S3 marking DIODE
Abstract: 1SS367
Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Applicatio PINNING Features • DESCRIPTION PIN Low forward voltage: VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol
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1SS367
OD-323
OD-323
S3 marking DIODE
1SS367
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Marking Code "s3" diode
Abstract: MARKING 3M SOD-323 Marking "s3" Schottky barrier S3 marking DIODE 1SS367 Marking Code s3 diode
Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application PINNING Features • DESCRIPTION PIN Low forward voltage: VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol
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1SS367
OD-323
OD-323
Marking Code "s3" diode
MARKING 3M SOD-323
Marking "s3" Schottky barrier
S3 marking DIODE
1SS367
Marking Code s3 diode
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3m sod
Abstract: marking 3m sod-323 S3 marking DIODE 1SS367 Marking Code "s3" diode
Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC
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1SS367
OD-323
OD-323
3m sod
marking 3m sod-323
S3 marking DIODE
1SS367
Marking Code "s3" diode
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Marking Code "s3" diode
Abstract: S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode Marking s3 Schottky barrier 1SS367
Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC
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1SS367
OD-323
OD-323
Marking Code "s3" diode
S3 DIODE schottky
S3 marking DIODE
Marking "s3" Schottky barrier
Diode marking CODE 1M
Marking Code s3 diode
Marking s3 Schottky barrier
1SS367
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 SOD-523 SCHOTTKY BARRIER DIODE FEATURES z Small pacakage z Low forward voltage z Low reverse current MARKING: S3 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃
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OD-523
1SS388
OD-523
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S3 DIODE schottky
Abstract: S3 marking DIODE Marking s3 Schottky barrier SDB110Q Marking Code s3 diode
Text: SDB110Q Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • Battery changing diode Ordering Information Type No. Marking SDB110Q S3 Package Code SOD-523 Outline Dimensions unit : mm 1.2±0.1 2 1 0~0.1 2 0.6±0.1
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SDB110Q
OD-523
KSD-E009-001
200pF,
S3 DIODE schottky
S3 marking DIODE
Marking s3 Schottky barrier
SDB110Q
Marking Code s3 diode
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S3 marking DIODE
Abstract: SD101AWS SD101BWS SD101CWS sod323 schottky
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD101AWS-SD101CWS SOD-323 SCHOTTKY DIODES + FEATURES - MARKING: SD101AWS: S1 SD101BWS: S2 SD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OD-323
SD101AWS-SD101CWS
OD-323
SD101AWS:
SD101BWS:
SD101CWS:
SD101AWS
SD101BWS
SD101CWS
S3 marking DIODE
SD101AWS
SD101BWS
SD101CWS
sod323 schottky
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD101AWS-SD101CWS SCHOTTKY DIODES SOD-323 FEATURES MARKING: SD101AWS: S1 SD101BWS: S2 SD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OD-323
SD101AWS-SD101CWS
OD-323
SD101AWS:
SD101BWS:
SD101CWS:
SD101AW
SD101BW
SD101CW
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S3 marking DIODE
Abstract: SD101AW SD101BW SD101CW
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SD101AW-SD101CW SCHOTTKY DIODES SOD-123 FEATURES MARKING: SD101AW: S1 SD101BW: S2 SD101CW: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter
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OD-123
SD101AW-SD101CW
OD-123
SD101AW:
SD101BW:
SD101CW:
SD101AW
SD101BW
SD101CW
S3 marking DIODE
SD101AW
SD101BW
SD101CW
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S3 marking DIODE
Abstract: SD101AWS SD101BW SD101BWS SD101CWS
Text: SD101AWS-SD101CWS SD101AWS-SD101CWS SOD-323 SCHOTTKY DIODES FEATURES MARKING: SD101AWS: S1 SD101BWS: S2 SD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak Repetitive Peak reverse voltage Working Peak DC Blocking
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SD101AWS-SD101CWS
OD-323
SD101AWS:
SD101BWS:
SD101CWS:
SD101AWS
SD101BW
SD101CWS
S3 marking DIODE
SD101AWS
SD101BW
SD101BWS
SD101CWS
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S3 marking DIODE
Abstract: SD101AW SD101BW SD101CW
Text: SD101AW-SD101CW SD101AW-SD101CW SCHOTTKY DIODES SOD-123 FEATURES MARKING: SD101AW: S1 SD101BW: S2 SD101CW: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak Repetitive Peak reverse voltage Working Peak DC Blocking Voltage
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SD101AW-SD101CW
OD-123
SD101AW:
SD101BW:
SD101CW:
SD101AW
SD101BW
SD101CW
S3 marking DIODE
SD101AW
SD101BW
SD101CW
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S3 Package
Abstract: No abstract text available
Text: SDB110Q Semiconductor Schottky Barrier Diode Features • Low forward voltage : VF= Max. 0.4V @ IF=10mA • Low reverse current : IR= Max. 0.5 ㎂ (@ VR=5V) • High speed switching application Ordering Information Type No. Marking SDB110Q S3 Package Code
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SDB110Q
SDB110Q
OD-523
KSD-E009-003
