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    RALEC RTT12000JTP

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    Quest Components RTT12000JTP 4,000
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    RTT120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k4b2g1646q

    Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
    Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646Q 96FBGA k4b2g1646q ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA

    IS46TR

    Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
    Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        


    Original     		PDF IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 cycles/64 cycles/32 60A/AL 78-ball IS46TR IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"

    Untitled

    Abstract: No abstract text available
    Text: W632GU6KB 16M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W632GU6KB

    Untitled

    Abstract: No abstract text available
    Text: W631GU6KB 8M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W631GU6KB

    NT5CB64M16AP-CF

    Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball NT5CB64M16AP-CF nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC

    W631GG6KB-12

    Abstract: W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I
    Text: W631GG6KB 8M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W631GG6KB W631GG6KB-12 W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I

    W631GU8KB15K

    Abstract: No abstract text available
    Text: W631GU8KB 16M  8 BANKS  8 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W631GU8KB W631GU8KB15K

    W632GG6KB

    Abstract: W632GG6KB15I
    Text: W632GG6KB 16M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W632GG6KB W632GG6KB15I

    Untitled

    Abstract: No abstract text available
    Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility


    Original     		PDF 512M8CN 256M16CP DDR3L-1866

    W3J512M32G

    Abstract: M41K256M32
    Text: W3J512M32G-XBX W3J512M32G T -XB2X W3J512M36/40G(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.5V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  74% Space savings vs. FBGA  Packages:


    Original     		PDF W3J512M32G-XBX W3J512M32G W3J512M36/40G x36/40 M41K256M32

    Untitled

    Abstract: No abstract text available
    Text: W3J512M64K-XPBX W3J512M64K-XLBX *ADVANCED 4GB – 512M x 64 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1,066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M64K-XPBX W3J512M64K-XLBX

    M41K256M32

    Abstract: No abstract text available
    Text: W3J512M32K-XBX W3J512M36K T -XB2X W3J512M36/40K(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.35V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  74% Space savings vs. FBGA  Packages:


    Original     		PDF W3J512M32K-XBX W3J512M36K W3J512M36/40K M41K256M32

    Untitled

    Abstract: No abstract text available
    Text: W3J512M64G-XPBX W3J512M64G-XLBX 4GB – 512M x 64 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M64G-XPBX W3J512M64G-XLBX

    Untitled

    Abstract: No abstract text available
    Text: W3J512M64G-XPBX W3J512M64G-XLBX 4GB – 512M x 64 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M64G-XPBX W3J512M64G-XLBX

    Untitled

    Abstract: No abstract text available
    Text: W3J128M72K-XLBX W3J128M72K-XPBX *ADVANCED 1GB – 128M x 72 DDR3 SDRAM – 1.35V – 375 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800; 1,066; 1,333; 1,600* Mb/s  35%* Space savings vs. FBGA  Packages:  Reduced part count


    Original     		PDF W3J128M72K-XLBX W3J128M72K-XPBX 1600Mb/s

    IDSH51

    Abstract: No abstract text available
    Text: April 2008 IDSH51–02A1F1C IDSH51–03A1F1C IDSH51–04A1F1C 512-Mbit Double-Data-Rate-Three SDRAM DDR3 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.92 Advance Internet Data Sheet IDSH51–0[2/3/4]A1F1C 512-Mbit Double-Data-Rate-Three SDRAM


    Original     		PDF IDSH51 02A1F1C 03A1F1C 04A1F1C 512-Mbit mpth0535

    NT5CB256

    Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
    Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800


    Original     		PDF NT5CB512M8CN NT5CB256M16CP NT5CC512M8CN NT5CC256M16CP DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 NT5CB256 NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8

    L9D3256M32SBG1

    Abstract: No abstract text available
    Text: L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES       Configuration: x/'06%*0HJ[[ 8 banks x/'06%*0HJ[[ 8 banks DDR3 Integrated Module [iMOD]: VDD=VDD4 999


    Original     		PDF L9D3256M32SBG1 L9D3512M32SBG1 256-512M DDR3-1333 LDS-L9D3xxxM32SBG1 L9D3256M32SBG2I107 L9D3256M32SBG1

    TA 7698 AP

    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES " " " " " " Configuration: "‚"N;F5478O54UDI3<"54Ogi"z"54"z" 8 banks ‚"N;F5734O54UDI3<"86Ogi"z"54"z" 8 banks DDR3 Integrated Module [iMOD]:


    Original     		PDF L9D3256M32SBG1 L9D3512M32SBG1 256-512M F5478O54UDI3< 54Ogi F5734O54UDI3< 86Ogi 3057X /202897X1-203X TA 7698 AP

    K4B4G0846C

    Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
    Text: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B4G0446C K4B4G0846C 78FBGA K4B4G0846C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866

    MICRON ddr3

    Abstract: A-225 DDR3 1gb dimm
    Text: 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 Banks MT41J256M8 – 32 Meg x 8 x 8 Banks MT41J128M16 – 16 Meg x 16 x 8 Banks Options1 Features • • • • • • • • • • • • • • • • • • Marking


    Original     		PDF MT41J512M4 MT41J256M8 MT41J128M16 09005aef826aaadc MICRON ddr3 A-225 DDR3 1gb dimm

    K4B4G0846B-HYK0

    Abstract: K4B4G0846B-HYH9 K4B4G0446B-HYK0 K4B4G0446B-HYH9 09 06 115 2932
    Text: Rev. 1.2, Dec. 2011 K4B4G0446B K4B4G0846B 4Gb B-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B4G0446B K4B4G0846B 78FBGA K4B4G0846B-HYK0 K4B4G0846B-HYH9 K4B4G0446B-HYK0 K4B4G0446B-HYH9 09 06 115 2932

    K4B4G0846a

    Abstract: No abstract text available
    Text: Rev. 1.11, Jan. 2011 K4B4G0446A K4B4G0846A 4Gb A-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B4G0446A K4B4G0846A 78FBGA K4B4G0846a

    k4b2g0446d-hyh9

    Abstract: No abstract text available
    Text: Rev. 1.01, Nov. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G0446D K4B2G0846D 78FBGA k4b2g0446d-hyh9