din 82
Abstract: DIN 82-Rge Rge 10-din 82 630 207 Souriau cross reference 8A10 AF5A
Text: souriau 8A10 Series Description Applications • Audio-miniature connectors with 10 contacts especially designed for transmission of very low current • Bayonet locking system • Solder or straight spills contacts • 5 different orientations • Sealed connector in unmated or mated
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from10
din 82
DIN 82-Rge
Rge 10-din 82
630 207
Souriau cross reference
8A10
AF5A
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din 82
Abstract: 8A10 AF3C AB4C 669-o 10AC2 AF5A af3a
Text: 8A10 Series Description Applications • Audio-miniature connectors with 10 contacts especially designed for transmission of very low current • Bayonet locking system • Solder or straight spills contacts • 5 different orientations • Sealed connector in unmated or mated
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from10
din 82
8A10
AF3C
AB4C
669-o
10AC2
AF5A
af3a
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Untitled
Abstract: No abstract text available
Text: MINI-DC-UPS/12DC/4 Uninterruptible power supply with integrated power supply unit INTERFACE Data sheet 104211_en_00 1 PHOENIX CONTACT - 01/2010 Description The MINI-DC-UPS provide an uninterruptible DC voltage both in case of AC power supply network and in the event of
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MINI-DC-UPS/12DC/4
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BUP 313 D
Abstract: No abstract text available
Text: BUP 313 Infineon IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 313 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-218 AB Q67040-A4208 Maximum Ratings
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O-218
Q67040-A4208
Dec-19-1995
BUP 313 D
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A4407
Abstract: Infineon IGBT BUP 200 Ultrasonic Transducer for flowmeter Q67040-A4407 infineon package bup 213 bup213
Text: BUP 213 Infineon IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 213 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67040-A4407 Maximum Ratings
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O-220
Q67040-A4407
Nov-30-1995
A4407
Infineon IGBT
BUP 200
Ultrasonic Transducer for flowmeter
Q67040-A4407
infineon package
bup 213
bup213
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Untitled
Abstract: No abstract text available
Text: HB52RD328DC-F L EO 256 MB Unbuffered SDRAM S.O.DIMM 32-Mword x 64-bit, 100 MHz Memory Bus, 2-Bank Module 32 pcs of 16 M × 4 components PC100 SDRAM E0111H10 (1st edition) (Previous ADE-203-1044B (Z) Feb. 28, 2001 Description Note: Pr The HB52RD328DC is a 16M × 64 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory
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HB52RD328DC-F
32-Mword
64-bit,
PC100
E0111H10
ADE-203-1044B
HB52RD328DC
64-Mbit
HM5264405FTB)
144-pin
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bup 313
Abstract: Q67040-A4208-A2
Text: BUP 313 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 313 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-218 AB Q67040-A4208-A2 Maximum Ratings
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O-218
Q67040-A4208-A2
Dec-19-1995
bup 313
Q67040-A4208-A2
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A4407
Abstract: C32TC Q67040-A4407-A2
Text: BUP 213 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 213 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67040-A4407-A2 Maximum Ratings
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O-220
Q67040-A4407-A2
Nov-30-1995
A4407
C32TC
Q67040-A4407-A2
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zig bee
Abstract: HB52RD328DC-A6F
Text: HB52RD328DC-F EO 256 MB Unbuffered SDRAM S.O.DIMM 32-Mword x 64-bit, 100 MHz Memory Bus, 2-Bank Module 32 pcs of 16 M × 4 components PC100 SDRAM L Description E0111H10 (1st edition) (Previous ADE-203-1044B (Z) Feb. 28, 2001 Note: Pr The HB52RD328DC is a 16M × 64 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory
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HB52RD328DC-F
32-Mword
64-bit,
PC100
E0111H10
ADE-203-1044B
HB52RD328DC
64-Mbit
HM5264405FTB)
144-pin
zig bee
HB52RD328DC-A6F
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bup 313
Abstract: Q67040-A4208-A2 bup313
Text: BUP 313 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 313 1200V 32A Pin 3 C E Package Ordering Code TO-218 AB Q67040-A4208-A2 Maximum Ratings
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O-218
Q67040-A4208-A2
Jul-30-1996
bup 313
Q67040-A4208-A2
bup313
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HB52R329E22-A6F
Abstract: HB52R329E22-B6F DIN 2510
Text: HB52R329E22-F EO 256 MB Registered SDRAM DIMM 32-Mword x 72-bit, 100 MHz Memory Bus, 2-Bank Module 36 pcs of 16 M × 4 Components PC100 SDRAM L Description E0112H10 (1st edition) (Previous ADE-203-1046A (Z) Feb. 28, 2001 Pr The HB 52R 329E22 belongs to 8-byte DI MM (D ual In- line Memory Module) fa mily, and has bee n deve loped
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HB52R329E22-F
32-Mword
72-bit,
PC100
E0112H10
ADE-203-1046A
329E22
64-Mbit
M5264405F
HB52R329E22-A6F
HB52R329E22-B6F
DIN 2510
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A4407
Abstract: BUP 200 Q67040-A4407-A2 Semiconductor Group igbt bup213 bup 213
