Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB504C R07DS0285EJ0700 Previous: REJ03G0836-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz
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BB504C
R07DS0285EJ0700
REJ03G0836-0600)
OT-343mod)
PTSP0004ZA-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB504C R07DS0285EJ0700 Previous: REJ03G0836-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz
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BB504C
R07DS0285EJ0700
REJ03G0836-0600)
OT-343mod)
PTSP0004ZA-A
BB504C
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz
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BB504M
R07DS0286EJ0800
REJ03G0837-0700)
OT-143Rmod)
PLSP0004ZA-A
BB504M
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz
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Original
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PDF
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BB504M
R07DS0286EJ0800
REJ03G0837-0700)
OT-143Rmod)
PLSP0004ZA-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz
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BB504M
R07DS0286EJ0800
REJ03G0837-0700)
OT-143Rmod)
PLSP0004ZA-A
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BB502C
Abstract: C5 MARKING CODE SOT 247 rfc bb 204
Text: BB502C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0832-0600 Previous ADE-208-810C Rev.6.00 Apr 27, 2006 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz
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BB502C
REJ03G0832-0600
ADE-208-810C)
200pF,
OT-343mod)
PTSP0004ZA-A
BB502C
C5 MARKING CODE SOT 247
rfc bb 204
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB502C R07DS0283EJ0700 Previous: REJ03G0832-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz
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BB502C
R07DS0283EJ0700
REJ03G0832-0600)
200pF,
OT-343mod)
PTSP0004ZA-A
BB502C
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB502M R07DS0284EJ0600 Previous: REJ03G0833-0500 Rev.6.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz
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BB502M
R07DS0284EJ0600
REJ03G0833-0500)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB502M
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB502C R07DS0283EJ0700 Previous: REJ03G0832-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz
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BB502C
R07DS0283EJ0700
REJ03G0832-0600)
200pF,
OT-343mod)
PTSP0004ZA-A
BB502C
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB502M R07DS0284EJ0600 Previous: REJ03G0833-0500 Rev.6.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz
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BB502M
R07DS0284EJ0600
REJ03G0833-0500)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB502M
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RJ45 to usb convert
Abstract: RGMII EN125 USB to ethernet bridge 27.12MHz AX88178 pulse of 4017 ax88178lf cmos 4008 Gigabit Ethernet PHY
Text: AX88178 L USB to 10/100/1000 Gigabit Ethernet/HomePNA Controller Document No: AX88178-02/4/20/2004 Features • • • • • • • • • • Single chip USB to 10/100/1000 Gigabit Ethernet and HomePNA and HomePlug Network Controller USB specification 1.0 and 1.1 and 2.0 compliant
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AX88178
AX88178-02/4/20/2004
10BASE-T,
100BASE-TX,
1000BASE-T)
AX88178
RJ45 to usb convert
RGMII
EN125
USB to ethernet bridge
27.12MHz
pulse of 4017
ax88178lf
cmos 4008
Gigabit Ethernet PHY
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RJ45 to usb convert
Abstract: 7412 voltage regulator ASIX ELECTRONICS CORPORATION mac air i5 specs magnetic less ethernet RGMII usb rj45 converter AX88178 Gigabit Ethernet PHY EN125
Text: AX88178 USB to 10/100/1000 Gigabit Ethernet/HomePNA Controller Document No: AX88178-07/6/21/05 Features • • • • • • • • • • Single chip USB to 10/100/1000 Gigabit Ethernet and HomePNA and HomePlug Network Controller USB specification 1.0 and 1.1 and 2.0 compliant
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AX88178
AX88178-07/6/21/05
10BASE-T,
100BASE-TX,
1000BASE-T)
RJ45 to usb convert
7412 voltage regulator
ASIX ELECTRONICS CORPORATION
mac air i5 specs
magnetic less ethernet
RGMII
usb rj45 converter
AX88178
Gigabit Ethernet PHY
EN125
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BB506M
Abstract: No abstract text available
Text: BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. f = 900 MHz • Low noise NF = 1.4 dB typ. (f = 900 MHz)
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BB506M
REJ03G1604-0100
OT-343mod)
