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    RFP10 Search Results

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    RFP10 Price and Stock

    Brady Worldwide Inc RFP100

    (RFP) RFP100, PAD, 15"X19", HVY,
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    DigiKey RFP100 Bulk 1
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    RS RFP100 Box 1
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    Techni-Tool, Inc. RFP100
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    TestEquity LLC RFP100
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    Rochester Electronics LLC RFP10P15

    P-CHANNEL POWER MOSFET
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    DigiKey RFP10P15 Bulk 130
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    Rochester Electronics LLC RFP10P12

    P-CHANNEL POWER MOSFET
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    DigiKey RFP10P12 Bulk 300
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    Rochester Electronics LLC RFP10N15L

    N-CHANNEL POWER MOSFET
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    DigiKey RFP10N15L Bulk 342
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    Rochester Electronics LLC RFP10N12L

    N-CHANNEL POWER MOSFET
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    RFP10 Datasheets (131)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFP-100-100RE Anaren Flanged Resistors 100 Watts, 100 Ohms Original PDF
    RFP-100-100RH Anaren Flanged Resistors 100 Watts, 100 Ohms Original PDF
    RFP-100-100RW Anaren Flanged Resistors 100 Watts, 100 Ohms Original PDF
    RFP-100-100RW-S Anaren Full Flange Resistor 100 Watts, 100Ohms Original PDF
    RFP-100-10AE Anaren Flanged Attenuators 100 Watts Original PDF
    RFP-100-10AF Anaren Flangeless Attenuators 100 Watts Original PDF
    RFP-100-10AMZ Anaren Flanged Attenuators 100 Watts Original PDF
    RFP-100-1AE Anaren Flanged Attenuators 100 Watts Original PDF
    RFP-100-1AE-S Anaren Full Flange Attenuators 100 Watts Original PDF
    RFP-100-1AF Anaren Flangeless Attenuators 100 Watts Original PDF
    RFP-100-1AMZ Anaren Flanged Attenuators 100 Watts Original PDF
    RFP-100200-4X50-2 Anaren Chip Termination Original PDF
    RFP-100200-4Y100-2 Anaren Surface Mount Resistors 5 Watts, 100 Ohms Original PDF
    RFP-100200-4Z50-2 Anaren Surface Mount Termination 10 Watts, 50 Ohms Original PDF
    RFP-100200A25X50 Anaren Chip Termination Original PDF
    RFP-100200A25X50 Anaren Alumina Terminations 20 Watts, 50 Ohms Original PDF
    RFP-100200A25Z50 Anaren Surface Mount Termination 10 Watts, 50ohm Original PDF
    RFP-100200A25Z50 Anaren Surface Mount Termination 50 Ohms Original PDF
    RFP-100200N4X50-2 Anaren Aluminum Nitride Termination 30 Watts, 50 Ohms Original PDF
    RFP-100200N4Z50-2 Anaren Aluminum Nitride Termination 10 Watts, 50 Ohms Original PDF
    ...

    RFP10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    f10p03l

    Abstract: 10P03L 10p03 Logic Level p-Channel Power MOSFET TA49205 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L n097
    Text: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet January 2002 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET Features These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,


    Original     		PDF RFD10P03L, RFD10P03LSM, RFP10P03L TA49205. f10p03l 10P03L 10p03 Logic Level p-Channel Power MOSFET TA49205 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L n097

    f10p03l

    Abstract: TC227 25e-2 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
    Text: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET Title FD1 03L, D10 3LS eyrds ter- 3515.2 Features • 10A, 30V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,


    Original     		PDF RFD10P03L, RFD10P03LSM, RFP10P03L TA49205. f10p03l TC227 25e-2 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L

    RFM10P12

    Abstract: RFM10P15 TA940 RFP10P12 RFP10P15 TB334
    Text: RFP10P15 Data Sheet -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching


    Original     		PDF RFP10P15 -150V, -150V TA9404. RFM10P12 RFM10P15 TA940 RFP10P12 RFP10P15 TB334

    f10p03l

    Abstract: TC227 RFD10P03LSM RFD10P03L RFD10P03LSM9A RFP10P03L Logic Level p-Channel Power MOSFET 10P03L
    Text: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET 3515.2 Features • 10A, 30V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,


    Original     		PDF RFD10P03L, RFD10P03LSM, RFP10P03L TA49205. f10p03l TC227 RFD10P03LSM RFD10P03L RFD10P03LSM9A RFP10P03L Logic Level p-Channel Power MOSFET 10P03L

