RFS1006 Search Results

RFS1006 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RFS 1006		Anadigics	Single-band power amplifiers		Original	PDF
RFS1006		Anadigics	3.4-3.6 GHz Power Amplifier		Original	PDF
RFS1006		RF Solutions	3.4-3.6 GHz Power Amplifier		Original	PDF

RFS1006 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: RFS1006 3.4-3.6 GHz Power Amplifier Product Description Applications The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for fixed wireless	Original	PDF	RFS1006 RFS1006 24-pin DRFS-1006-0DSH
RFS1006 Abstract: 3436 Text: RFS1006 3.4-3.6 GHz Power Amplifier Product Description Applications The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for	Original	PDF	RFS1006 RFS1006 DRFS-1006-0DSH 3436
Untitled Abstract: No abstract text available Text: Application Note RFS1006-AN1 #RRNKECVKQP0QVGHQT4 5'XCNWCVKQP$QCTF 2QYGT 5GSWGPEKPI 6JG 4(5 RQYGT CORNKHKGT KU C C#U /'5('6 2# CPF TGSWKTGU DQVJ C RQUKVKXG FTCKP CPF PGICVKXG ICVG XQNVCIG 4GHGT VQ VJG DQCTF NC[QWV FKCITCO KPFKECVKPI XQNVCIG ITQWPF CPF 4( EQPPGEVQTU HQT RTQRGT EQPPGEVKQP 2TQRGT RQYGT WR CPF	Original	PDF	RFS1006-AN1
PRFS-1006-0005 Abstract: PRFS-1006-0006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-0009 PRFS-1006-0EVL RFS1006 Text: RFS1006 3.4-3.6 GHz Power Amplifier Product Description Applications The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for fixed wireless	Original	PDF	RFS1006 RFS1006 PRFS-1006-0005 PRFS-1006-0006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-0009 PRFS-1006-0EVL
C1027 Abstract: transistor c1027 c1027 transistor C1032 C1007 tp1002 tp1006 TP1003 C1015 transistor C1018 Text: Application Note RFS1006-AN1 Application Note for RFS1006 Evaluation Board Power Sequencing The RFS1006 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF	Original	PDF	RFS1006-AN1 RFS1006 J1004 C1027 transistor c1027 c1027 transistor C1032 C1007 tp1002 tp1006 TP1003 C1015 transistor C1018
3906 PNP TRANSISTOR Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation Text: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET	Original	PDF	AN-0002 3906 PNP TRANSISTOR irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation