48v, 20 amp battery charger circuit diagram
Abstract: ic ana 650 ana 650 chang capacitor M62258FP 1.6V charger BATTERY CHARGE I.C
Text: A R Ytion. MITSUBUSHI <Dig./Ana. INTERFACE> e. ang a N cific ct to ch I e p s e j l I M fina sub M62258FP L is is not alimits are Th tric P RoE e c ti : rame N e pa Som GENERAL PURPOSE BATTERY CHARGER CONTROL IC New Product GENERAL DESCRIPTION PIN CONFIGURATION TOP VIEW
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M62258FP
M62258FP
M34XXX
48v, 20 amp battery charger circuit diagram
ic ana 650
ana 650
chang capacitor
1.6V charger
BATTERY CHARGE I.C
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252063
Abstract: No abstract text available
Text: Intel Wireless Flash Memory W18/W30 SCSP 128-Mbit WQ Family with Asynchronous SRAM Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each
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W18/W30
128-Mbit
--32-Kword
W18/30
PF48F3300W0YDQ0
RD38F3350WWZDQ1
64PSRAM
8x10x1
252063
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128W18
Abstract: 28f128w18t Intel SCSP 28F128W18B 28F640W18T 128W-1 128W18B micron flash otp
Text: 128-Mbit 1.8 Volt Intel Wireless Flash Memory W18 + 32-Mbit PSRAM Stacked-CSP Family Datasheet Product Features • ■ ■ ■ Flash Architecture — Flexible, Multiple-Partition, DualOperation: Read-While-Write / ReadWhile-Erase — 32 Partitions, 4 Mbits each
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128-Mbit
32-Mbit
--32-Kword
128W18
RD48F3000W0YBQ0
RD48F3000W0YTQ0
128W18
32PSRAM
RD38F3040W0YBQ0
RD38F3040W0YTQ0
28f128w18t
Intel SCSP
28F128W18B
28F640W18T
128W-1
128W18B
micron flash otp
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252063
Abstract: No abstract text available
Text: Intel Wireless Flash Memory W30 SCSP 128WQ Family Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each ■ ■ —1 Parameter Partition, 8 Parameter + 7
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128WQ
--32-Kword
128W30B
128W30T
64PSRAM
RD38F3350WWZDQ1
252063
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64W18
Abstract: FLASH MEMORY 38F W18 88 FLASH MEMORY 48F 64WQ 251407 PF38F2030W0YTQE PF38F2030W0YTQ1
Text: Intel Wireless Flash Memory W18/W30 SCSP 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 8-, 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter
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W18/W30
64-Mbit
32-Mbit
16-Mbit
RD38F2240WWYDQE
64W30
RD38F2240WWZDQ0
RD38F2240WWYDQ0
RD38F2240WWDQ1
64W18
FLASH MEMORY 38F
W18 88
FLASH MEMORY 48F
64WQ
251407
PF38F2030W0YTQE
PF38F2030W0YTQ1
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38F1020W0YBQ0
Abstract: 28F320W18 38F1020W0YTQ0 flash "high temperature data retention" mechanism
Text: Intel Wireless Flash Memory W18 SCSP 32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ0, 38F1020W0YBQ0) Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each
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32-Mbit
38F1020W0YTQ0,
38F1020W0YBQ0)
32-KWord
38F1020W0YBQ0
38F1020W0YBQ0
28F320W18
38F1020W0YTQ0
flash "high temperature data retention" mechanism
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FLASH MEMORY 38F
Abstract: Intel SCSP 88-ball
Text: Intel Wireless Flash Memory W30 SCSP 128WQ Family Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each ■ ■ —1 Parameter Partition, 8 Parameter + 7
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128WQ
--32-Kword
128W30B
128W30T
64PSRAM
RD38F3350WWZDQ1
FLASH MEMORY 38F
Intel SCSP
88-ball
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251407
Abstract: RD48F2000W
Text: Intel£ Wireless Flash Memory W18/W30 SCSP 64WQ Family Datasheet Product Features • ■ ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter
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W18/W30
64-Mbit
32-Mbit
16-Mbit
100figuration
RD48F2000W0ZBQ0
RD38F2010W0YBQ0
RD38F2020W0YBQ0
RD38F2020W0ZBQ0
RD38F2030W0YBQ0
251407
RD48F2000W
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W18 88
Abstract: FLASH MEMORY 38F Intel SCSP FLASH MEMORY 48F intel 24024
Text: Intel Wireless Flash Memory W18/W30 SCSP 128-Mbit WQ Family with Asynchronous SRAM Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each
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W18/W30
128-Mbit
--32-Kword
W18/30
128W18
128W18
128W30
128W30
64PSRAM
W18 88
FLASH MEMORY 38F