    TB334

    Abstract: AN7254 AN7260 RFP10N15 SA diode RFP10
    Text: RFP10N15 Data Sheet March 1999 10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs Features These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		PDF RFP10N15 TB334 TA09192. O-220AB TB334 AN7254 AN7260 RFP10N15 SA diode RFP10

    f10p03l

    Abstract: RFD10P03LSM RFD10P03L RFD10P03LSM9A RFP10P03L Logic Level p-Channel Power MOSFET TC227
    Text: RFD10P03L, RFD10P03LSM, RFP10P03L S E M I C O N D U C T O R 10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses


    Original     		PDF RFD10P03L, RFD10P03LSM, RFP10P03L 1-800-4-HARRIS f10p03l RFD10P03LSM RFD10P03L RFD10P03LSM9A RFP10P03L Logic Level p-Channel Power MOSFET TC227

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    1AMZ transistor

    Abstract: RFP-100-1AMZ 1AMZ 1005AM RFP-100-2AMZ RFP-100-3AMZ RFP-100-4AMZ RFP-100-5AMZ RFP-100-6AMZ 10030A
    Text: 100 Watts Flanged Attenuators Model RFP-100-XXAMZ Flanged Attenuators General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Lead s : Features Thick film Beryllium oxide ceramic Alumina ceramic Copper nickel plated per QQ-N-290 99.99% pure silver (.005” thk)


    Original     		PDF RFP-100-XXAMZ QQ-N-290 MIL-E-5400. 1AMZ transistor RFP-100-1AMZ 1AMZ 1005AM RFP-100-2AMZ RFP-100-3AMZ RFP-100-4AMZ RFP-100-5AMZ RFP-100-6AMZ 10030A

    F10N12L

    Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
    Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)


    OCR Scan     		PDF RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L 92CS-3374I RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N12L F10N15L 10N15L F10N12 RFP10N15L F10N15 10n15

    RCA 467

    Abstract: TA9405 RFM10P12 transistor RCA 467 RFP10P12 TA9404 TA940 92CS-38272 RFM10P15 RFP10P15
    Text: Standard Power M O S F E Ts_ RFM10P12, RFM10P15, RFP10P12, RFP10P15 File Number 1595 P-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, -120V and -150 V rDS on = 0.5 n TE R M IN A L DIA G R A M Features: • ■ ■ •


    OCR Scan     		PDF RFM10P12, RFM10P15, RFP10P12, RFP10P15 -120V RFM10P12 RFM10P15 RFP10P12 RFP10P15* 2CS-992T3 RCA 467 TA9405 transistor RCA 467 TA9404 TA940 92CS-38272 RFP10P15

    M339

    Abstract: RFP10N15 transistor m339 ta9192 RFP10N12 RFM10N12 RFM10N15
    Text: □1 DE I 3fl7SDfll DDlflim S | ~ 3875081 G E SOLID STATE 0 1E 18141 D T -3 9 ’] / Standard Power MOSFETs_ RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber 1445 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi


    OCR Scan     		PDF 3fl75Dfll RFM10N12, RFM10N15, RFP10N12, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* switchin5081" M339 transistor m339 ta9192

    F10P03L

    Abstract: 10P03L p-channel mosfet BL Harris Semiconductor Integrated Circuits N10T TC227 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
    Text: RFD10P03L, RFD10P03LSM, RFP10P03L HARRIS S E M I C O N D U C T O R 10A, 30V, 0.200&, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufac­ tured using the MegaFET process. This process, which uses


    OCR Scan     		PDF RFD10P03L, RFD10P03LSM, RFP10P03L 1-800-4-HARRIS F10P03L 10P03L p-channel mosfet BL Harris Semiconductor Integrated Circuits N10T TC227 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L

    RFP10P03L

    Abstract: No abstract text available
    Text: RFD10P03L, RFD10P03LSM RFP10P03L ill HARRIS U U S E M I C O N D U C T O R March 1994 10A, -30V, Avalanche Rated, Logic Level P-Channel Enhancem ent-M ode Power M OSFETs MegaFETs Package Features TO-220AB • 10A.-30V TOP VIEW • r DS(ON) ~ 0.200U 1— • UIS Rating Curve (Single Pulse)


    OCR Scan     		PDF RFD10P03L, RFD10P03LSM RFP10P03L O-220AB O-251AA RFP10P03L 32e-1 50e-3 38e-5) 43e-9

    RFM10P12

    Abstract: RFM10P15 RFP10P12 RFP10P15 rca MIL ID TA9404 rca solid state Linear I8233
    Text: "Öl G E SOLID STATE DE . 3 8 7 5 0 8 1 G E SO LID STATE Standard Power MOSFETs_ I 3Û750S1 01E Ì 8233 RFM10P12, RFM10P15, RFP10P12, RFP10P15 0010233 0 |~~ D T - 3 ^ -2 / F ile N u m b e r 1595 T E R M IN A L DIA G RAM P-Channel Enhancement-Mode


