


    Original     		PDF OD-323 SD101AWS-SD101CWS OD-323 SD101AWS: SD101BWS: SD101CWS: SD101AWS SD101BWS SD101CWS S3 marking DIODE SD101AWS SD101BWS SD101CWS sod323 schottky

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD101AWS-SD101CWS SCHOTTKY DIODES SOD-323 FEATURES MARKING: SD101AWS: S1 SD101BWS: S2 SD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


    Original     		PDF OD-323 SD101AWS-SD101CWS OD-323 SD101AWS: SD101BWS: SD101CWS: SD101AW SD101BW SD101CW

    S3 marking DIODE

    Abstract: SD101AW SD101BW SD101CW
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SD101AW-SD101CW SCHOTTKY DIODES SOD-123 FEATURES MARKING: SD101AW: S1 SD101BW: S2 SD101CW: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter


    Original     		PDF OD-123 SD101AW-SD101CW OD-123 SD101AW: SD101BW: SD101CW: SD101AW SD101BW SD101CW S3 marking DIODE SD101AW SD101BW SD101CW

    S3 marking DIODE

    Abstract: SD101AWS SD101BW SD101BWS SD101CWS
    Text: SD101AWS-SD101CWS SD101AWS-SD101CWS SOD-323 SCHOTTKY DIODES FEATURES MARKING: SD101AWS: S1 SD101BWS: S2 SD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak Repetitive Peak reverse voltage Working Peak DC Blocking


    Original     		PDF SD101AWS-SD101CWS OD-323 SD101AWS: SD101BWS: SD101CWS: SD101AWS SD101BW SD101CWS S3 marking DIODE SD101AWS SD101BW SD101BWS SD101CWS

    S3 marking DIODE

    Abstract: SD101AW SD101BW SD101CW
    Text: SD101AW-SD101CW SD101AW-SD101CW SCHOTTKY DIODES SOD-123 FEATURES MARKING: SD101AW: S1 SD101BW: S2 SD101CW: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak Repetitive Peak reverse voltage Working Peak DC Blocking Voltage


    Original     		PDF SD101AW-SD101CW OD-123 SD101AW: SD101BW: SD101CW: SD101AW SD101BW SD101CW S3 marking DIODE SD101AW SD101BW SD101CW

    S3 Package

    Abstract: No abstract text available
    Text: SDB110Q Semiconductor Schottky Barrier Diode Features • Low forward voltage : VF= Max. 0.4V @ IF=10mA • Low reverse current : IR= Max. 0.5 ㎂ (@ VR=5V) • High speed switching application Ordering Information Type No. Marking SDB110Q S3 Package Code


    Original     		PDF SDB110Q SDB110Q OD-523 KSD-E009-003 S3 Package

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 SOD-523 SCHOTTKY BARRIER DIODE FEATURES z Small pacakage z Low forward voltage z Low reverse current MARKING: S3 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃


    Original     		PDF OD-523 1SS388 OD-523

    1ss388

    Abstract: S3 marking DIODE
    Text: 1SS388 1SS388 High Speed SWITCHING Diodes SOD-523 1.20 FEATURES Small pacakage Low forward voltage : VF3 = 0.54 typ Low reverse current : IR = 5uA ( typ ) 0.80 0.30 1.60 0.10 0.65 MARKING: S3 SOD-523 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃


    Original     		PDF 1SS388 1SS388 OD-523 S3 marking DIODE

    Untitled

    Abstract: No abstract text available
    Text: SDB110Q Semiconductor Schottky Barrier Diode Features • Low forward voltage : VF= max 0.3V @ IF=1mA • Low reverse current : IR= max 0.5 ㎂ (@ VR=5V) Ordering Information Type No. Marking SDB110Q S3 Package Code SOD-523 Outline Dimensions unit : mm 0.8±0.1


    Original     		PDF SDB110Q OD-523 KSD-E009-002

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 SOD-523 High Speed Switching Diode FEATURES z Small pacakage z Low forward voltage z Low reverse current MARKING: S3 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃


    Original     		PDF OD-523 1SS388 OD-523

    S3 marking DIODE

    Abstract: 1ss388 Marking s3
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 High Speed SWITCHING Diodes SOD-523 FEATURES Small pacakage Low forward voltage : VF3 = 0.54 typ Low reverse current : IR = 5uA ( typ ) MARKING: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃


    Original     		PDF OD-523 1SS388 OD-523 1SS388 S3 marking DIODE Marking s3

    b631 transistor

    Abstract: S3 marking DIODE b631 Q62702-B631
    Text: BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 51 S3 1=A Q62702-B631 Package 2=A 3 = C1/C2 SOT-23


    Original     		PDF Q62702-B631 OT-23 Jan-09-1997 b631 transistor S3 marking DIODE b631 Q62702-B631

    Untitled

    Abstract: No abstract text available
    Text: BBY 51 Silicon Tuning Diode 3 • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment 2 1 Type Marking BBY 51 S3 Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT-23


    Original     		PDF VPS05161 OT-23 Oct-05-1999 EHD07128

    1ss388

    Abstract: S3 marking DIODE
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 High Speed SWITCHING Diodes SOD-523 + FEATURES z Small pacakage z Low forward voltage : VF3 = 0.54 typ z Low reverse current : IR = 5uA ( typ ) - MARKING: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃


    Original     		PDF OD-523 1SS388 OD-523 1SS388 S3 marking DIODE

    Untitled

    Abstract: No abstract text available
    Text: BBY 51 Silicon Tuning Diode 3  High Q hyperabrupt dual tuning diode  Designed for low tuning voltage operation  For VCO's in mobile communications equipment 2 1 Type Marking BBY 51 S3 Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT-23 Maximum Ratings


    Original     		PDF VPS05161 OT-23 Dec-07-2000 EHD07128

    FMMT3903

    Abstract: BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31 BFQ31A
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS Device Type Standard marking BCV71 K7 BCV72 K8 BCW29 C1 C2 BCW30 BCW31 TRANSISTORS Reverse Joggle m arking Device Type K6 K9 C4 Standard marking Reverse Joggle marking BFQ31 S2 S3


    OCR Scan     		PDF OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 FMMT3903 BCW33

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BBY51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Ordering Code Pin Configuration BBY51 S3 Q62702-B631 1=A Package < Marking II CM Type


    OCR Scan     		PDF BBY51 Q62702-B631 OT-23 fl235bOS 23Sb05

    rs 434 065

    Abstract: 434 diode
    Text: SIEMENS BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Pin Configuration Package < Q62702-B631 II CM Ordering Code S3 I! Marking BBY 51 < Type


    OCR Scan     		PDF Q62702-B631 OT-23 rs 434 065 434 diode