APD230-LCC
Abstract: No abstract text available
Text: APD230-LCC v 1.1 05.03.2014 Description APD230-LCC is a silicon semiconductor avalanche photodiode with an active area of 230 µm. It features extremely fast rise time of 250 ps, high gain at low bias voltage, and low capacitance. APD230-LCC is typically used for Laser Range Finding and LIDAR applications.
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APD230-LCC
APD230-LCC
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APD500-LCC
Abstract: No abstract text available
Text: APD500-LCC v 1.1 05.03.2014 Description APD500-LCC is a silicon semiconductor avalanche photodiode with an active area of 500 µm. It features extremely fast rise time of 0.6 ns, high gain at low bias voltage, and low capacitance. APD500-LCC is typically used for Laser Range Finding and LIDAR applications.
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APD500-LCC
APD500-LCC
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C30737LH-500-92
Abstract: CERAMIC LEADLESS CHIP CARRIER
Text: DATASHEET Photon Detection C30737PH and C30737LH Series Silicon Avalanche Photodiodes APDs for range finding and laser meters – plastic and leadless ceramic carrier packages Excelitas’ C30737 Series APDs are ideally suited to laser meter, laser range finding and area scanning applications,
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C30737PH
C30737LH
C30737
C30737PH-LH-Rev
C30737LH-500-92
CERAMIC LEADLESS CHIP CARRIER
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Phototransistor bp 101
Abstract: pin photodiode remote control bpy BPY61 rel photoelectric conversion Plastic Encapsulate Diodes phototransistor sensitive to red light silicon metal casing diode BPX62 transistor mm glass lens phototransistor
Text: Silicon Photovoltaic Cells, Silicon Photodiodes and Phototransistors Appnote 16 Optoelectronic components are increasingly used in modern electronics. The main fields of application are light barriers for production control and safety devices, light control and regulating equipment like twilight switches, fire detectors and facilities
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S1723-04
Abstract: BPW34 application VTD34 BPW34 BPW34 application note SFH206K BPW34F SFH205 VTD205 VTD205K
Text: Alternate Source/ Second Source Photodiodes VTD31AA CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of
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VTD31AA
CLD31AA
S1723-04
BPW34 application
VTD34
BPW34
BPW34 application note
SFH206K
BPW34F
SFH205
VTD205
VTD205K
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xr 2204
Abstract: Amptek XR-100CR XR-100T-CZT RTD 1055 lemo 6 pin connector lemo connector LEMO px2cr 9pin D-connector
Text: R AMP TEK All Solid State Design No Liquid Nitrogen s Landed on Mar 7 9 19 , 4 ly Ju FET Be Window Detector Temperature Monitor Cooler Mounting Stud • • • • • • Si-PIN Photodiode Thermoelectric Cooler Beryllium Window Hermetic Package TO-8 Wide Detection Range
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XR-100CR
xr 2204
Amptek
XR-100T-CZT
RTD 1055
lemo 6 pin connector
lemo connector
LEMO
px2cr
9pin D-connector
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PS0.25-5
Abstract: PIN photodiode 850 nm
Text: Pacific Silicon Sensor Series 5 Data Sheet Part Description PS0.25-5-CH Order # 41-017 ±.02 0.78 SQ 0.38 2X ANODE BOND PAD ALUMINUM 0.10 X 0.10 BACKSIDE CATHODE GOLD ALLOY DESCRIPTION APPLICATIONS • • • • 0.25 mm High Speed Epitaxy Photodiode with P on N
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25-5-CH
D-12459
PS0.25-5
PIN photodiode 850 nm
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S3901-1024Q, S3904-2048Q Large active area type with 51.2 mm detection length NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S3901-1024Q,
S3904-2048Q
S3901-1024Q
S3904-2048Q
SE-171
KMPD1049E03
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Untitled
Abstract: No abstract text available
Text: DATASHEET Photon Detection C30985E 25-Element Silicon Avalanche Photodiode Si APD Linear Array The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as
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C30985E
25-Element
C30985E
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S3901-1024Q, S3904-2048Q Large active area type with 51.2 mm detection length NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S3901-1024Q,
S3904-2048Q
S3901-1024Q
S3904-2048Q
SE-171
KMPD1049E04
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C30817E
Abstract: datasheet apd 1550
Text: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,
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C30659
12-lead
C30817EH,
C30902EH,
C30954EH,
C30956EH,
C30645EH
C30662EH,
C30950
C30817E
datasheet apd 1550
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C30955EH
Abstract: No abstract text available
Text: Long Wavelength Enhanced Silicon APD C30954EH, C30955EH and C30956EH Series Overview Features and Benefits The Excelitas C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these
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C30954EH,
C30955EH
C30956EH
C30955EH,
C30956EH
C30954EH
DTS0308
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C30955EH
Abstract: No abstract text available
Text: Overview Features and Benefits The PerkinElmer C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these photodiodes such that their long wave response i.e. > 900 nm has been
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C30954EH,
C30955EH,
C30956EH
C30954EH
C30956EH.
