rg10
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. RG10 １ Scope The present specifications shall apply to an RG10. ２ Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification ３ Flammability UL94V-0 Equivalent ４ Absolute maximum ratings No.
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UL94V-0
rg10
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RG10
Abstract: RG10A RG10Y
Text: RG10 - RG10Y SUPER FAST RECTIFIER DIODES PRV : 70 - 600 Volts Io : 1.0 - 1.5 Amperes D2 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Super fast recovery time Pb / RoHS Free
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RG10Y
UL94V-O
MIL-STD-202,
RG10A
RG10
RG10A
RG10Y
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com RG10 - RG10Y SUPER FAST RECTIFIER DIODES
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RG10Y
UL94V-O
RG10A
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RG10
Abstract: RG10A RG10Y
Text: RG10 - RG10Y SUPER FAST RECTIFIER DIODES PRV : 70 - 600 Volts Io : 1.0 - 1.5 Amperes D2 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Super fast recovery time 1.00 25.4
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RG10Y
UL94V-O
MIL-STD-202,
RG10A
RG10
RG10A
RG10Y
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Untitled
Abstract: No abstract text available
Text: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter IFSM （A） IR IR（H） （mA） （mA） VR ＝VRM VR ＝VRM max IF Ta＝100℃ max max （A） Tstg Tj （℃） （℃） VF （V） Type No.
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Ta100
Deratin20
UL94V0
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Untitled
Abstract: No abstract text available
Text: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter IFSM (A) Tj (°C) VF (V) Tstg (°C) VRM (V) I F (AV) (A) 1000 0.7 70 1.5 RG 10 400 1.2 RG 10A 600 1.0 2.0 1.0 70 1.5 1.1 1.5 Type No. RG 1C RG 10Y
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UL94V-0
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RG10
Abstract: RG10A RG10Y RG10Z
Text: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics Ta =25°C Absolute Maximum Ratings Parameter VRM (V) I F(AV) (A) 1000 0.7 RG 10Y 70 1.5 RG 10Z 200 Type No. RG 1C Tj (°C) IFSM (A) 400 RG 10A 600 70 RG 2Y VF (V) 50Hz Half-cycle Sinewave Single Shot
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UL94V-0
RG10
RG10A
RG10Y
RG10Z
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fmgg2c
Abstract: No abstract text available
Text: Package I F AV (A) Part Number IFSM (A) 50Hz Tj (°C) 1000 Frame-2Pin IR (H) (mA) t rr VF (V) max IF V = V V = V Ta R RM R RM (A) (°C) max max Half-cycle Sinewave Single Shot Axial IR (µA) Tstg (°C) 1 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)
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100mA/100mA
100mA/200mA
fmgg2c
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Untitled
Abstract: No abstract text available
Text: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0
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O-220F
O-220F2Pin
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Untitled
Abstract: No abstract text available
Text: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V R RM R RM (A) max max t rr IF / I FP (mA) 2 (ns) IF / I FP (mA) Rth (j- ) Mass Fig. (°C/W) (g) No. 1.0 25 –40 to +150 1.2 1.0 100 0.5 100 100 100/100 50 100/200 22 0.13 1.0 30 –40 to +150 1.2 1.0 100 0.5
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100mA/100mA
100mA/200mA
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Untitled
Abstract: No abstract text available
Text: Part Number IFSM A Tj (°C) 50Hz –40 to +150 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 –40 to +150 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8 15 –40 to +150 1.8
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100mA/100mA
100mA/200mA
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AG01
Abstract: AL01 EG01 FMG-14S FMG-24S FML-14S FML-24S FML-G14S FMN-G14S FMX-G14S
Text: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V Ta R RM R RM (A) (°C) max max 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8
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FMDG26
Abstract: No abstract text available
Text: VRM V Package Part Number Surface Mount MP3-306 Axial 600 Frame-2Pin Center-tap 30 I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 t rr 2
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100mA/100mA
100mA/200mA
FMDG26
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fml-g16s
Abstract: AG01A EG01A FMC-26U FMD-G26S FMG-G26S FMG-G36S FMN-G16S FMX-G16S FMX-G26S
Text: VRM V Package Part Number Surface Mount MP3-306 Axial 600 Frame-2Pin IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 2 : I F / I R (=I F) 90% Recovery Point
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MP3-306
100mA/100mA
100mA/200mA
fml-g16s
AG01A
EG01A
FMC-26U
FMD-G26S
FMG-G26S
FMG-G36S
FMN-G16S
FMX-G16S
FMX-G26S
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fmng12
Abstract: FMXG12 AG01Z AL01Z EG01Z EN01Z MP2-202S MPL-102S FMPG12 SFPL-62
Text: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)
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100mA/100mA
100mA/200mA
SFPL-52
SFPL-62
fmng12
FMXG12
AG01Z
AL01Z
EG01Z
EN01Z
MP2-202S
MPL-102S
FMPG12
SFPL-62
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DELL 1525
Abstract: STR 456 D-73230 TEKELEC* te 358 Tekelec TE 10 75 HATTELAND TRANSISTOR c 5578 B SF 119 D H1088 nissei bv
