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    RZ12 Price and Stock

    Panduit Corp FOCRZ12Y

    CBL FBR OPTIC 125UM MULTIMODE
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    DigiKey FOCRZ12Y 1,640 1
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    Avnet Americas FOCRZ12Y Bulk 8 Weeks 150
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    Mouser Electronics FOCRZ12Y
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    Sager FOCRZ12Y 1
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    Panduit Corp FODRZ12Y

    CBL FBR OPTIC 125UM MULTIMODE
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    DigiKey FODRZ12Y 1,236 1
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    Avnet Americas FODRZ12Y Bulk 8 Weeks 150
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    Mouser Electronics FODRZ12Y
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    Newark FODRZ12Y Foot 150
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    Sager FODRZ12Y 1
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    TestEquity LLC FODRZ12Y
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    Toshiba America Electronic Components CRZ12(TE85L,Q,M)

    DIODE ZENER 12V 700MW SFLAT
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    DigiKey CRZ12(TE85L,Q,M) Digi-Reel 640 1
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    CRZ12(TE85L,Q,M) Cut Tape 640 1
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    Avnet Americas CRZ12(TE85L,Q,M) Reel 16 Weeks 3,000
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    Chip1Stop CRZ12(TE85L,Q,M) Cut Tape 3,164
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    RECOM Power Inc RZ-1205S

    DC DC CONVERTER 5V 500MW
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    Panduit Corp FLDRZ12Y

    12 FIBER CABLE, OM4, INDOOR, RIS
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    Find more RZ12 price and stock on Findchips.com

    RZ12 Datasheets (52)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RZ12 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    RZ1200 Allegro MicroSystems Zener Diode, Single, Axial Lead, 2-Pin Original PDF
    RZ1200 Sanken Electric Avalanche Diodes with built-in Thyristor Original PDF
    RZ1200 Sanken Electric Avalanche Diodes with built-in Thyristor Original PDF
    RZ1200 Sanken Electric Silicon Diodes / Silicon Varistors Original PDF
    RZ1200 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    RZ-1205S RECOM RZ Series - Econoline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 05V; Power: 0.5W; 1kVDC Isolation; SMD Package Styles; Single Regulated Output(Internal Linear Regulator); UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Efficiency to 62% Original PDF
    RZ-1205S RECOM ECONOLINE - DC/DC - Converter Original PDF
    RZ-1205S/P RECOM RZ Series - Econoline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 05V; Power: 0.5W; 1kVDC Isolation; SMD Package Styles; Single Regulated Output(Internal Linear Regulator); UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Efficiency to 62% Original PDF
    RZ-1205S/P-R RECOM RZ Series - Econoline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 05V; Power: 0.5W; 1kVDC Isolation; SMD Package Styles; Single Regulated Output(Internal Linear Regulator); UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Efficiency to 62% Original PDF
    RZ-1205S-R RECOM RZ Series - Econoline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 05V; Power: 0.5W; 1kVDC Isolation; SMD Package Styles; Single Regulated Output(Internal Linear Regulator); UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Efficiency to 62% Original PDF
    RZ-1212S RECOM ECONOLINE - DC/DC - Converter Original PDF
    RZ-1212S RECOM RZ Series - Econoline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; Power: 0.5W; 1kVDC Isolation; SMD Package Styles; Single Regulated Output(Internal Linear Regulator); UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Efficiency to 62% Original PDF
    RZ-1212S/P RECOM RZ Series - Econoline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; Power: 0.5W; 1kVDC Isolation; SMD Package Styles; Single Regulated Output(Internal Linear Regulator); UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Efficiency to 62% Original PDF
    RZ-1212S/P-R RECOM RZ Series - Econoline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; Power: 0.5W; 1kVDC Isolation; SMD Package Styles; Single Regulated Output(Internal Linear Regulator); UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Efficiency to 62% Original PDF
    RZ-1212S-R RECOM RZ Series - Econoline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; Power: 0.5W; 1kVDC Isolation; SMD Package Styles; Single Regulated Output(Internal Linear Regulator); UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Efficiency to 62% Original PDF
    RZ1214835Y Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RZ1214B125Y Philips Semiconductors Pulsed Microwave Power Transistor Original PDF
    RZ1214B150Y Philips Semiconductors Pulsed Microwave Power Transistor Original PDF
    RZ1214B35Y Advanced Semiconductor Transistor Original PDF

