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    RJK60S1DPD-00#J2 Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation

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    PRSS0004ZG-A

    Abstract: RJK60S1DPD
    Text: Preliminary Datasheet RJK60S1DPD 600V - 8A - SJ MOS FET High Speed Power Switching R07DS0853EJ0002 Rev.0.02 Jul 20, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.84  typ. (at ID = 2.2A, VGS = 10 V, Ta = 25C) Outline RENESAS Package code: PRSS0004ZG-A


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    RJK60S1DPD R07DS0853EJ0002 PRSS0004ZG-A PRSS0004ZG-A RJK60S1DPD PDF

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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S1DPD 600V - 8A - SJ MOS FET High Speed Power Switching R07DS0853EJ0004 Rev.0.04 Nov 30, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.84  typ. (at ID = 2.2A, VGS = 10 V, Ta = 25C)  High speed switching


    Original
    RJK60S1DPD R07DS0853EJ0004 PRSS0004ZG-A PDF