PLSP0004ZA-A
BB506M
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27.12Mhz
Abstract: RJ45 to usb convert PIN DIAGRAM OF RJ45 to usb AX88772L Crystal 27.12MHz 10/100 BASE TRANSFORMERS LAN COMPONENTS ASIX ELECTRONICS CORPORATION mac air i5 specs AX88772 USB to ethernet bridge
Text: AX88772 USB to 10/100 Fast Ethernet/HomePNA Controller Document No: AX88772_07/6/21/05 Features • • • • • • • • • • Single chip USB to 10/100 Fast Ethernet and HomePNA and HomePlug Network Controller Integrates on-chip 10/100Mbps Fast Ethernet PHY
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AX88772
AX88772
10/100Mbps
10BASE-T
100BASE-TX
27.12Mhz
RJ45 to usb convert
PIN DIAGRAM OF RJ45 to usb
AX88772L
Crystal 27.12MHz
10/100 BASE TRANSFORMERS LAN COMPONENTS
ASIX ELECTRONICS CORPORATION
mac air i5 specs
USB to ethernet bridge
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB505C R07DS0287EJ0200 Previous: REJ03G0364-0100 Rev.2.00 Mar 28, 2011 Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.5 dB typ. at f = 900 MHz
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BB505C
R07DS0287EJ0200
REJ03G0364-0100)
OT-343mod)
PTSP0004ZA-A
BB505C
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RENESAS marking code package sot 89
Abstract: No abstract text available
Text: Preliminary Datasheet BB505C R07DS0287EJ0200 Previous: REJ03G0364-0100 Rev.2.00 Mar 28, 2011 Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.5 dB typ. at f = 900 MHz
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BB505C
R07DS0287EJ0200
REJ03G0364-0100)
OT-343mod)
PTSP0004ZA-A
BB505C
RENESAS marking code package sot 89
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB506M R07DS0289EJ0200 Previous: REJ03G1604-0100 Rev.2.00 Mar 28, 2011 Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. High gain PG = 24 dB typ. (f = 900 MHz)
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BB506M
OT-143mod)
R07DS0289EJ0200
REJ03G1604-0100)
PLSP0004ZA-A
BB506M
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BB506CFS
Abstract: No abstract text available
Text: Preliminary Datasheet BB506C R07DS0288EJ0200 Previous: REJ03G1246-0100 Rev.2.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. High gain PG = 24 dB typ. (f = 900 MHz)
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BB506C
OT-343mod)
R07DS0288EJ0200
REJ03G1246-0100)
PTSP0004ZA-A
BB506C
BB506CFS
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AX88772
Abstract: EN125 0X0904
Text: AX88772 USB to 10/100 Fast Ethernet/HomePNA Controller Document No: AX88772_10/9/15/06 Features • • • • • • • • • • Single chip USB to 10/100 Fast Ethernet and HomePNA and HomePlug Network Controller Integrates on-chip 10/100Mbps Fast Ethernet PHY
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AX88772
AX88772
10/100Mbps
10BASE-T
100BASE-TX
EN125
0X0904
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SBK160808T-110Y-S
Abstract: AX88772 810-A0 rj45-10 USB to ethernet bridge v11424
Text: AX88772 USB to 10/100 Fast Ethernet/HomePNA Controller Document No: AX88772_11/4/24/07 Features • • • • • • • • • • Single chip USB to 10/100 Fast Ethernet and HomePNA and HomePlug Network Controller Integrates on-chip 10/100Mbps Fast Ethernet PHY
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AX88772
AX88772
10/100Mbps
10BASE-T
100BASE-TX
XIN12M
XIN25M
XOUT25M
XIN25M/XOUT25M
SBK160808T-110Y-S
810-A0
rj45-10
USB to ethernet bridge
v11424
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BB506M
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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B1030
Abstract: high voltage swiching transistors swiching full KSC2752
Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic Unit Collector- Base Voltage Collector-Em itter Voltage V cbO 500 V V cE O 400 V Emitter- Base Voltage VEbo 7 V
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OCR Scan
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PDF
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KSC2752
300ns,
00bDb7M
B1030
high voltage swiching transistors
swiching full
KSC2752
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A6S00
Abstract: No abstract text available
Text: BR28C16A B R 9 f iC 1 6 A 2KX8 ^ 7 h CM0S 5V EEPR0M 2K X8B it CMOS 5V EEPROM Ï O n m m r V 'li 1 • £Hë\l's£iil/Dim ensions Unit : mm BR28C16A t±, 2048 9 - K X 8 \£"j h • ij (E E P R O M ) T ' t „ 5 V J H - * iS ? * b ftl/, m*lliL%Ü:WêjA*ttzi'-r-r
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OCR Scan
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BR28C16A
BR28C16A
150ns
28C16A
A6S00
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