    RZ12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 10-RZ126PA035SC-M620F41 10-R0126PA035SC-M620F40 flow 90PACK 0 1200V/35A Features flow 90PACK 0 ● 90° PCB mounting for easy heat sink assembly ● Clip-in PCB mounting optional ● Open emitter for easy current sensing with clips without clips Target Applications


    Original     		PDF 10-RZ126PA035SC-M620F41 10-R0126PA035SC-M620F40 90PACK 200V/35A

    BP317

    Abstract: RZ1214B65Y L-Band
    Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A


    Original     		PDF M3D034 RZ1214B65Y OT443A 125002/03/pp8 BP317 RZ1214B65Y L-Band

    Untitled

    Abstract: No abstract text available
    Text: 10-RZ126PA035SC-M620F41 10-R0126PA035SC-M620F40 Output Inverter Application flow 90PACK 0 1200V/35A General conditions 3phase SPWM VGEon = 15 V VGEoff = -15 V Rgon = 16 Ω Rgoff = 16 Ω IGBT Figure 1 FWD Figure 2 Typical average static loss as a function of output current


    Original     		PDF 10-RZ126PA035SC-M620F41 10-R0126PA035SC-M620F40 90PACK 200V/35A 16kHz

    Untitled

    Abstract: No abstract text available
    Text: 10-R0126PA015SC-M628F40 10-RZ126PA015SC-M628F41 1200V/15A flow90PACK 0 Features flow 90PACK 0 ● 90° PCB mounting for easy heat sink assembly ● Clip-in PCB mounting optional ● Open emitter for easy current sensing without clips Target Applications


    Original     		PDF 10-R0126PA015SC-M628F40 10-RZ126PA015SC-M628F41 200V/15A flow90PACK 90PACK 23use

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency


    Original     		PDF RZ1214B65Y SCA53 127147/00/02/pp8

    BP317

    Abstract: RZ1214B35Y
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency


    Original     		PDF RZ1214B35Y OT443A SCA53 127147/00/02/pp8 BP317 RZ1214B35Y

    EZ0150

    Abstract: RZ1030 RZ1040 RZ1055 RZ1065 RZ1100 RZ1125 RZ1150 RZ1175 RZ1200
    Text: Avalanche Diodes with built-in Thyristor Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter VRDC (V) (–10ºC) Type No. RZ1030 RZ1040 RZ1055 RZ1065 RZ1100 RZ1125 RZ1150 RZ1175 RZ1200 EZ0150 Tstg (°C) VZ (V) IR (H) (µA) VR = VRM Ta =100°C max


    Original     		PDF RZ1030 RZ1040 RZ1055 RZ1065 RZ1100 RZ1125 RZ1150 RZ1175 RZ1200 EZ0150 EZ0150 RZ1030 RZ1040 RZ1055 RZ1065 RZ1100 RZ1125 RZ1150 RZ1175 RZ1200

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A


    Original     		PDF M3D034 RZ1214B65Y OT443

    RZ1214B65Y

    Abstract: "RF Power Transistor" RF NPN POWER TRANSISTOR 2.5 GHZ
    Text: RZ1214B65Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI RZ1214B65Y is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.0 dB at 80 W/1400 MHz • Omnigold Metalization System


    Original     		PDF RZ1214B65Y RZ1214B65Y "RF Power Transistor" RF NPN POWER TRANSISTOR 2.5 GHZ

    Untitled

    Abstract: No abstract text available
    Text: 10-RZ126PA025SC-M629F41 10-R0126PA025SC-M629F40 Output Inverter Application flow 90PACK 0 1200V/25A General conditions 3phase SPWM VGEon = 15 V VGEoff = -15 V Rgon = 16 Ω Rgoff = 16 Ω IGBT Figure 1 FWD Figure 2 Typical average static loss as a function of output current


    Original     		PDF 10-RZ126PA025SC-M629F41 10-R0126PA025SC-M629F40 90PACK 200V/25A 16kHz

    RZ1125

    Abstract: RZ1150 RZ1200 RZ1225 S11B S12B S3V60Z sr10h-8
    Text: - ü & RZllOO RZl125 RZ1150 RZ1175 RZl200 RZ122S S3V602 S11B S1ÎC SUD S12B S12C S12D S15B S15C S15D S16B S16C S16D SD-60P SD-61P S IE 03-30 SJG03-30 SM-1A-01Z SM-1A-02Z SM-1A-04Z SM-1XZ02 SM-1XZ04 SR10H-1 SR10H-2 SR10H-4 SR10H-6 SR10H-8 SR10J-1 SR10J-2 SR10J-4


