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Text: SKKT 323/12 E Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 320 Tc = 100 °C 241 A Tj = 25 °C 9500 A Tj = 130 °C 8200 A Tj = 25 °C 451250 A²s Tj = 130 °C 336200 A²s VRSM 1300 V VRRM 1200 V IT AV ITSM i2t SEMIPACK 3 Thyristor Modules
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Abstract: No abstract text available
Text: SKKH 323/12 E Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 320 Tc = 100 °C 241 A Tj = 25 °C 9500 A Tj = 130 °C 8200 A Tj = 25 °C 451250 A²s Tj = 130 °C 336200 A²s VRSM 1300 V VRRM 1200 V IT AV ITSM i2t SEMIPACK 3 Thyristor / Diode Modules
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Abstract: No abstract text available
Text: SKKH 323/16 E Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 320 Tc = 100 °C 241 A Tj = 25 °C 9500 A Tj = 130 °C 8200 A Tj = 25 °C 451250 A²s Tj = 130 °C 336200 A²s VRSM 1700 V VRRM 1600 V IT AV ITSM i2t SEMIPACK 3 Thyristor / Diode Modules
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Abstract: No abstract text available
Text: SKKT 323/16 E Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 320 A Tc = 100 °C 241 A Tj = 25 °C 9500 A Tj = 130 °C 8200 A Tj = 25 °C 451250 A²s Tj = 130 °C 336200 A²s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t SEMIPACK 3 Thyristor Modules
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SKKT 323/16E
Abstract: No abstract text available
Text: SKKT 323/16 E Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 320 Tc = 100 °C 241 A Tj = 25 °C 9500 A Tj = 130 °C 8200 A Tj = 25 °C 451250 A²s Tj = 130 °C 336200 A²s VRSM 1700 V VRRM 1600 V IT AV ITSM i2t SEMIPACK 3 Thyristor Modules
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Untitled
Abstract: No abstract text available
Text: SKKH 323/12 E Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 320 A Tc = 100 °C 241 A Tj = 25 °C 9500 A Tj = 130 °C 8200 A Tj = 25 °C 451250 A²s Tj = 130 °C 336200 A²s VRSM 1300 V VRRM 1200 V Chip IT AV ITSM i2t SEMIPACK 3 Thyristor / Diode Modules
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Untitled
Abstract: No abstract text available
Text: SKKT 323/12 E Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 320 A Tc = 100 °C 241 A Tj = 25 °C 9500 A Tj = 130 °C 8200 A Tj = 25 °C 451250 A²s Tj = 130 °C 336200 A²s VRSM 1300 V VRRM 1200 V Chip IT AV ITSM i2t SEMIPACK 3 Thyristor Modules
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Abstract: No abstract text available
Text: SKKH 323/16 E Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 320 A Tc = 100 °C 241 A Tj = 25 °C 9500 A Tj = 130 °C 8200 A Tj = 25 °C 451250 A²s Tj = 130 °C 336200 A²s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t SEMIPACK 3 Thyristor / Diode Modules
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VVY 40-16IO1
Abstract: B2HKF ixys vhf 28-08io5 vgo 36-08io7 vvy40 ixys vuo 52 input id VKO 15-08io5 VUM 33-05 F1-10 F1-20
Text: 1~ Rectifier Bridges & PFC Modules Contents 1 2 1 3 5 18 21 21 30 31 35 38 40 45 50 52 54 55 65 68 72 107 124 122 174 2000 1600 20 ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● 1400 06 08 12 14 16 18 ● ● ● ● ● ●
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u2225b
Abstract: MCT12E U6204 U6202B U2829 U327M MC50K g1140 U2528B U427B
Text: Quality and Reliability Report 1998 TEMIC Semiconductors 06.98 Table of Contents TEMIC QUALITY POLICY .1 QUALITY SYSTEM .2
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Text: Features • • • • • • • • • • • • • First-in first-out dual port memory 4096 y 9 organisation Fast Flag and access times: 15, 30 ns Wide temperature range: - 55°C to + 125°C Fully expandable by word width or depth Asynchronous read/write operations
