Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RF TRANSISTOR S-PARAMETER AT 4GHZ Search Results

    RF TRANSISTOR S-PARAMETER AT 4GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR S-PARAMETER AT 4GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=13dB at 2GHz  48V Typical Packaged Performance


    Original     		PDF RF3934D 96mmx4 57mmx0 DS110520

    Untitled

    Abstract: No abstract text available
    Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   RF IN VG Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged


    Original     		PDF RF3934D RF3934D 96mmx4 57mmx0 DS110520

    DS1304

    Abstract: RFMD HEMT GaN SiC amplifier circuit diagram class E 30w
    Text: RF3931D 30W GaN on SiC Power Amplifier Die Package: Die Features • Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain = 14dB at 2GHz  48V Typical Packaged Performance  Output Power: 50W at P3dB  Drain Efficiency: 65% at P3dB


    Original     		PDF RF3931D RF3931D DS130423 DS1304 RFMD HEMT GaN SiC amplifier circuit diagram class E 30w

    ATC520L103KT16T

    Abstract: ATC520L103KT16
    Text: GSA504-12 InGaP HBT Gain Block Product Features Product Description ● DC to 4GHz Package The GSA504-12 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 1MHz to 4GHz frequency range with 20dB nominal gain at 2GHz. ● +15 dBm P-1dB at 2GHz


    Original     		PDF GSA504-12 GSA504-12 ATC520L103KT16T ATC520L103KT16

    GSA804-12

    Abstract: s parameters 4ghz 4ghz s parameters transistor 4ghz transistor n ATC520L103KT16
    Text: GSA804-12 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● 0805 Lead–Free/green package ● Available as bare die


    Original     		PDF GSA804-12 GSA804-12 s parameters 4ghz 4ghz s parameters transistor 4ghz transistor n ATC520L103KT16

    ATC520L103KT16T

    Abstract: Amplifier SOT-89 c4 GSA804-89 s parameters 4ghz ATC520L103KT16
    Text: GSA804-89 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● SOT-89 Lead–Free/green package ● Available as bare die


    Original     		PDF GSA804-89 OT-89 GSA804-89 ATC520L103KT16T Amplifier SOT-89 c4 s parameters 4ghz ATC520L103KT16

    ATC520L103KT16T

    Abstract: bipolar transistor ghz s-parameter GSA-603 RF Transistor s-parameter GSA603-00 Transistor s-parameter at 2GHz bipolar transistor s-parameter RF Transistor s-parameter at 4GHz 4ghz s parameters transistor BCS-802JLC
    Text: GSA603-00 InGaP HBT Gain Block DIE Product Features Product Description ● 0.01MHz to 4 GHz The GSA603-00 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 0.01MHz to 4GHz frequency range with 18dB nominal gain at 2GHz. ● +16 dBm P-1dB at 2GHz


    Original     		PDF GSA603-00 01MHz GSA603-00 100um ATC520L103KT16T bipolar transistor ghz s-parameter GSA-603 RF Transistor s-parameter Transistor s-parameter at 2GHz bipolar transistor s-parameter RF Transistor s-parameter at 4GHz 4ghz s parameters transistor BCS-802JLC

    AN569

    Abstract: coupler s-band high power N6226982-L-0384 all transistor datasheet Hewlett-Packard transistor microwave all transistor AM81214-060 AM82731-050 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study
    Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS M. Deiss - R. Marley 1. ABSTRACT The continuing efforts to design and produce phased array radar systems have resulted in an increased need for relative insertion phase length data on individual microwave power transistors. The inclusion of


    Original     		PDF AN569 AN569 coupler s-band high power N6226982-L-0384 all transistor datasheet Hewlett-Packard transistor microwave all transistor AM81214-060 AM82731-050 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study

    transistor SMD p90

    Abstract: transistor 431 smd T1G6001528-Q3 smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd
    Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features


    Original     		PDF T1G6001528-Q3 T1G6001528-Q3 transistor SMD p90 transistor 431 smd smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd

    Untitled

    Abstract: No abstract text available
    Text: CHK025A-SOA 25W Power Packaged Transistor GaN HEMT on SiC Description The CHK025A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and


    Original     		PDF CHK025A-SOA CHK025A-SOA 200mA, DSCHK025ASOA3021

    transistor w 431

    Abstract: transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd
    Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features


    Original     		PDF T1G6001528-Q3 T1G6001528-Q3 transistor w 431 transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd

    RF3934D

    Abstract: GaN amplifier 120W SiC BJT RFMD HEMT GaN SiC 120w power Operational amplifier 10A
    Text: RF3934D 120W GaN on SiC POWER AMPLIFIER DIE RF3934D Proposed 120W GaN ON SiC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged


    Original     		PDF RF3934D RF3934D 96mmx4 57mmx0 DS110225 GaN amplifier 120W SiC BJT RFMD HEMT GaN SiC 120w power Operational amplifier 10A

    BFR360

    Abstract: BFR360T GPS05996
    Text: BFR360T NPN Silicon RF Transistor 3 Target Data • • • • For Low Voltage / Low Current Applications For Low Noise Amplifiers For Oscillators up to 4GHz and Pout > 10dBm Low Noise Figure : 1.1dB at 2.0GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device,


    Original     		PDF BFR360T 10dBm VPS05996 P-SC-75 GPS05996 BFR360 BFR360T GPS05996

    BFP620 acs

    Abstract: BFP620 s parameters 4ghz
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		PDF BFP620 VPS05605 OT343 -j100 Aug-29-2001 BFP620 acs BFP620 s parameters 4ghz

    Untitled

    Abstract: No abstract text available
    Text: RF3932D RF3932D 60W GaN on SiC Power Amplifier Die Package: Die The RF3932D is a 48V, 60W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general


    Original     		PDF RF3932D RF3932D 49dBm DS130906

    Untitled

    Abstract: No abstract text available
    Text: RF3934D 120W GaN on SiC Power Amplifier Die RF3934D Package: Die Features The RF3934D is a 48V, 120W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical and general


    Original     		PDF RF3934D RF3934D 51dBm DS130906

    Untitled

    Abstract: No abstract text available
    Text: RF3933D RF3933D 90W GaN on SiC Power Amplifier Die Package: Die The RF3933D is a 48V, 90W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical and general


    Original     		PDF RF3933D RF3933D DS130906

    Untitled

    Abstract: No abstract text available
    Text: RF3931D RF3931D 30W GaN on SiC Power Amplifier Die Package: Die The RF3931D is a 48V, 30W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general


    Original     		PDF RF3931D RF3931D DS130906

    Untitled

    Abstract: No abstract text available
    Text: RFHA3942D RFHA3942D 35W Linear GaN on SiC Power Amplifier Die The RFHA3942D is a 48V, 35W, GaN on SiC high power discrete amplifier die designed for military communications, electronic warfare, general purpose broadband, commercial wireless infrastructure, and industrial/scientific/medical applications. Using


    Original     		PDF RFHA3942D RFHA3942D DS131024

    Amplifier SOT-89 c4

    Abstract: No abstract text available
    Text: GSA503-89 InGaP HBT Gain Block Product Features Product Description ● DC to 3.5GHz Package The GSA503-89 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 1MHz to 3GHz frequency range with 20 dB nominal gain at 2GHz. ● +16 dBm P-1dB at 2GHz


    Original     		PDF GSA503-89 GSA503-89 OT-89 Amplifier SOT-89 c4

    GSA603-12

    Abstract: GSA-603-12 gsa603
    Text: GSA603-12 InGaP HBT Gain Block Product Features ● DC to 3.5GHz ● +16 dBm P-1dB at 2GHz ● +28 dBm OIP3 at 2GHz ● 18 dB Gain at 2GHz ● 3.8 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die


    Original     		PDF GSA603-12 GSA603-12 GSA-603-12 gsa603

    ACS 086

    Abstract: germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz
    Text: BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF VPS05605 OT-343 -j100 Feb-09-2000 ACS 086 germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz

    sg transistor

    Abstract: TGF2021-08-SG rf transistor 320C TGF2021 4ghz transistor n "rf transistor"
    Text: TrìQuint SEMICONDUCTOR TGF2021-08-SG 7 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The T riQ uint TG F2021-08-SG is a discrete 7 W a tt P1dB Transistor operating at 12 volts. The device produces 7W P1dB RF output power at 4GHz. Both defense and com m ercial m arkets can take advantage


    OCR Scan     		PDF TGF2021-08-SG 20MHz TGF2021-08-SG TGF2021-08-SG. sg transistor rf transistor 320C TGF2021 4ghz transistor n "rf transistor"

    transistor SG 14

    Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
    Text: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de­ fense and commercial markets can take advantage of the


    OCR Scan     		PDF TGF2021-04-SG 20MHz TGF2021-04-SG TGF2021-04-SG. transistor SG 14 pHEMT transistor tgf2021 TGF2021-04 4GHZ TRANSISTOR