Intel SCSP
FLASH MEMORY 48F
intel 24024
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Untitled
Abstract: No abstract text available
Text: Intel£ Wireless Flash Memory W18/W30 SCSP 64WQ Family Datasheet Product Features • ■ ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter
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W18/W30
64-Mbit
32-Mbit
16-Mbit
RD38F2030W0ZTQ0
64W30
RD38F2030W0ZBQ1
RD38F2030W0ZTQ1
64W18
RD38F2040W0YBQ0
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28F320W18
Abstract: 32W18 38F1020W0YBQ0 38F1020W0YTQ0 252635
Text: 32-Mbit 1.8 Volt Intel Wireless Flash Memory W18 + 8-Mbit SRAM StackedChip Scale Package 38F1020W0YTQ0, 38F1020W0YBQ0 Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each
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32-Mbit
38F1020W0YTQ0,
38F1020W0YBQ0
32-KWord
28F320W18
32W18
38F1020W0YBQ0
38F1020W0YTQ0
252635
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PF48F4400L0
Abstract: RD38F3040L0YBQ0 rd38f405 RD48F4400L0 strataflash reliability PF48F4000L0YBQ0 5,5 KW asynchronous FLASH MEMORY 48F intel MLC flash Intel SCSP
Text: Intel StrataFlash£ Wireless Memory System LV18/LV30 SCSP 768-Mbit LVQ Family with Asynchronous Static RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Code and data segment: 128- and 256Mbit density; PSRAM: 32- and 64-Mbit density; SRAM: 8 Mbit density.
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LV18/LV30
768-Mbit
256Mbit
64-Mbit
16-KWord
128-Mbit
256-Mbit
RD48F3000L0YTQ0
NZ48F4000L0YTQ0
RD48F3000L0YBQ0
PF48F4400L0
RD38F3040L0YBQ0
rd38f405
RD48F4400L0
strataflash reliability
PF48F4000L0YBQ0
5,5 KW asynchronous
FLASH MEMORY 48F
intel MLC flash
Intel SCSP
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FLASH MEMORY 38F
Abstract: 88-ball 28F320W18 38F1020W0YBQ0 38F1020W0YTQ0
Text: Intel Wireless Flash Memory W18 SCSP 32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ0, 38F1020W0YBQ0) Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each
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32-Mbit
38F1020W0YTQ0,
38F1020W0YBQ0)
32-KWord
FLASH MEMORY 38F
88-ball
28F320W18
38F1020W0YBQ0
38F1020W0YTQ0
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Intel SCSP
Abstract: strataflash retention 252635 7900 Intel intel sram W18 Package
Text: Intel Wireless Flash Memory W18 SCSP 32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ1, 38F1020W0YBQ1) Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each
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32-Mbit
38F1020W0YTQ1,
38F1020W0YBQ1)
32-KWord
B5102-01
Intel SCSP
strataflash retention
252635
7900 Intel
intel sram
W18 Package
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Untitled
Abstract: No abstract text available
Text: FEDL2240DIGEST-04 Issue Date: Nov 24, 2009 ML2240 4-Channel Mixing Oki ADPCM Algorithm-Based Speech Synthesis LSI GENERAL DESCRIPTION The ML2240 is a 4-channel mixing speech synthesis device which connects an external ROM expanded up to 128-Mbit maximum . This ML2240 allows to select the playback method from the 8-bit PCM, non-linear 8-bit
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FEDL2240DIGEST-04
ML2240
ML2240
128-Mbit
16-bit
14-bit
ML2240.
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MSM9811
Abstract: ROE capacitor m9811 MSM9811GS-BK QFP64-P-1414-0 RA21 RA23 QFP64-P-1414
Text: FEDL9811DIGEST-02 1Semiconductor MSM9811 This version: May 2001 Previous version: Jun. 2000 4-Channel Mixing OKI ADPCM Type Voice Synthesis LSI This document contains minimum specifications. For full specifications, please contact your nearest Oki office or
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FEDL9811DIGEST-02
MSM9811
MSM9811
14-bit
ROE capacitor
m9811
MSM9811GS-BK
QFP64-P-1414-0
RA21
RA23
QFP64-P-1414
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amcc s5933
Abstract: S5933 Logic diagram for asynchronous FIFO sc3528 Asynchronous FIFO ROE d3 74F32 74F74 CY7C464 IDT72240
Text: S5933 32 Bit FIFO Example Application Note Revision 2 November 20, 1998 Introduction Asynchronous Design Example Objective This application note provides the designer with two external FIFO interface examples. Shown first is an asynchronous external 32 bit FIFO interface and considerations when
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S5933
S5933.