    OCR Scan     		PDF RZl100 RZ1125 RZ1150 8Z1175 RZ1200 RZ1225 S3V60Z SR10J-6 RZ1225 S11B S12B S3V60Z sr10h-8

    RZ1125

    Abstract: RZ1150 RZ1200 RZ1225 S11B S12B S3V60Z sr10h-8 MMMR
    Text: - ü & RZllOO RZl125 RZ1150 RZ1175 RZl200 RZ122S S3V602 S11B S1ÎC SUD S12B S12C S12D S15B S15C S15D S16B S16C S16D SD-60P SD-61P S IE 03-30 SJG03-30 SM-1A-01Z SM-1A-02Z SM-1A-04Z SM-1XZ02 SM-1XZ04 SR10H-1 SR10H-2 SR10H-4 SR10H-6 SR10H-8 SR10J-1 SR10J-2 SR10J-4


    OCR Scan     		PDF RZl100 RZ1125 RZ1150 8Z1175 RZ1200 RZ1225 S3V60Z 10MAX -25MIN- 23MAX- RZ1225 S11B S12B S3V60Z sr10h-8 MMMR

    ae .01z

    Abstract: SM-1XZ04 RZ1125 RZ1150 RZ1200 RZ1225 S11B S12B S3V60Z 8Z1175
    Text: - ü & RZllOO RZl125 RZ1150 RZ1175 RZl200 RZ122S S3V602 S11B S1ÎC SUD S12B S12C S12D S15B S15C S15D S16B S16C S16D SD-60P SD-61P SIE03-30 SJG03-30 SM-1A-01Z SM-1A-02Z SM-1A-04Z SM-1XZ02 SM-1XZ04 SR10H-1 SR10H-2 SR10H-4 SR10H-6 SR10H-8 SR10J-1 SR10J-2 % n


    OCR Scan     		PDF RZl100 RZ1125 RZ1150 8Z1175 RZ1200 RZ1225 S3V60Z 25MIN 26MIN ae .01z SM-1XZ04 RZ1225 S11B S12B S3V60Z 8Z1175

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHI L I P S / D I S CR E T E □ bE D bb53T31 DD1SE17 1 RZ1214B65Y T - 3 3 - 5 ~ PULSED M IC R O W A VE POWER TRANSISTOR N:P-N silicon microwave power transistor for use in a common-base, class-B wideband amplifier and operating under pulsed conditions in L-band radar applications.


    OCR Scan     		PDF bb53T31 DD1SE17 RZ1214B65Y T-33-IS 7Z94222

    MX0912B250Y

    Abstract: RV2833B5X RV3135B5X RX1214B150W RX1214B300Y RZ1214B125Y RZ1214B35Y RZ1214B65Y RZ2731B16W MRB11175Y
    Text: N AMER P H I L I P S / D I S C R E T E 5SE 3> • bbSH^! OOltiSBl 0 ■ T'-J3 3 “' ^ / Power Devices 53 MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE f GHz Vcc (Vi ' U m @ DUTY CYCLE I (%> . Pi. (W> A - ; VC (%) RADAR PULSED L-BAND RZ1214B35Y FO-57C 1.2 - 1.4


    OCR Scan     		PDF RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W FO-91 RX1214B300Y MX0912B250Y RV2833B5X RV3135B5X RZ2731B16W MRB11175Y

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor


    OCR Scan     		PDF RZ1214B35Y 127147/00/02/pp8

    RZ1125

    Abstract: RZ1150 RZ1200 RZ1225 S11B S12B S3V60Z sr10h-8
    Text: - ü & RZllOO RZl125 RZ1150 RZ1175 RZl200 RZ122S S3V602 S11B S1ÎC SUD S12B S12C S12D S15B S15C S15D S16B S16C S16D SD-60P SD-61P S IE 03-30 SJG03-30 SM-1A-01Z SM-1A-02Z SM-1A-04Z SM-1XZ02 SM-1XZ04 SR10H-1 SR10H-2 SR10H-4 SR10H-6 SR10H-8 SR10J-1 SR10J-2 SR10J-4


