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    RF POWER TRANSISTORS 3000 Search Results

    RF POWER TRANSISTORS 3000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER TRANSISTORS 3000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1007H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1007HR5 MMRF1007HSR5 RF power transistors designed for applications operating at frequencies


    Original     		PDF MMRF1007H MMRF1007HR5 MMRF1007HSR5 MMRF1007HR5

    S-AU80

    Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
    Text: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors


    Original     		PDF 10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AU80 TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic

    S-AV17

    Abstract: 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079
    Text: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors


    Original     		PDF 10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AV17 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079

    SMD transistors

    Abstract: msa42 smd-transistor DATA BOOK MSA444 RF Power Modules msa4 smd-transistor code book MSA422 "RF Power Modules" transistor smd code 404
    Text: DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Modules and Transistors for Mobile Phones 1996 Jun 06 File under Discrete Semiconductors, SC09 Philips Semiconductors RF Power Modules and Transistors for Mobile Phones General • Acceptance tests on finished products to verify


    Original     		PDF MBB439 SMD transistors msa42 smd-transistor DATA BOOK MSA444 RF Power Modules msa4 smd-transistor code book MSA422 "RF Power Modules" transistor smd code 404

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT23S160W02S Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability


    Original     		PDF AFT23S160W02S AFT23S160W02SR3 AFT23S160W02GSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT26H250W03S_24S Rev. 0, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		PDF AFT26H250W03S AFT26H250W03SR6 AFT26H250-24SR6 44ted AFT26H250W03SR6

    ATC100B1R0CT500XT

    Abstract: Variable Gain Amplifiers freescale MRF6VP121KHR6 LDMOS push pull
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 0, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 ATC100B1R0CT500XT Variable Gain Amplifiers freescale LDMOS push pull

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20S015N Rev. 1, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.


    Original     		PDF AFT20S015N AFT20S015NR1 AFT20S015GNR1 AFT20S015NR1

    250GX-0300-55-22

    Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 250GX-0300-55-22 Arlon AN1955 MRF6VP121KHSR6

    AFT20S015N

    Abstract: AFT20S015GNR1 capacitor 475 aft20s015gn AFT20S015 ATC100B6R8CT500XT ATC800B C3225X7R1H225KT MCGPR63V477M13X26-RH capacitor 10 MF
    Text: Document Number: AFT20S015N Rev. 0, 4/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 1.5 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2690 MHz.


    Original     		PDF AFT20S015N O-270-2 AFT20S015NR1 AFT20S015NR1 AFT20S015GNR1 AFT20S015GNR1 capacitor 475 aft20s015gn AFT20S015 ATC100B6R8CT500XT ATC800B C3225X7R1H225KT MCGPR63V477M13X26-RH capacitor 10 MF

    250GX-0300-55-22

    Abstract: MCGPR63V477M13X26-RH ATC100B360JT500XT ATC100B1R0CT500X MRF6VP121KH ATC100B1R0CT500XT ATC100B3R6CT500XT ATC100B100JT500X JESD22-A114 MRF6VP121KHR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 2, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 250GX-0300-55-22 MCGPR63V477M13X26-RH ATC100B360JT500XT ATC100B1R0CT500X MRF6VP121KH ATC100B1R0CT500XT ATC100B3R6CT500XT ATC100B100JT500X JESD22-A114

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6

    Tantalum Capacitor kemet

    Abstract: HSR6 CRCW12061K00FKEA 1030 mhz 3A412 MRF6VP121KHR6 MRF6VP121KHSR6 A114 A115 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 1, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 Tantalum Capacitor kemet HSR6 CRCW12061K00FKEA 1030 mhz 3A412 MRF6VP121KHSR6 A114 A115 C101

    MMM6029

    Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
    Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular


    Original     		PDF SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications

    sc74750

    Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
    Text: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes


    Original     		PDF OT346 SC-59) sc74750 MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921

    arf446

    Abstract: No abstract text available
    Text: ARF448A ARF448B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.


    Original     		PDF ARF448A ARF448B O-247 65MHz ARF448A ARF448B ARF448A/448B arf446

    VK200-4B

    Abstract: ARF449A ARF446 ARF447 ARF449B ARF449
    Text: ARF449A ARF449B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 90W 120MHz The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.


    Original     		PDF ARF449A ARF449B O-247 120MHz ARF449A ARF449B ARF449A/449B ARF446 ARF447 VK200-4B ARF449

    ARF448A

    Abstract: ARF446 ARF447 ARF448B VK200-4B
    Text: ARF448A ARF448B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.


    Original     		PDF ARF448A ARF448B O-247 65MHz ARF448A ARF448B ARF448A/448B ARF446 ARF447 VK200-4B

    ARF448A

    Abstract: ARF446 ARF447 ARF448B VK200-4B
    Text: ARF448A ARF448B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 250W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.


    Original     		PDF ARF448A ARF448B O-247 65MHz ARF448A ARF448B ARF448A/448B ARF446 ARF447 VK200-4B

    ARF449A

    Abstract: ARF446 ARF447 ARF449B VK200-4B
    Text: ARF449A ARF449B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 150W 120MHz The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.


    Original     		PDF ARF449A ARF449B O-247 120MHz ARF449A ARF449B ARF449A/449B ARF446 ARF447 VK200-4B

    ARF446

    Abstract: ARF447 ARF448A ARF448B VK200-4B 250SEC
    Text: ARF448A ARF448B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.


    Original     		PDF ARF448A ARF448B O-247 65MHz ARF448A ARF448B ARF448A/448B ARF446 ARF447 VK200-4B 250SEC

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    2n3773 power Amplifier circuit diagrams

    Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
    Text: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete


    OCR Scan     		PDF AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


    OCR Scan     		PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756