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M67204F
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Abstract: No abstract text available
Text: 3.3 VOLT CMOS SuperSync FIFO 32,768 X 18 65,536 X 18 FEATURES: • • • • • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V275 32,768 x 18 IDT72V285 65,536 x 18 Pin-compatible with the IDT72V255/72V265 SuperSync FIFOs
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IDT72V275
IDT72V285
IDT72V255/72V265
-40OC
72V275
72V285
PN64-1)
PP64-1)
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72V275
Abstract: IDT72V275 IDT72V285 72V275L15 72V285L10 72V285L15
Text: PRELIMINARY IDT72V275 IDT72V285 3.3 VOLT CMOS SUPERSYNC FIFO 32,768 X 18 65,536 X 18 FEATURES: • Available in the 64-pin Thin Quad Flat Pack TQFP and the 64-pin Slim Thin Quad Flat Pack (STQFP) • High-performance submicron CMOS technology • Choose among the following memory organizations:
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IDT72V275
IDT72V285
64-pin
64-pin
IDT72V255/72V265
PN64-1)
PP64-1)
72V275
72V275
IDT72V275
IDT72V285
72V275L15
72V285L10
72V285L15
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DMILL
Abstract: 4634 81F64842B
Text: takes advantages of high-volume production latch-up immune above 100 Krads TEMIC Semiconductors provides a full range of components for the demanding environments of the space, defense and avionics industries. As a long-term qualified supplier to commercial, military and space HiRel programs, we offer the
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processe10
DMILL
4634
81F64842B
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5962-8956806QYC
Abstract: M67204F MMCP-67204FV-15 MMCP-67204FV-15-E MMCP-67204FV-30 SMCP-67204FV-15SB SMCP-67204FV-30SB
Text: Features • • • • • • • • • • • • • First-in first-out dual port memory 4096 y 9 organisation Fast Flag and access times: 15, 30 ns Wide temperature range: - 55°C to + 125°C Fully expandable by word width or depth Asynchronous read/write operations
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M67204F
5962-8956806QYC
MMCP-67204FV-15
MMCP-67204FV-15-E
MMCP-67204FV-30
SMCP-67204FV-15SB
SMCP-67204FV-30SB
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Untitled
Abstract: No abstract text available
Text: 3.3 VOLT CMOS SuperSync FIFO 32,768 x 18 65,536 x 18 FEATURES: • • • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V275 32,768 x 18 IDT72V285 65,536 x 18 Pin-compatible with the IDT72V255/72V265 SuperSync FIFOs
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IDT72V275
IDT72V285
IDT72V255/72V265
72V275
72V285
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72V275
Abstract: IDT72V275 IDT72V285
Text: 3.3 VOLT CMOS SuperSync FIFO 32,768 x 18 65,536 x 18 FEATURES: • • • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V275 32,768 x 18 IDT72V285 65,536 x 18 Pin-compatible with the IDT72V255/72V265 SuperSync FIFOs
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IDT72V275
IDT72V285
IDT72V255/72V265
-40OC
72V275
72V285
PN64-1)
PP64-1)
72V275
IDT72V275
IDT72V285
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2056-0000
Abstract: 2082-5810-02 2098-3252-01 995022 2098-3251-94
Text: Index of P a rt Numbers Part Number Assembly Proced. Page 1001-5004-02 10-002 . 75 1001-5045-92 10-052 1 1001-6113-00 359 1001-6115-00 359 1001-7985-00 10-001 . 89 10017985-02 10-001 . 75
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9950-4100-XX
9950-4200-XX
4305-XX
9952-4100-XX
9952-4200-XX
9952-4305-XX
2056-0000
2082-5810-02
2098-3252-01
995022
2098-3251-94
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2098-3251-94
Abstract: No abstract text available