S3 Package
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Untitled
Abstract: No abstract text available
Text: SDB110Q Semiconductor Schottky Barrier Diode Features • Low forward voltage : VF= max 0.3V @ IF=1mA • Low reverse current : IR= max 0.5 ㎂ (@ VR=5V) Ordering Information Type No. Marking SDB110Q S3 Package Code SOD-523 Outline Dimensions unit : mm 0.8±0.1
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SDB110Q
OD-523
KSD-E009-002
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S4 46a DIODE schottky
Abstract: APT0406 APT0501 APT0502 APTM50HM75SCTG A1012-0
Text: APTM50HM75SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module VBUS CR1A Q3 G3 CR2A Q2 S3 CR4A CR2B CR4B Q4 G2 G4 S2 S4 0/VBUS NTC1 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior
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APTM50HM75SCTG
S4 46a DIODE schottky
APT0406
APT0501
APT0502
APTM50HM75SCTG
A1012-0
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CD0603B00340
Abstract: Marking "s3" Schottky barrier
Text: PL IA NT Features • ■ S3 *R oH S CO M ■ ■ Applications Lead free as standard RoHS compliant* Leadless Low stored charge ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD0603/1005 Schottky Barrier Chip Diode Series
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CD0603/1005
Schott61
CD0603B00340
Marking "s3" Schottky barrier
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M2805
Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Text: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged
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APM2805QA
-20V/-2
500mA.
JESD-22,
M2805
APM2805
APM2805QA
JESD-22
MO-229
ANPEC
c125t
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M2805
Abstract: No abstract text available
Text: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • C8 A1 RDS ON = 120mΩ(typ.) @ VGS= -2.5V A2 S3 Super High Dense Cell Design Reliable and Rugged G4 Top View of DFN3x2-8 D (5, 6) C (7, 8) S (3) A (1, 2) VF=0.45V (typ.) @ If=500mA.
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APM2805QA
-20V/-2
500mA.
APM2805
150oC
Co0-2000
M2805
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S3 DIODE schottky
Abstract: 100N10S1
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)
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100N10S1
100N10S2
100N10S3
OT-227
E153432
S3 DIODE schottky
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S3 DIODE schottky
Abstract: 100N1
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)
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100N10S1
100N10S2
100N10S3
OT-227
E153432
S3 DIODE schottky
100N1
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A2 DIODE SMD CODE MARKING
Abstract: smd diode marking code a2 S3 marking DIODE smd diode code s3 A2 SMD CODE MARKING marking code e1 smd smd diode code l4 marking K2 diode smd schottky diode s3 - 13 DIODE smd marking A1
Text: Spec. No. : C302S3-H Issued Date : 2004.04.13 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54S3/BAT54AS3 BAT54CS3/BAT54SS3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-323 very small plastic SMD package.
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C302S3-H
BAT54S3/BAT54AS3
BAT54CS3/BAT54SS3
OT-323
BAT54
BAT54A
BAT54C
OT-323
BAT54S
UL94V-0
A2 DIODE SMD CODE MARKING
smd diode marking code a2
S3 marking DIODE
smd diode code s3
A2 SMD CODE MARKING
marking code e1 smd
smd diode code l4
marking K2 diode
smd schottky diode s3 - 13
DIODE smd marking A1
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Untitled
Abstract: No abstract text available
Text: 1SS388 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Turn-On Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
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1SS388
OD-523
OD-523,
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: SDB110Q SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description The SDB110Q Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature
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SDB110Q
SDB110Q
OD-523
25-AUG-10
KSD-D6D018-000
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Diodo Schottky
Abstract: DIODO
Text: 4A 65VT»150t Fully Molded similar to TO-220AC FSQS04A065 ttfl« 0 * ^ Nihon Inter Electronics Corporation Specification. lie 'S3 y Construction f f lìÉ Application h K ' 7 ? ' 4 Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS Ta=25cC Unless otherwise specified
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OCR Scan
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65VTjw150V
O-22QAC
FSQS04A065
50Hzhalf
FSQS04A065
20mVRMS
100kHz
UL94V-0
Diodo Schottky
DIODO
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schottky diode 43t
Abstract: C25T05Q C25T06Q S3 DIODE schottky
Text: SCHOTTKY BARRIER DIODE C25 T05 Q C25T06Q 2 7 .7 A / 5 0 ~ 6 0 V 4.8U 89 4 .4 Ü 7 3 P L S Q U A R E -P A K f 10.6 .417) f 09.6Î.378) .6 (.3 " 1 0 .li.3 9 8 ) 1-81.071)* i _ 0 ~ 0 .3 (. 0 1 2 ) FEATURES I.4(.Q 55) I TltW) L- »Similar to TO-263AB Case,
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C25T05Q
C25T06Q
O-263AB
35C925)
3C118)
bbl5123
schottky diode 43t
C25T06Q
S3 DIODE schottky
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