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    S0921 Search Results

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    S0921 Price and Stock

    Harwin S0921-46R

    RFI SHLD CLIP CUPRO NICK TIN SLD
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    DigiKey S0921-46R Digi-Reel 6,019 1
    • 1 $1.33
    • 10 $0.812
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    S0921-46R Cut Tape 6,019 1
    • 1 $1.33
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    S0921-46R Reel 4,800 600
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    Mouser Electronics S0921-46R 1,772
    • 1 $0.76
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    Newark S0921-46R Bulk 576 1
    • 1 $0.78
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    TTI S0921-46R Reel 600 600
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    Avnet Abacus S0921-46R Reel 8 Weeks 1,800
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    Essentra Components 12SWS0921

    SHOULDER WASHER .240 ID .480 OD
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    DigiKey 12SWS0921 Bulk 1,494 1
    • 1 $0.11
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    Mouser Electronics 12SWS0921
    • 1 $0.1
    • 10 $0.069
    • 100 $0.059
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    Pi Supply PIS-0921

    ZEROBORG COMPLETE QUAD MOTOR CON
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    DigiKey PIS-0921 Bulk 15
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    OMRON Industrial Automation XM2S-0921

    CONNECTOR
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    DigiKey XM2S-0921 Bulk 1
    • 1 $10.6
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    Newark XM2S-0921 Bulk 50
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    ECS International Inc ECS-092.1-22-28AX-TR

    Crystal 92.1MHz 22pF T/R - Tape and Reel (Alt: ECS-092.1-22-28AX-)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas ECS-092.1-22-28AX-TR Reel 24,000 22 Weeks 1,000
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    Find more S0921 price and stock on Findchips.com

    S0921 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S0921-46R Harwin RFI SHIELD CLIP CORNER TIN SMD Original PDF

    S0921 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Vishay DaTE CODE tsop-6

    Abstract: si3410
    Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Vishay DaTE CODE tsop-6 si3410

    95xxx

    Abstract: si3434 si3495
    Text: Si3495DV Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si3495DV 2002/95/EC Si3495DV-T1-E3 Si3495DV-T1-GE3 95xxx 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 95xxx si3434 si3495

    SI7288

    Abstract: No abstract text available
    Text: New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 20 0.022 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF Si7288DP 2002/95/EC Si7288DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI7288

    Untitled

    Abstract: No abstract text available
    Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5858DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability


    Original     		PDF SiHP22N60S O-220 2002/95/EC SiHP22N60S-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5858DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI7288DP-T1-GE3

    Abstract: SI7288 Si7288DP
    Text: New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 20 0.022 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF Si7288DP 2002/95/EC Si7288DP-T1-GE3 18-Jul-08 SI7288

    SQJ463EP-T1-GE3

    Abstract: SQJ463 SQJ463EP NC2030
    Text: SQJ463EP Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) at VGS = - 10 V 0.010 RDS(on) (Ω) at VGS = - 4.5 V 0.015 ID (A) - 11 Configuration Single PowerPAK SO-8L Single S m 5m 6.1 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SQJ463EP 2002/95/EC AEC-Q101 SQJ463EP-T1-GE3 18-Jul-08 SQJ463EP-T1-GE3 SQJ463 SQJ463EP NC2030

    si4829

    Abstract: No abstract text available
    Text: Si4829DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.215 at VGS = - 4.5 V -2 0.320 at VGS = - 2.5 V -2 Qg (Typ.) 2.6 nC SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4829DY 2002/95/EC Si4829DY-T1-E3 18-Jul-08 si4829

    si3407

    Abstract: SI3407DV-T1-GE3 Si3407DV
    Text: Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V - 8.0a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3407DV 2002/95/EC Si3407DV-T1-E3 Si3407DV-T1-GE3 18-Jul-08 si3407

    Si5858DU-T1-GE3

    Abstract: si5858
    Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5858DU 2002/95/EC 18-Jul-08 Si5858DU-T1-GE3 si5858

    Untitled

    Abstract: No abstract text available
    Text: Si4618DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.017 at VGS = 10 V 0.0195 at VGS = 4.5 V 0.010 at VGS = 10 V 0.0115 at VGS = 4.5 V ID (A)a Qg (Typ.) 8.0


    Original     		PDF Si4618DY 2002/95/EC Si4618DY-T1-E3 Si4618DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si3442BDV

    Abstract: Si3442BDV-T1-E3
    Text: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 4.2 0.090 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3442BDV 2002/95/EC Si3442BDV-T1-E3 Si3442BDV-T1-GE3 12lectual 18-Jul-08

    95XXX

    Abstract: Si3495DV Si3495DV-T1-GE3 V2500C
    Text: Si3495DV Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si3495DV 2002/95/EC Si3495DV-T1-E3 Si3495DV-T1-GE3 95xxx 18-Jul-08 95XXX V2500C

    Untitled

    Abstract: No abstract text available
    Text: Si3586DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 3.4 0.070 at VGS = 2.5 V 3.2 0.100 at VGS = 1.8 V 2.5 0.110 at VGS = - 4.5 V - 2.5 0.145 at VGS = - 2.5 V


    Original     		PDF Si3586DV 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si3850ADV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.300 at VGS = 4.5 V 1.4 0.410 at VGS = 3.0 V 1.2 0.640 at VGS = - 4.5 V - 0.96 0.980 at VGS = - 3.0 V


    Original     		PDF Si3850ADV 2002/95/EC Si3850ADV-T1-E3 Si3850ADV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V - 8.0a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3407DV 2002/95/EC Si3407DV-T1-E3 Si3407DV-T1-GE3 11-Mar-11

    Si4914B

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY 2002/95/EC Si4914BDY-T1-E3 Si4914BDY-T1-GE3 11-Mar-11 Si4914B

    Untitled

    Abstract: No abstract text available
    Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3850ADV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.300 at VGS = 4.5 V 1.4 0.410 at VGS = 3.0 V 1.2 0.640 at VGS = - 4.5 V - 0.96 0.980 at VGS = - 3.0 V


    Original     		PDF Si3850ADV 2002/95/EC Si3850ADV-T1-E3 Si3850ADV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4830CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0


    Original     		PDF Si4830CDY 2002/95/EC Si4830CDY-T1-E3 Si4830CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4830CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0


    Original     		PDF Si4830CDY 2002/95/EC Si4830CDY-T1-E3 Si4830CDY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4834CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0


    Original     		PDF Si4834CDY 2002/95/EC Si4834CDY-T1-E3 Si4834CDY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12