Text: Index of P a rt Numbers Part Number Assembly Proced. Page Part Number 1001-5004-02 10-002 . 75 1001-5045-92 10-052 1 1001-6113-00 359 1001-6115-00 359 1001-7985-00 10-001 . 89 1001- 7985-02
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9950-4100-XX
9950-4200-XX
9950-4305-XX
00-XX
4200-XX
9952-4305-XX
2098-3251-94
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40-12N06
Abstract: VBO 40-08N06 160-12N07 30-14N07 160-16N07 25-16A02 VBO 24 52-08N07 VBO 22-08n08 VBO 20-16N02
Text: 1~ Rectifier Bridges h ik â \ L -W — i - W - J ! 1~ Rectifier Bridges with Avalanche Diodes, B2U v RRM Type ► New VBO 13-12A02 VBO 13-16A02 VBO VBO VBO VBO 20-12A02 20-16A02 25-12A02 25-16A02 v 1dAV @ T1C vRMS • ^FSM 45°C 10 ms A VT0 rT "^VJM p p thJH
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13-12A02
13-16A02
20-12A02
20-16A02
25-12A02
25-16A02
13-08N02
13-12N02
13-16N02
16-12N
40-12N06
VBO 40-08N06
160-12N07
30-14N07
160-16N07
25-16A02
VBO 24
52-08N07
VBO 22-08n08
VBO 20-16N02
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B2HKF
Abstract: B2U 250 105-14N 40-08N B2HKF 250 160-14N 22-16 diode 15-16io5 13-12A02 S 4012 R
Text: ¡bihi; 1~ Rectifier Bridges ! L -w — L -H - 1 ! 1~ Rectifier Bridges with Avalanche Diodes, B2U 1 v vRMS IdAV ^@ T C *FSM V T0 rT ^ th J C 45° C 10 ms A V mQ ‘C 2.5 40 3.0 0.75 3.4 0.85 3.4 2.8 0.7 3.2 0.8 3.4 VBO 13-12A 02 VBO 13-16A 02 1200 1600 400
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OT-227B
3-12A
3-16A
5-12A
5-16A
55-0B
55-12io7
55-14io7
55-16i07
55-16io7
B2HKF
B2U 250
105-14N
40-08N
B2HKF 250
160-14N
22-16 diode
15-16io5
13-12A02
S 4012 R
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VB013
Abstract: 20-16N 25-12N02 30-12N07 20-16A02 25-16A02 036-08N 6512N 13-12A02 72-08N07
Text: O 1~ Rectifier Bridges Type >• New V FIRM v vRMS 1dAV @ p TC *FSM °C 45°C 10 ms A V m ö °C V T0 rT P thJC p o 2 r i ii. 6.0 1.5 2.5 40 3.0 0.75 3.4 0.85 3.4 2.8 0.7 3.2 0.8 3.4 V VBO 13-12A02 VBO13-16A02 1200 1600 400 500 18 85 220 0.85 17 150 5.6 1.4
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13-12A02
VBO13-16A02
20-12A02
20-16A02
25-12A02
25-16A02
013-08N
013-12N
VB013-16N
52-08N07
VB013
20-16N
25-12N02
30-12N07
25-16A02
036-08N
6512N
72-08N07
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VEB mikroelektronik
Abstract: mikroelektronik DDR Widerstandsnetzwerke aus dem Kombinat Keramische Werke Hermsdorf VEB Keramische Werke keramische Werke Hermsdorf hermsdorf keramische Werke Hermsdorf 3677 Deutschen Demokratischen Republik Kombinat VEB Keramische Werke DDR Schaltkreise
Text: Widerstandsnetzwerke ProduktUbersicht Resistor Networks Products catalog Die vorgestellte Typenauswahl stellt einen Querschnitt unseres umfangreichen Sorti ments dar. Die verbindlichen Angaben zu den aufgeführten und weiteren Typen kön nen unseren „Technischen Lieferbedingun
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WV/6/1-10
VEB mikroelektronik
mikroelektronik DDR
Widerstandsnetzwerke aus dem Kombinat Keramische Werke Hermsdorf
VEB Keramische Werke
keramische Werke Hermsdorf
hermsdorf
keramische Werke Hermsdorf 3677
Deutschen Demokratischen Republik
Kombinat VEB Keramische Werke
DDR Schaltkreise
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9110-M
Abstract: 9999 6110-13EA
Text: EA 6110 12/96 EVENT/TIME/FREQUENCY/SPEED/ PULSE WIDTH-METER WITH PROGRAMMABLE TIME BASE FEATURES * HIGH CONTRAST 4 DIGIT LCD * 13, 18, 25, 50mm DIGIT HEIGHT AVAILABLE * SUPPLY 5V ±10%/250 xA, VERSION -E 25^A * ACCURACY ±5ppm (5ppm/V , TK = -0,04ppm/°C2
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25piA
04ppm/Â
20MHz
1000s
16miWWWIWIRmiWl1
050-N
EA08-N
EA011-N
EA050-N
D-82166
9110-M
9999
6110-13EA
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