Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    S1P SOT23 Search Results

    S1P SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    S1P SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    npn 2222 transistor

    Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 Jul-11-2001 npn 2222 transistor s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056

    br 2222 npn

    Abstract: SMBT2222A SMBT2907A
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 May-29-2001 br 2222 npn SMBT2222A SMBT2907A

    h22e

    Abstract: No abstract text available
    Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP Type Marking SMBT2222A/MMBT2222A s1P 1 Pin Configuration 1=B 2=E Package


    Original     		PDF SMBT2222A/MMBT2222A SMBT2907AW SMBT2222A/MMBT2222A h22e

    h11E

    Abstract: No abstract text available
    Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P


    Original     		PDF SMBT2222A/MMBT2222A SMBT2907A MMBT2907A SMBT2222A/MMBT2222A h11E

    SMBT2907AW

    Abstract: MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23
    Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration


    Original     		PDF SMBT2222A/MMBT2222A SMBT2907AW SMBT2222A/MMBT2222A BCW66 SMBT2907AW MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23

    s1P SOT23

    Abstract: 619 SOT23-3 h11e
    Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration


    Original     		PDF SMBT2222A/MMBT2222A SMBT2907AW SMBT2222A/MMBT2222A s1P SOT23 619 SOT23-3 h11e

    MARKING s1P

    Abstract: 99V0
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 Nov-30-2001 2222/A EHP00742 EHP00743 MARKING s1P 99V0

    MARKING s1P

    Abstract: No abstract text available
    Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161


    Original     		PDF SMBT2222A/ MMBT2222A SMBT2907A VPS05161 MARKING s1P

    npn 2222 transistor

    Abstract: MMBT2222A SMBT2222A SMBT2907A MARKING s1P
    Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161


    Original     		PDF SMBT2222A/ MMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 npn 2222 transistor MMBT2222A SMBT2222A SMBT2907A MARKING s1P

    Untitled

    Abstract: No abstract text available
    Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161


    Original     		PDF SMBT2222A/ MMBT2222A SMBT2907A VPS05161

    CHT2222AGP

    Abstract: transistor s1p
    Text: CHENMKO ENTERPRISE CO.,LTD CHT2222AGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


    Original     		PDF CHT2222AGP OT-23 OT-23) 600mA) CHT2222AGP transistor s1p

    2SD882P

    Abstract: ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA 200 500 200 150 150 150 500 200 100 100 100 50 500 200 600 600 100 100 100 150 150 150 200


    Original     		PDF SC-62 2SD882P ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23

    2222 NPN

    Abstract: br 2222 npn npn 2222 2222a 2222 2907 pnp 2222 A DSA0032624 equivalent of 2222 NPN Q68000-A6473
    Text: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration


    Original     		PDF Q68000-A6481 Q68000-A6473 OT-23 2222 NPN br 2222 npn npn 2222 2222a 2222 2907 pnp 2222 A DSA0032624 equivalent of 2222 NPN Q68000-A6473

    2222a

    Abstract: br 2222 npn 2222 A npn 2222 Q68000-A6473 Q68000-A6481 tr 2222 2222av marking code sot-23 697 NPN transistors sot-23 26
    Text: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● 2 3 1 Type Marking Ordering Code (tape and reel) Pin Configuration


    Original     		PDF Q68000-A6481 Q68000-A6473 OT-23 2222a br 2222 npn 2222 A npn 2222 Q68000-A6473 Q68000-A6481 tr 2222 2222av marking code sot-23 697 NPN transistors sot-23 26

    NB SOT-23 NPN

    Abstract: ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to


    Original     		PDF CH3904T CHT2222T 2SC4097 CH3904W CHT05 CHT42 CHTA42L CHT44 2SC2411K 2SC2412K NB SOT-23 NPN ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223

    CHT2222APT

    Abstract: transistor s1p
    Text: CHENMKO ENTERPRISE CO.,LTD CHT2222APT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


    Original     		PDF CHT2222APT OT-23 OT-23) 600mA) 200ns CHT2222APT transistor s1p

    transistor s1p

    Abstract: CHT4401PT SOT23 timer ic S1p MARKING
    Text: CHENMKO ENTERPRISE CO.,LTD CHT4401PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Low voltage Max.=40V . * High saturation current capability.