Text: BUP 213 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 213 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67040-A4407-A2 Maximum Ratings
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O-220
Q67040-A4407-A2
Nov-30-1995
A4407
BUP 200
Q67040-A4407-A2
Semiconductor Group igbt
bup213
bup 213
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Untitled
Abstract: No abstract text available
Text: HB52R329E22-F L EO 256 MB Registered SDRAM DIMM 32-Mword x 72-bit, 100 MHz Memory Bus, 2-Bank Module 36 pcs of 16 M × 4 Components PC100 SDRAM E0112H10 (1st edition) (Previous ADE-203-1046A (Z) Feb. 28, 2001 Description Pr The HB 52R 329E22 belongs to 8-byte DI MM (D ual In- line Memory Module) fa mily, and has bee n deve loped
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HB52R329E22-F
32-Mword
72-bit,
PC100
E0112H10
ADE-203-1046A
329E22
64-Mbit
M5264405F
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Untitled
Abstract: No abstract text available
Text: H B 5 6 U W 4 72 E JN - 6 B /7 B 4,194,304-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8 byte DIMM HITACHI A D E -203-593 Z Rev. 0.0 M ay. 15, 1996 Description The HB56UW 472EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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304-word
72-bit
168-pin
HB56UW
472EJN
16-Mbit
16405BJ)
24C02)
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Untitled
Abstract: No abstract text available
Text: HB56UW264EJN-6B/7B 2,097,152-word x 64-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8 BYTE DIMM HITACHI ADE-203-589 Z Preliminary - Rev. 0.0 May. 10, 1996 Description The HB56UW264EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB56UW264EJN-6B/7B
152-word
64-bit
168-pin
ADE-203-589
HB56UW264EJN
16-Mbit
HM51W17805BJ)
24C02)
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ES2016
Abstract: No abstract text available
Text: HB56UW465EJN-6B/7B 4,194,304-word x 64-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8 BYTE DIMM HITACHI ADE-203-587 Z Preliminary - Rev. 0.0 May. 10, 1996 Description The HB56UW465EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB56UW465EJN-6B/7B
304-word
64-bit
168-pin
ADE-203-587
HB56UW465EJN
16-Mbit
HM51W17805BJ)
24C02)
ES2016
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Untitled
Abstract: No abstract text available
Text: HB56U264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI Preliminary Description The HB56U264EJ belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56U264EJ
152-word
64-bit
16-Mbit
HM5117805BJ)
16-bit
74ABT16244)
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Nippon capacitors
Abstract: No abstract text available
Text: HB56UW3272ETL-5/6 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 8k Refresh, 2 Bank Module 36 pcs of 16M x 4 components HITACHI ADE-203-866 (Z) Preliminary, Rev. 0.0 Nov. 28, 1997 Description The HB56UW 3272ETL belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been
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HB56UW3272ETL-5/6
256MB
32-Mword
72-bit,
ADE-203-866
HB56UW
3272ETL
64-Mbit
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: HB56SW872ES Series 8,388,608-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-574 Z Preliminary Rev. 0.0 Apr. 15, 1996 Description The HB56SW872ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB56SW872ES
608-word
72-bit
168-pin
ADE-203-574
16-Mbit
HM51W16405)
16-bit
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Nippon capacitors
Abstract: No abstract text available
Text: HB56SW864ESN-6B/7B/8B 8,388,608-word x 64-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-561 B (Z) Preliminary Rev. 0.2 Jun. 17, 1996 Description The HB56SW864ESN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB56SW864ESN-6B/7B/8B
608-word
64-bit
168-pin
ADE-203-561
HB56SW864ESN
16-Mbit
HM51W16405)
24C02)
Nippon capacitors
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Nippon capacitors
Abstract: No abstract text available
Text: HB56UW272E Series 2,097,152-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-727A Z Rev. 1.0 Feb. 20, 1997 Description The HB56UW272E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56UW272E
152-word
72-bit
ADE-203-727A
16-Mbit
HM51W17805)
16-bit
74LVT16244)
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: HB56A272E Series 2,097,152-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-291 Description The HB56A272E belongs to 8 byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56A272E
152-word
72-bit
ADE-203-291
16-Mbit
HM5117800BTT)
16-bit
74ABT16244)
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Untitled
Abstract: No abstract text available
Text: HM5116405 Series HM5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi HM5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The
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HM5116405
HM5117405
304-word
ADE-203-633
26-pin
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Nippon capacitors
Abstract: No abstract text available
Text: HB56UW472E Series 32 MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4 k Refresh, 1-Bank Module 18 pcs of 4 M X 4 Components HITACHI ADE-203-726B (Z) Rev. 2.0 Nov. 1997 Description The HB56UW472E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB56UW472E
72-bit,
ADE-203-726B
16-Mbit
HM51W16405)
16-bit
74LVT16244)
Nippon capacitors
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