    OCR Scan     		PDF RZl100 RZ1125 RZ1150 8Z1175 RZ1200 RZ1225 S3V60Z SR10J-6 RZ1225 S11B S12B S3V60Z sr10h-8

    RZ1125

    Abstract: RZ1150 RZ1200 RZ1225 S11B S12B S3V60Z sr10h-8 hs 527 sla 1003
    Text: - ü & RZllOO RZl125 RZ1150 RZ1175 RZl200 RZ122S S3V602 S11B S1ÎC SUD S12B S12C S12D S15B S15C S15D S16B S16C S16D SD-60P SD-61P S IE 03-30 SJG03-30 SM-1A-01Z SM-1A-02Z SM-1A-04Z SM-1XZ02 SM-1XZ04 SR10H-1 SR10H-2 SR10H-4 SR10H-6 SR10H-8 SR10J-1 SR10J-2 SR10J-4


    OCR Scan     		PDF RZl100 RZ1125 RZ1150 8Z1175 RZ1200 RZ1225 S3V60Z RZ1225 S11B S12B S3V60Z sr10h-8 hs 527 sla 1003

    HS2300

    Abstract: RZ1125 RZ1150 RZ1200 RZ1225 S11B S12B S3V60Z sr10h-8 SR10H
    Text: - ü & RZllOO RZl125 RZ1150 RZ1175 RZl200 RZ122S S3V602 S11B S1ÎC SUD S12B S12C S12D S15B S15C S15D S16B S16C S16D SD-60P SD-61P S IE 03-30 SJG03-30 SM-1A-01Z SM-1A-02Z SM-1A-04Z SM-1XZ02 SM-1XZ04 SR10H-1 SR10H-2 SR10H-4 SR10H-6 SR10H-8 SR10J-1 SR10J-2 SR10J-4


    OCR Scan     		PDF RZl100 RZ1125 RZ1150 8Z1175 RZ1200 RZ1225 S3V60Z SR10J-6 HS2300 RZ1225 S11B S12B S3V60Z sr10h-8 SR10H

    sr10h-8

    Abstract: RZ1125 RZ1150 RZ1200 RZ1225 S11B S12B S3V60Z
    Text: - ü & RZllOO RZl125 RZ1150 RZ1175 RZl200 RZ122S S3V602 S11B S1ÎC SUD S12B S12C S12D S15B S15C S15D S16B S16C S16D SD-60P SD-61P S IE 03-30 SJG03-30 SM-1A-01Z SM-1A-02Z SM-1A-04Z SM-1XZ02 SM-1XZ04 SR10H-1 SR10H-2 SR10H-4 SR10H-6 SR10H-8 SR10J-1 SR10J-2 SR10J-4


    OCR Scan     		PDF RZl100 RZ1125 RZ1150 8Z1175 RZ1200 RZ1225 S3V60Z 12MAX 27MAX 27MAX sr10h-8 RZ1225 S11B S12B S3V60Z

    RZ1214B125Y

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D WË bbSBTBl 001SES3 7 • RZ1214B125Y Â T- - 2 3 - ¡S' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.


    OCR Scan     		PDF 001SES3 RZ1214B125Y r-33-ir RZ1214B125Y

    sr10h-8

    Abstract: SM-1XZ04 RZ1125 RZ1150 RZ1200 RZ1225 S11B S12B S3V60Z
    Text: - ü & RZllOO RZl125 RZ1150 RZ1175 RZl200 RZ122S S3V602 S11B S1ÎC SUD S12B S12C S12D S15B S15C S15D S16B S16C S16D SD-60P SD-61P S IE 03-30 SJG03-30 SM-1A-01Z SM-1A-02Z SM-1A-04Z SM-1XZ02 SM-1XZ04 SR10H-1 SR10H-2 SR10H-4 SR10H-6 SR10H-8 SR10J-1 SR10J-2 SR10J-4


    OCR Scan     		PDF RZl100 RZ1125 RZ1150 8Z1175 RZ1200 RZ1225 S3V60Z SR10J-6 sr10h-8 SM-1XZ04 RZ1225 S11B S12B S3V60Z

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S CR E T E DhE D m bt,53T31 □015323 7 • RZ1214B125Y r -3 3 - P U L S E D M IC R O W A V E P O W E R T R A N S IS T O R N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.


    OCR Scan     		PDF 53T31 RZ1214B125Y 14B125

    RZ1214B65Y

    Abstract: SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR


    OCR Scan     		PDF RZ1214B65Y OT443A. RZ1214B65Y SC15