    OCR Scan     		PDF RFM10P12, RFM10P15, RFP10P12, RFP10P15 -120V and-150 RFM10P12 RFM10P15 RFP10P12 RFP10P15* RFP10P15 rca MIL ID TA9404 rca solid state Linear I8233

    TB334

    Abstract: RFP10N12 AN7254 RFM10N12 RFM10N15 RFP10N15 TB-334
    Text: R M S RFM10N12, RFM10N15, RFP10N12, RFP10N15 Semiconductor October 1998 Data Sheet File Number 1445.2 Features 10A, 120V and 150V, 0.300 Ohm, N-Channel Power MOSFETs • 10A, 120V and 150V These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFM10N12, RFM10N15, RFP10N12, RFP10N15 TA09192. RFM10N12 T0-204AA RFM10N12 RFM10N15 TB334 RFP10N12 AN7254 RFP10N15 TB-334

    10N15

    Abstract: 10N12 rfm10n rfp10n12
    Text: 2 HARRIS RFM10N12/10N15 RFP10N12/10N15 N-Channel Enhancement Mode Power Field Effect Transistors ugust 1991 Features Packages T0-204AA • 10A, 120V and 150V T0 2 • rDS on = 0.3ft • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF RFM10N12/10N15 RFP10N12/10N15 T0-204AA RFM10N12 RFM10N15 RFP10N12 RFP10N15 AN-7254 AN-7260 10N15 10N12 rfm10n

    RFM1

    Abstract: L92C
    Text: HARIRIS R FM 10N 12/10N 15 RFP10N12/1 ON 15 N-Channel Enhancement Mode Power Field Effect Transistors A u g u st 1991 Packages Features • TO-204AA 10A, 1 2 0V and 1 5 0V • rD S on = 0 .3 ÎÏ • S O A is P ow er-D issip atlo n Lim ited • N anosecond S w itching S peeds


    OCR Scan     		PDF 12/10N RFP10N12/1 O-204AA RFM10N12 RFM10N15 RFP10N12 RFP10N15 RFM1 L92C

    ta9192

    Abstract: RFP10N12 RFM10N12 RFM10N15 RFP10N15
    Text: RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi 1445 Features: co-V-'hI T j O • S O A is pow er-dissipation lim ited ■ N an o seco n d sw itch in g sp e e d s


    OCR Scan     		PDF RFM10N12, RFM10N15, RFP10N12, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* ta9192 RFP10N15

    10n12

    Abstract: 92CS-3780I ta9192 RFM10N15 RFM1 RFP mosfets ta9212 A9212 RFM10N12 RFP10N12
    Text: Standard Power M OSFETs- -— -——- RFM10N12, RFM10N15, RFP I0N1I2, RFP10N15 N-Channel Enhancement-Mod Power Field-Effect Transistors — - File Number 1445 % 10 A, 120 V — 150 V


    OCR Scan     		PDF RFM10N12, RFM10N15, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* RFP10M12, 10n12 92CS-3780I ta9192 RFM1 RFP mosfets ta9212 A9212

    Untitled

    Abstract: No abstract text available
    Text: RFM10P12, RFM10P15, RFP10P12, RFP10P15 H A R R IS S E M I C O N D U C T O R -10A, -120V and -150V, 0.5 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -10A,-120V and-150V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFM10P12, RFM10P15, RFP10P12, RFP10P15 -120V -150V, and-150V TA9404. AN7254

    2216H

    Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
    Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.


    OCR Scan     		PDF TMP95CS54 16-Bit TMP95CS54F TMP95CS54 100-pin 900/H TLCS-90/900 2216H XZ MC11 LQFP100-P-1414-0 TMP95CS54F

    RFL10N15

    Abstract: 330 e57
    Text: H A RR IS S E N I C O N D SECT OR bflE D • 430 E57 1 G D S 1 QT 4 t,43 ■ HARRIS HAS P C F 10N 15W P^jF1 0N15D SEMICONDUCTOR January 1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain • Tri-Metal AI-TI-Ni


    OCR Scan     		PDF 0N15D Mii-Std-750, RFM10N15 RFP10N15 RFL10N15 PCF10N15W PCF10N15D 122x122 1-800-4-HARRIS RFL10N15 330 e57

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


    OCR Scan     		PDF T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N