DTS0308
C30955EH
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hamamatsu 256 channel photodiode
Abstract: linear uv photodiode array S3903 S3902 S3902-128Q S3902-256Q S3902-512Q S3903-1024Q S3903-256Q S3903-512Q
Text: IMAGE SENSOR NMOS linear image sensor S3902/S3903 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S3902/S3903
S3902
S3903
SE-171
KMPD1043E01
hamamatsu 256 channel photodiode
linear uv photodiode array
S3902-128Q
S3902-256Q
S3902-512Q
S3903-1024Q
S3903-256Q
S3903-512Q
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S3900
Abstract: C7883 S3900-1024Q S3901-1024Q S3904-2048Q
Text: IMAGE SENSOR NMOS linear image sensor S3900/S3901-1024Q, S3904-2048Q Large active area type with 51.2 mm detection length NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S3900/S3901-1024Q,
S3904-2048Q
S3900-1024Q
S3901-1024Q
SE-171
KMPD1049E01
S3900
C7883
S3904-2048Q
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C7883
Abstract: S3901-1024Q S3904-2048Q high frequency linear cmos IMAGE SENSOR
Text: IMAGE SENSOR NMOS linear image sensor S3901-1024Q, S3904-2048Q Large active area type with 51.2 mm detection length NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S3901-1024Q,
S3904-2048Q
S3901-1024Q
S3904-2048Q
SE-171
KMPD1049E02
C7883
high frequency linear cmos IMAGE SENSOR
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S3902/S3903 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S3902/S3903
S3902
S3903
SE-171
KMPD1043E01
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C8225
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S3901/S3904
S3901
S3904
SE-171
KMPD1036E02
C8225
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S3904
Abstract: TOPR 150 photodiode transistor S3901 S3901-128Q S3901-256Q S3901-512Q S3904-1024Q S3904-256Q S3904-512Q high frequency linear cmos IMAGE SENSOR
Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S3901/S3904
S3901
S3904
SE-171
KMPD1036E01
TOPR 150 photodiode transistor
S3901-128Q
S3901-256Q
S3901-512Q
S3904-1024Q
S3904-256Q
S3904-512Q
high frequency linear cmos IMAGE SENSOR
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silicon photodiode array
Abstract: photodiode amplifier S3901 S3901-128Q S3901-256Q S3901-512Q S3904 S3904-1024Q S3904-256Q S3904-512Q
Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S3901/S3904
S3901
S3904
SE-171
KMPD1036E03
silicon photodiode array
photodiode amplifier
S3901-128Q
S3901-256Q
S3901-512Q
S3904-1024Q
S3904-256Q
S3904-512Q
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S3901/S3904
S3901
S3904
SE-171
KMPD1036E01
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S3901-1024Q, S3904-2048Q Large active area type with 51.2 mm detection length NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S3901-1024Q,
S3904-2048Q
S3901-1024Q
S3904-2048Q
SE-171
KMPD1049E05
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C7615
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S3901-1024Q, S3904-2048Q Large active area type with 51.2 mm detection length NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S3901-1024Q,
S3904-2048Q
S3901-1024Q
S3904-2048Q
SE-171
KMPD1049E02
C7615
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Untitled
Abstract: No abstract text available
Text: TO I TOX 9110 Silicon PIN Photodiode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9110 is a high-resistivity silicon PIN detector used in military and commercial light sensor applications. Designed to have high performance from 0.9 //m to 1.06 /jm . The TOX
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OCR Scan
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I0J3151
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