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RJK5018DPK Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJK5018DPK-00#T0		Renesas Electronics Corporation	Nch Single Power Mosfet 500V 35A 155Mohm To-3P

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Renesas Electronics Corporation RJK5018DPK-00-T0 MOSFET N-CH 500V 35A TO3P
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RJK5018DPK Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJK5018DPK		Renesas Technology	MOSFET, Switching; VDSS (V): 500; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.13; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4100; toff ( us) typ: -; Package: TO-3P		Original	PDF
RJK5018DPK		Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching		Original	PDF
RJK5018DPK-00		Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching		Original	PDF
RJK5018DPK-00#T0		Renesas Technology	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 35A TO3P		Original	PDF

RJK5018DPK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RJK5018DPK-00-T0 Abstract: PRSS0004ZE-A RJK5018DPK SC-65 Text: RJK5018DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1457-0200 Rev.2.00 Dec 19, 2008 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name:TO-3P D 1. Gate	Original	PDF	RJK5018DPK REJ03G1457-0200 PRSS0004ZE-A RJK5018DPK-00-T0 PRSS0004ZE-A RJK5018DPK SC-65
PRSS0004ZE-A Abstract: RJK5018DPK RJK5018DPK-00 SC-65 Text: RJK5018DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1457-0100 Rev.1.00 May 11, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name:TO-3P D 1. Gate	Original	PDF	RJK5018DPK REJ03G1457-0100 PRSS0004ZE-A PRSS0004ZE-A RJK5018DPK RJK5018DPK-00 SC-65
PRSS0004ZE-A Abstract: RJK5018DPK RJK5018DPK-00-T0 SC-65 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	PDF	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	PDF	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	PDF	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
rjp6065 Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance	Original	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	PDF	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
rjh60f5 Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.	Original	PDF	REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
R2J24020F Abstract: R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114 Text: 2009.07 ルネサス電源システム RENESAS Power supply system www.renesas.com 電気に変換されたエネルギーは無駄なく使うことで地球全体の炭素使用量を減らし地球の温暖化を防ぐことができます。電気は主に発電所で作られ、高電圧のACで送電されること	Original	PDF	RJJ01F0008-0201 R2J24020F R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114