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    RF POWER BJTS Search Results

    RF POWER BJTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER BJTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLY93a

    Abstract: No abstract text available
    Text: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. P a r t Number: BLY93A DescrIption: BJTs , Si NPN Power HP" The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR


    Original     		PDF BLY93A 30Vdc. 175MHzl BLY93a

    800w rf power amplifier circuit diagram

    Abstract: MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics
    Text: White Paper 50V RF LDMOS An ideal RF Power technology for ISM, broadcast and commercial aerospace applications Freescale Semiconductor www.freescale.com/rfpower I. INTRODUCTION RF LDMOS RF Laterally Diffused MOS , hereafter referred to as LDMOS, is the dominant device technology used in


    Original     		PDF 1990s. 2010are 50VRFLDMOSWP 800w rf power amplifier circuit diagram MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		PDF AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier

    Silicon Tuners

    Abstract: Temperature sensors TDA18272 tda18273 TDA20136 convert sata to usb cable diagram tda19997 usb to sata converter circuit diagram TDA20142 TDA19995
    Text: Application guide Flat-panel TV sets Contents Your partner for flat-panel TV sets 3 1. Power solutions 4 1.1 1.2 1.3 1.4 Primary AC/DC controllers Main power supply: secondary synchronous rectification ICs Standby power supply Discretes 2. RF reception stage


    Original     		PDF

    APT9403

    Abstract: 3000-4-CMD5005 mosfet power hf 1kw CMD5005 APT9302 RC07 768XT188 AP031HV Class B power amplifier, 13.56MHz 13.56Mhz class e power amplifier
    Text: APT9403 By: Kenneth Dierberger Simple and Inexpensive High-Efficiency Power Amplifier Using New APT MOSFETs Presented at RF Expo East November 1994 Simple and Inexpensive High-Efficiency Power Amplifier Using New APT MOSFETs Kenneth Dierberger Applications Engineering Manager


    Original     		PDF APT9403 APT9403 3000-4-CMD5005 mosfet power hf 1kw CMD5005 APT9302 RC07 768XT188 AP031HV Class B power amplifier, 13.56MHz 13.56Mhz class e power amplifier

    Untitled

    Abstract: No abstract text available
    Text: HMC614LP4 / 614LP4E v02.0608 RMS Power Detector with IPWR 71 dB, 0.1 - 3.9 GHz Typical Applications Features The HMC614LP4 E is ideal for: IPWR: Instantaneous Power, Crest Factor Measurement • Log –> Root-Mean-Square (RMS) Conversion RF Signal Wave shape & Crest Factor Independent


    Original     		PDF HMC614LP4 614LP4E

    hmc614

    Abstract: 822dB
    Text: HMC614LP4 / 614LP4E v02.0608 RMS & Peak to Average Power Detector 0.1 - 3.9 GHz Typical Applications Features The HMC614LP4 E is ideal for: IPWR Output: Instantaneous Power, Crest Factor Measurement • Log –> Root-Mean-Square (RMS) Conversion RF Signal Wave shape & Crest Factor Independent


    Original     		PDF HMC614LP4 614LP4E hmc614 822dB

    QAM-256

    Abstract: No abstract text available
    Text: HMC614LP4 / 614LP4E v00.0308 RMS Power Detector with IPWR 72 dB, DC - 3.9 GHz Typical Applications Features The HMC614LP4 E is ideal for: IPWR: Instantaneous Power, Crest Factor Measurement • Log –> Root-Mean-Square (RMS) Conversion RF Signal Wave shape & Crest Factor Independent


    Original     		PDF HMC614LP4 614LP4E QAM-256

    siliconix vmp4

    Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
    Text: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc


    Original     		PDF 99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet

    SiC-JFET

    Abstract: SiC JFET Gan on silicon transistor EPC Gan transistor Gan on silicon substrate SiC jfet cascode silicon carbide JFET normally on SiC BJT 600V GaN DMOS SiC
    Text: Gallium Nitride GaN versus Silicon Carbide (SiC) In The High Frequency (RF) and Power Switching Applications Introduction Work on wide bandgap materials and devices have been going on for many years. The properties of these materials are very exciting to designers because wide band gap devices promise


    Original     		PDF

    HBFP-0450

    Abstract: Agilent MSA-2543 JESD22-A113-B MSA-2543 MSA-2X43 qcpm HBFP-0405 HBFP-0420 HBFP0450 MSA-2743
    Text: Agilent MSA-2543 / 2643 / 2743 MMIC Amplifier Reliability Data Sheet Description The Agilent MSA-2x43 is a MMIC amplifier fabricated using the NT25 process. This process has been qualified on-wafer level and in products such as the Agilent HBFP-0405, HBFP-0420, HBFP0450 BJTs and the QCPM-9804


    Original     		PDF MSA-2543 MSA-2x43 HBFP-0405, HBFP-0420, HBFP0450 QCPM-9804 JESD22-A113-B 5988-5287EN HBFP-0450 Agilent MSA-2543 qcpm HBFP-0405 HBFP-0420 MSA-2743

    MOTOROLA SCR 1725

    Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
    Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1


    Original     		PDF DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901

    EB202

    Abstract: AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER
    Text: SG46/D REV 21 Wireless RF, IF and Transmitter Selector Guide Wireless RF, IF and Transmitter Selector Guide While Motorola is a worldwide leader in semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF


    Original     		PDF SG46/D EB202 AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER

    20000w audio amplifier circuit diagram

    Abstract: Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767
    Text: 2nd edition RF Manual product & design manual for RF small signal discretes product & design manual for RF small signal discretes 2nd edition October 2002 Page: 1 2nd edition RF Manual product & design manual for RF small signal discretes Content 1. 2. 3.


