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    RFD16N02L Search Results

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    RFD16N02L Price and Stock

    Rochester Electronics LLC RFD16N02L

    16A, 20V, 0.022 OHM, N-CHANNEL L
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFD16N02L Bulk 606
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.5
    • 10000 $0.5
    		Buy Now

    Harris Semiconductor RFD16N02L

    16A, 20V, 0.022 OHM, N-Channel LOGIC LEVEL POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFD16N02L 1,793 1
    • 1 $0.4767
    • 10 $0.4767
    • 100 $0.4481
    • 1000 $0.4052
    • 10000 $0.4052
    		Buy Now

    RFD16N02L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFD16N02L Harris Semiconductor 16A, 20V, 0.022 ohm, N-Channel Logic Level Power MOSFET Original PDF
    RFD16N02L Intersil 16A, 20V, 0.022 ?, N-Channel, Logic Level, Power MOSFET Original PDF
    RFD16N02LSM Harris Semiconductor 16A, 20V, 0.022 ohm, N-Channel Logic Level Power MOSFET Original PDF
    RFD16N02LSM Intersil 16A, 20V, 0.022 ?, N-Channel, Logic Level, Power MOSFET Original PDF

    RFD16N02L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN7254

    Abstract: AN7260 AN9321 AN9322 RFD16N02L RFD16N02LSM RFD16N02LSM9A
    Text: RFD16N02L, RFD16N02LSM 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of


    Original     		PDF RFD16N02L, RFD16N02LSM RFD16N02L RFD16N02LSM AN7254 AN7260 AN9321 AN9322 RFD16N02LSM9A

    RFD16N02L

    Abstract: RFD16N02LSM RFD16N02LSM9A AN7254 AN7260 AN9321 AN9322
    Text: RFD16N02L, RFD16N02LSM S E M I C O N D U C T O R 16A, 20V, 0.022Ω, N-Channel Logic Level Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of


    Original     		PDF RFD16N02L, RFD16N02LSM RFD16N02L RFD16N02LSM 1-800-4-HARRIS RFD16N02LSM9A AN7254 AN7260 AN9321 AN9322

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:[email protected] Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30

    cq 724 g diode

    Abstract: No abstract text available
    Text: RFD16N02L, RFD16N02LSM HARRIS S E M I C O N D U C T O R 16A, 20V, 0.022Q, N-Channel Logic Level Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of


    OCR Scan     		PDF RFD16N02L, RFD16N02LSM RFD16N02L RFD16N02LSM 1-800-4-HARR cq 724 g diode

    Untitled

    Abstract: No abstract text available
    Text: HAJtms S RFD16N02L, RFD16N02LSM Semiconductor y 16A, 20V, 0.022É1, N-Channel, Logic Level, Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of


    OCR Scan     		PDF RFD16N02L, RFD16N02LSM RFD16N02L RFD16N02LSM T0-252AA 330mm EIA-481