    Original     		PDF CHT4401PT OT-23 600mA) 200ns transistor s1p CHT4401PT SOT23 timer ic S1p MARKING

    AD8051

    Abstract: AD8052 AD8054 RU-14
    Text: a FEATURES Low Cost Single AD8051 , Dual (AD8052) and Quad (AD8054) Voltage Feedback Architecture Fully Specified at +3 V, +5 V and ؎5 V Supplies Single Supply Operation Output Swings to Within 25 mV of Either Rail Input Voltage Range: –0.2 V to +4 V; VS = +5 V


    Original     		PDF AD8051) AD8052) AD8054) AD8051/AD8052) AD8051 OT-23-5 AD8052 AD8054 TSSOP-14 RU-14

    s1P SOT23

    Abstract: S1p MARKING BBY31 MARKING S1P SOT23 DIODE marking CODE 28 "Variable Capacitance Diode" VARIABLE CAPACITANCE DIODE
    Text: b3E J> m _ bbSB'lEM GQ7427M 72Ö « S I C 3 NAPC/PHILIPS BBY31 J SEniCOND FOR D E T A IL E D IN F O R M A T IO N SEE T H E L A TE S T ISSUE OF H A N D B O O K SC01 OR D A T A S H E E T VARIABLE CAPACITANCE DIODE S ilicon planar variable capacitance diode in a m icro m in ia tu re envelope. It is intended fo r e le ctro n ic


    OCR Scan     		PDF GQ7427M BBY31 OT-23. s1P SOT23 S1p MARKING BBY31 MARKING S1P SOT23 DIODE marking CODE 28 "Variable Capacitance Diode" VARIABLE CAPACITANCE DIODE

    PXTA14

    Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
    Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.


    OCR Scan     		PDF OT143, OT323, OD123 OD323 BZV49 BAW56W BSR40 2PB709AR BAW56 BSR41 PXTA14 mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401

    s1P SOT23

    Abstract: BBY39 S2p SOT-23 SOD-23 BB219 Diode SM 48 smd code BBY31 175 sot-23 XL SOT23 am SMD sot23
    Text: Variable Capacitance SM D’ Diodes Variable Capacitance SMD Diodes Description Mechanical Data Philips Components variable capacitance varicap diodes are optimized to exhibit linear, highly dependable dynamic capacitance characteristics over the entire rated


    OCR Scan     		PDF T-143 BB804 BBY31 BBY39 BBY40 BBY42 BBY62 OT-23 OT-143 OD-80C s1P SOT23 S2p SOT-23 SOD-23 BB219 Diode SM 48 smd code BBY31 175 sot-23 XL SOT23 am SMD sot23

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) PinC Contigui ation


    OCR Scan     		PDF Q68000-A6481 Q68000-A6473 OT-23 2222/A fi235bD5 0155S2S a235b05 012552b

    2222A

    Abstract: npn 2222 2222 A 2222 kn a MARKING s1P Q68000-A6481 kn sot23 BT2222
    Text: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) Pin Configuration


    OCR Scan     		PDF Q68000-A6481 Q68000-A6473 OT-23 2211/t 2222A npn 2222 2222 A 2222 kn a MARKING s1P kn sot23 BT2222

    702 TRANSISTOR npn

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ BFR106 UBB773 transistor t 2180 IC 1496 function L7E transistor 22741 transistor s1p 8115, transistor
    Text: m b b s a T a i □ d e s 2 d d 2 3 T « a p x P hilips S e m i c o n d u c t o r s _P ro d u c ^ p e c ific a tio n - N AnER PHILIPS/DISCRETE b?E D NPN 5 GHz wideband transistor ^ BFR106 PINNING


    OCR Scan     		PDF bbS3T31 BFR106 702 TRANSISTOR npn RF NPN POWER TRANSISTOR C 10-12 GHZ BFR106 UBB773 transistor t 2180 IC 1496 function L7E transistor 22741 transistor s1p 8115, transistor