amcc s5933
Logic diagram for asynchronous FIFO
sc3528
Asynchronous FIFO
ROE d3
74F32
74F74
CY7C464
IDT72240
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28F640w18t
Abstract: flash "high temperature data retention" mechanism FLASH MEMORY 38F INTEL wireless FLASH MEMORY DATASHEETS 28F640W18 28F640W30 64WQ 251216 1.8V SRAM
Text: Intel£ Wireless Flash Memory W18/W30 SCSP 64WQ Family Datasheet Product Features • ■ ■ Flash Architecture — Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — Blocks: 32-Kword Main, 4-Kword Parameter — Top/Bottom Parameter - single flash die
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W18/W30
32-Kword
W18/W30
64W18
RD38F2020W0YTQ0
64W30
RD38F2020W0YBQ0
RD38F2020W0ZBQ0
RD38F2020W0ZTQ0
28F640w18t
flash "high temperature data retention" mechanism
FLASH MEMORY 38F
INTEL wireless FLASH MEMORY DATASHEETS
28F640W18
28F640W30
64WQ
251216
1.8V SRAM
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RB1002
Abstract: UM83C002 ST412HP UM83C001 127fl
Text: UNICORN MIC ROE LECTRONICS 54E D • ^76700 QGQQ37S *1 ■ UM83C002 Ü M Ö RAM Buffer Controller Features ■ ■ * ■ ■ ■ ■ ■ No lost RAM cycles for DMA break-in 3 DMA channels Host processor port Refresh circuit for dynamic RAM buiit-in RAM access priority network
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127fl7Ã
GGQD37S
UM83C002
UM83C002,
UM83C002
RB1002
ST412HP
UM83C001
127fl
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XO-31
Abstract: AAD00-AAD04 wtl3164 weitek NS32580-30 NS32081
Text: PRELIMINARY NS32580-20/NS32580-25/NS32580-30 Floating Point Controller G eneral Description The NS32580 Floating-Point Controller FPC is an interface device designed to couple the NS32532 Microprocessor with the Weitek WTL 3164 Floating-Point Data Path (FPDP).
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NS32580-20/NS32580-25/NS32580-30
NS32580-20/NS32580-25/NS32580-30
NS32580
NS32532
NS32081
XO-31
AAD00-AAD04
wtl3164
weitek
NS32580-30
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TDA1011
Abstract: SCN-8031 full bridge mosfet smps MEA8000 TDA1011 equivalent
Text: Signetics Linear Products Preliminary Speech Synthesizer DESCRIPTION The MEA8000 is a 24-pin N MOS integrated circu it for generating good quality speech from dig ita l code w ith a program m able b it rate. The circu it is prim arily intended fo r applications in m icroprocessor controlled
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MEA8000
24-pin
MEA8000
32-bit
TDA1011
SCN-8031
full bridge mosfet smps
TDA1011 equivalent
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weitek 3164
Abstract: WTL-3164-15 weitek FPU weitek AADD CA001 NS32532 t03h 32580-WTL3164 R4X20
Text: PRELIM INARY NS32580-20/NS32580-25/NS32580-30 Floating Point Controller G eneral Description The NS32580 Floating-Point Controller FPC is an interface device designed to couple the NS32532 Microprocessor with the Weitek WTL 3164 Floating-Point Data Path (FPDP).
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NS32580-20/NS32580-25/NS32580-30
NS32580
NS32532
NS32081
weitek 3164
WTL-3164-15
weitek FPU
weitek
AADD
CA001
t03h
32580-WTL3164
R4X20
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RT5014
Abstract: NS32081 BC-NB weitek S3258 e9421
Text: PRELIMINARY NS32580-20/NS32580-25/NS32580-30 Floating Point Controller General Description The NS32580 Floating-Point Controller FPC is an interface device designed to couple the NS32532 Microprocessor with the Weitek WTL 3164 Floating-Point Data Path (FPDP).
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NS32580-20/NS32580-25/NS32580-30
NS32580-20/NS32580-25/NS32580-30
NS32580
NS32532
NS32081
RT5014
BC-NB
weitek
S3258
e9421
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speech synthesizer
Abstract: No abstract text available
Text: Signetics Linear Products Preliminary Speech Synthesizer DESCRIPTION The MEA8000 is a 24-pin N MOS integrated circu it for generating good qua lity speech from dig ita l code w ith a program m able b it rate. The circu it is prim arily intended fo r a pplications In m icroprocessor controlled
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MEA8000
24-pin
MEA8000
32-bit
speech synthesizer
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