M9226
Abstract: TGS 308 S 8050 d 331 transistor TGA 345 tga 422 Ox51 s1507 MSS0607 5100H MSS1207
Text: MOSEL VITELIC INC. MSS0307/S0607/S0907/S1207/S1507/S1807 September 1996 3"/ 6"/ 9"/ 12" / 15" / 18" VOICE ROM Features Single power supply can operate at 2.4 V through 6.0 V. Current output can drive 8 ohm speaker with a transistor. The voice content can be separated to 32 sections.
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MSS0307/S0607/S0907/S1207/S1507/S1807
20000h)
dy17/31
dy23/31
PID247*
M9226
TGS 308
S 8050 d 331 transistor
TGA 345
tga 422
Ox51
s1507
MSS0607
5100H
MSS1207
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Diode HER 507
Abstract: No abstract text available
Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V
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Si4412DY
2002/95/EC
Si4412DY-T1-E3
Si4412DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Diode HER 507
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si410
Abstract: Si4104
Text: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchET Power MOSFET • 100 % Rg Tested
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Si4104DY
2002/95/EC
Si4104DY-T1-E3
Si4104DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si410
Si4104
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Si9407BDY-T1-GE3
Abstract: Si9407BDY Si9407BDY-T1-E3
Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si9407BDY
2002/95/EC
Si9407BDY-T1-E3
Si9407BDY-T1-GE3
11-Mar-11
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Si4410BDY
Abstract: Si4410BDY-T1-E3 Si4410BDY-T1-GE3
Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4410BDY
2002/95/EC
Si4410BDY-T1-E3
Si4410BDY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested
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Si3430DV
2002/96/EC
Si3430DV-T1-E3
Si3430DV-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/96/EC
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Si4426DY
2002/96/EC
Si4426DY-T1-E3
Si4426DY-T1-GE3
18-Jul-08
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SI3433BDV
Abstract: No abstract text available
Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition
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Si3433BDV
2002/96/EC
Si3433BDV-T1-E3
Si3433BDV-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 6.7 0.038 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Si3424DV
2002/95/EC
Si3424DV-T1-E3
Si3424DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4952DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.023 at VGS = 10 V 8 0.028 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si4952DY
2002/95/EC
Si4952DY-T1-E3
Si4952DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SI4920DY
Abstract: No abstract text available
Text: Si4920DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.025 at VGS = 10 V ± 6.9 0.035 at VGS = 4.5 V ± 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si4920DY
2002/95/EC
Si4920DY-T1-E3
Si4920DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4423DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0075 at VGS = - 4.5 V - 14 0.009 at VGS = - 2.5 V - 13 0.0115 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4423DY
2002/95/EC
Si4423DY-T1-E3
Si4423DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Si4426DY
2002/95/EC
Si4426DY-T1-E3
Si4426DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si3430
Abstract: No abstract text available
Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested
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Si3430DV
2002/95/EC
Si3430DV-T1-E3
Si3430DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si3430
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Untitled
Abstract: No abstract text available
Text: Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 7.4 0.028 at VGS = 4.5 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si4942DY
2002/95/EC
Si4942DY-T1-E3
Si4942DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si4682DY
Abstract: Si4682DY-T1-E3 Si4682DY-T1-GE3
Text: Si4682DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0135 at VGS = 4.5 V 13 Qg (Typ.) 11 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology
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Si4682DY
2002/95/EC
Si4682DY-T1-E3
Si4682DY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio
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Si3403DV
2002/95/EC
Si3403DV-T1-E3
Si3403DV-T1-GE3
11-Mar-11
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SI3430DV-T1-E3
Abstract: No abstract text available
Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested
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Original
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PDF
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Si3430DV
2002/95/EC
Si3430DV-T1-E3
Si3430DV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si4682DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0135 at VGS = 4.5 V 13 Qg (Typ.) 11 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology
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Original
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Si4682DY
2002/95/EC
Si4682DY-T1-E3
Si4682DY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V
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Si4500BDY
2002/95/EC
Si4500BDY-T1-E3
Si4500BDY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: REV. 1 z ECN.NO. MODIFY.CONTENT S090S043 Initial release S0907005 Change The Swiioh Pin DATE 5 /8 0 '0 8 7/01’09 11.95 5.975 L55±0.13 « 1 3 ^mphe J Y J W No. 8 \ -N o .1 0.95±0.10 g o f 11.10 11.10±o.io 1 l o f 11.95 rm ififTimi m J jj Card Center-^-—
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S090S043
S0907005
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micro SD Card connector
Abstract: S0905043
Text: REV. 1 Z ECN.NO. MODIFY.CONTENT DATE S0905043 In itia l release S0907005 Chang* The Sw iioh P in *09 7/01*09 5 /8 0 11.95 5.975 U55±0.13 1 1 « Amphenol 2.40±o.i5 CD Switch IZ Z t I -Hi ~n 2-0.85±o.ts 8 - 0 . 3 0 ± o.05 7-1.10±o.io 7.70 ±o.w Card, Center-
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S0905043
S0907005
micro SD Card connector
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OX36D-S-MR-R
Abstract: dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117
Text: ABOWEI n r r y /^ B i i ij Products BOWEI IN TEG RA TED C IR C U IT S C O .,LTD 2 0 0 7 .5 A bow ei BOWEI is one ofthe leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and manufacturing
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12000-square-meter
IS09000-2000,
Min15
MXF3200
MXF3200A
12WCMXF3200)
6WCMXF3200A)
OX36D-S-MR-R
dox5
18M08
transistor z7m
st z7m
Bowei Integrated Circuits
oxln50d
TXM11
tt 2246
transistor K117
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Untitled
Abstract: No abstract text available
Text: Militar/ Standard Products UT22VP10 Universal R A D pal Product Brief UNITED TECHNOLOGIES MICROELECTRONICS CENTER January 1994 FEATURES □ Low operating current - I d d : 60ma + l^ma/MHz □ High speed Universal RADPAL - tpo? 25ns maximum CMOS 30ns maximum (TEL)
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UT22VP10
30MHz
MIU-3S333
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