Text: 23-013Q HITACHI EUROPE ELECTRONIC COMPONENTS GROUP European Sales Locations Sept. 1997 HITACHI EUROPE ELECTRONIC COMPONENTS GROUP PRODUCT RANGE 4-, 8-, 16-Bit Microcomputers Microprocessor - Peripherals 32-Bit Microprocessors & Microcontrollers Smart Card ICs
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23-013Q
16-Bit
32-Bit
DELL 1525
STR 456
D-73230
TEKELEC* te 358
Tekelec TE 10 75
HATTELAND
TRANSISTOR c 5578 B
SF 119 D
H1088
nissei bv
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str g 6151
Abstract: CH1290 F-67833 Hitachi DSAUTAZ006 tekelec eagle D1071 D4431 D0130 Hitachi LCD 44100
Text: 23-013A HITACHI EUROPE ELECTRONIC COMPONENTS GROUP European Sales Locations September 2001 HITACHI EUROPE ELECTRONIC COMPONENTS GROUP PRODUCT RANGE 8-, 16-Bit Microcomputers Microprocessor - Peripherals 32-Bit Microprocessors & Microcontrollers Smart Card ICs
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3-013A
16-Bit
32-Bit
str g 6151
CH1290
F-67833
Hitachi DSAUTAZ006
tekelec eagle
D1071
D4431
D0130
Hitachi LCD 44100
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RN4Z
Abstract: No abstract text available
Text: Characteristic Curves Rectifier Diodes SFPM-5 series 0.6 0.4 0.1 Ta = 150°C 100°C 60°C 25°C 0.01 t 1.6 P.C.B. Solder Land = 3.0 35µmCu 25 50 75 100 125 Ambient Temperature Ta °C 150 0.001 0.3 0.5 0.7 0.9 1.1 1.3 Forward Voltage VF (V) 30 25 20ms 20
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AN-978
Abstract: "AN-978" IR2110 AN-978 IR2110 inverter using irs2110 PWM IR2112 IRF540 ir2110 Application Note AN-967 PWM IR2117 dc to dc converter IR2110 INVERTER SCHEMATIC full bridge ir2110 Inverter IR2110
Text: Application Note AN-978 HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Table of Contents Page Gate drive requirement of high-side devices. 2 A typical block diagram . 3
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AN-978
AN-967
com/technical-info/appnotes/an-967
AN-961
com/technical-info/appnotes/an-961
AN-959
com/technical-info/appnotes/an-959
AN-978
"AN-978" IR2110
AN-978 IR2110
inverter using irs2110
PWM IR2112 IRF540
ir2110 Application Note AN-967
PWM IR2117 dc to dc converter
IR2110 INVERTER SCHEMATIC
full bridge ir2110
Inverter IR2110
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DC motor speed control using 555 timer and mosfet
Abstract: ac control using ir2110 and mosfet IR2110 INVERTER SCHEMATIC 1n2074a driver circuit for MOSFET IR2110 PWM IR2110 for CIRCUIT inverter IR2110 INVERTER DIAGRAM AN978 1N2074 IR2110 buck boost converter
Text: APPLICATION NOTE AN978 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD
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AN978
116ns
AN-967
AN-961
AN-959
DC motor speed control using 555 timer and mosfet
ac control using ir2110 and mosfet
IR2110 INVERTER SCHEMATIC
1n2074a
driver circuit for MOSFET IR2110
PWM IR2110 for CIRCUIT inverter
IR2110 INVERTER DIAGRAM
AN978
1N2074
IR2110 buck boost converter
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power inverter schematic diagram ir2110
Abstract: IR2110 INVERTER SCHEMATIC 1n 4148 zener diode DIODE LN4148 full bridge ir2110 IR2110 full bridge inverter PWM IR2112 IRF540 pin configuration IR2110 INVERTER DIAGRAM 1n2074a Inverter IR2110
Text: Index AN-978 V. Int HV Floating MOS-Gate Driver ICs (HEXFET is a trademark of International Rectifier) Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD Bootstrap operation How to select the bootstrap components
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AN-978
116ns
AN-967
AN-961
AN-959
power inverter schematic diagram ir2110
IR2110 INVERTER SCHEMATIC
1n 4148 zener diode
DIODE LN4148
full bridge ir2110
IR2110 full bridge inverter
PWM IR2112 IRF540 pin configuration
IR2110 INVERTER DIAGRAM
1n2074a
Inverter IR2110
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1n2074a
Abstract: DT98-2a Bootstrap Component Selection for Cont power inverter schematic diagram ir2110 AN978a Inverter IR2110 full bridge ir2110 PWM IR2112 IRF540 ac control using ir2110 and mosfet h bridge irf740 h bridge ir2110
Text: APPLICATION NOTE AN978-b International Rectifier • 233 Kansas Street El Segundo CA 90245 USA HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD
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AN978-b
116ns
AN-967
AN-961
AN-959
1n2074a
DT98-2a Bootstrap Component Selection for Cont
power inverter schematic diagram ir2110
AN978a
Inverter IR2110
full bridge ir2110
PWM IR2112 IRF540
ac control using ir2110 and mosfet
h bridge irf740
h bridge ir2110
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Untitled
Abstract: No abstract text available
Text: High efficient rectifier diodes. 1 Amp. to 2 Amps. The plastic material carries U/L recognition 94V-0. Maximum Average Max. Recurrent Repetitive Forward Peak Forward Surge Forward Rectified Reverse TYPE Current Current Current Voltage V rrm Ifrm I fsm IF AV Ta
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OCR Scan
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HER101/SE1A
DO-41/SMA
HER101
HER102
HER103
HER104
HER106
HER107
HER151/SEOA
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Untitled
Abstract: No abstract text available
Text: DI9952 DUAL N & P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell D ensity DMOS Technology Low O n-S tate Resistance High Pow er and C urrent C apability Fast Sw itching Speed High Transient Tolerance SO-8 llll P-CHANNEL tpTffl ,6 uuu A
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OCR Scan
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DI9952
DS11509
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