    Original     		PDF BB202, BGA6589 20000w audio amplifier circuit diagram Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767

    2SK170BL

    Abstract: 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y toshiba 2sk170bl BF1009SW philips rf manual
    Text: 4th edition RF Manual product & design manual for RF small signal discretes Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4 edition March 2004 th / discretes/documentation/rf_manual


    Original     		PDF BF1107/8 BGA2715-17 BGA6x89 2SK170BL 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y toshiba 2sk170bl BF1009SW philips rf manual

    AD8067ART-EBZ

    Abstract: sot-23 JFET
    Text: Data Sheet High Gain Bandwidth Product, Precision Fast FET Op Amp AD8067 FEATURES CONNECTION DIAGRAM TOP VIEW FET input amplifier: 0.6 pA input bias current Stable for gains ≥8 High speed 54 MHz, −3 dB bandwidth (G = +10) 640 V/µs slew rate Low noise


    Original     		PDF OT-23-5 AD8067 g067ARTZ-REEL7 AD8067ARTZ-R2 AD8067ART-EBZ OT-23 AD8067ART-EBZ sot-23 JFET

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet High Gain Bandwidth Product, Precision Fast FET Op Amp AD8067 CONNECTION DIAGRAM TOP VIEW FEATURES FET input amplifier: 0.6 pA input bias current Stable for gains ≥8 High speed 54 MHz, −3 dB bandwidth (G = +10) 640 V/µs slew rate Low noise


    Original     		PDF AD8067 OT-23-5 OT-23

    photodiode preamplifier

    Abstract: EPM605LL 1550nm photodiode 5 Ghz fast photodiode amplifier AD8009 AD8065 AD8067 AD8067ART-REEL AD8067ART-REEL7 JDS Uniphase photodiode epm
    Text: High Gain Bandwidth Product Precision Fast FET Op Amp AD8067 FEATURES • FET input amplifier: 0.6 pA input bias current • Stable for gains ≥8 • High speed • 54 MHz, –3 dB bandwidth G = +10 • 640 V/µs slew rate • Low noise • 6.6 nV/√Hz


    Original     		PDF AD8067 OT-23-5 AD8067ART-REEL AD8067ART-REEL7 AD8067ART-R2 OT-23 C03205-0-11/02 photodiode preamplifier EPM605LL 1550nm photodiode 5 Ghz fast photodiode amplifier AD8009 AD8065 AD8067 AD8067ART-REEL AD8067ART-REEL7 JDS Uniphase photodiode epm

    transimpedance amplifier 7.5 GHz

    Abstract: 105-120V ad8067art fast photodiode amplifier AD8009 AD8065 AD8067 AD8067ART-R2 AD8067ART-REEL AD8067ART-REEL7
    Text: High Gain Bandwidth Product, Precision Fast FET Op Amp AD8067 FEATURES CONNECTION DIAGRAM TOP VIEW FET input amplifier: 0.6 pA input bias current Stable for gains ≥8 High speed 54 MHz, −3 dB bandwidth (G = +10) 640 V/ s slew rate Low noise 6.6 nV/√Hz


    Original     		PDF AD8067 OT-23-5 AD8067ART-R2 AD8067ARTZ-REEL AD8067ARTZ-REEL71 AD8067ARTZ-R21 OT-23 transimpedance amplifier 7.5 GHz 105-120V ad8067art fast photodiode amplifier AD8009 AD8065 AD8067 AD8067ART-R2 AD8067ART-REEL AD8067ART-REEL7

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet High Gain Bandwidth Product, Precision Fast FET Op Amp AD8067 FEATURES CONNECTION DIAGRAM TOP VIEW FET input amplifier: 0.6 pA input bias current Stable for gains ≥8 High speed 54 MHz, −3 dB bandwidth (G = +10) 640 V/µs slew rate Low noise


    Original     		PDF OT-23-5 AD8067 g067ARTZ-REEL7 AD8067ARTZ-R2 AD8067ART-EBZ OT-23

    Untitled

    Abstract: No abstract text available
    Text: HMC714LP5 / 714LP5E v02.1208 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Features • Crest Factor Peak-to-Average Power Ratio Measurement • Envelope-to-Average Power Ratio Measurement • Dual channel and channel difference output ports • Excellent Channel Matching and Channel


    Original     		PDF HMC714LP5 714LP5E 25mm2

    Untitled

    Abstract: No abstract text available
    Text: HMC714LP5 / 714LP5E v01.1108 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Features • Crest Factor Peak-to-Average Power Ratio Measurement • Envelope-to-Average Power Ratio Measurement • Dual channel and channel difference output ports POWER DETECTORS - SMT


    Original     		PDF HMC714LP5 714LP5E 25mm2

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


    OCR Scan     		PDF