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    RF POWER AMPLIFIER 400MHZ Search Results

    RF POWER AMPLIFIER 400MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER AMPLIFIER 400MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    433MHZ amplifier 1w

    Abstract: Transistor A14 RF2126PCK RF2126 RF5187 RF Based Wireless Electronic Notice Board pc
    Text: RF2126 RF2126High Power Linear Amplifier HIGH POWER LINEAR AMPLIFIER Features „ „ „ „ „ „ Single 3V to 6.0V Supply 1.3W Output Power 12dB Gain 45% Efficiency Power Down Mode 400MHz to 2700MHz Operation RF IN 1 8 RF OUT RF IN 2 7 RF OUT PC 3 VCC 4 5 RF OUT


    Original     		PDF RF2126 RF2126High 400MHz 2700MHz RF2126 2002/95/EC DS070511 433MHZ amplifier 1w Transistor A14 RF2126PCK RF5187 RF Based Wireless Electronic Notice Board pc

    433MHZ amplifier 1w

    Abstract: Schematic/RF2126
    Text: RF2126 RF2126High Power Linear Amplifier HIGH POWER LINEAR AMPLIFIER Features „ „ „ „ „ „ Single 3V to 6.0V Supply 1.3W Output Power 12dB Gain 45% Efficiency Power Down Mode 400MHz to 2700MHz Operation RF IN 1 8 RF OUT RF IN 2 7 RF OUT PC 3 VCC 4 5 RF OUT


    Original     		PDF RF2126 RF2126High 400MHz 2700MHz RF2126 2002/95/EC DS070123 433MHZ amplifier 1w Schematic/RF2126

    Untitled

    Abstract: No abstract text available
    Text: NJM2278 300/400MHz Band 20mW Power Amplifier  GENERAL DESCRIPTION The NJM2278 is a narrow band, small signal amplifier, especially designed for use as the final RF amplifier in 300MHz / 400MHz band transmitter. The amplifier produces an output power of up to


    Original     		PDF NJM2278 300/400MHz NJM2278 300MHz 400MHz NJM2278F1 400MHz 400MHz, 30dBm

    NJM2278

    Abstract: MURATA LQW18A NJM2278F1 RF 24N GRM21 LQW18A rf power amplifier 400MHz
    Text: NJM2278 300/400MHz Band 20mW Power Amplifier ! ! PACKAGE OUTLINE GENERAL DESCRIPTION The NJM2278 is a narrow band, small signal amplifier, especially designed for use as the final RF amplifier in 300MHz / 400MHz band transmitter. The amplifier produces an output power of up to


    Original     		PDF NJM2278 300/400MHz NJM2278 300MHz 400MHz NJM2278F1 400MHz 400MHz, -j100 MURATA LQW18A NJM2278F1 RF 24N GRM21 LQW18A rf power amplifier 400MHz

    Untitled

    Abstract: No abstract text available
    Text: NJM2278 300/400MHz Band 20mW Power Amplifier ! ! PACKAGE OUTLINE GENERAL DESCRIPTION The NJM2278 is a narrow band, small signal amplifier, especially designed for use as the final RF amplifier in 300MHz / 400MHz band transmitter. The amplifier produces an output power of up to


    Original     		PDF NJM2278 300/400MHz NJM2278 300MHz 400MHz NJM2278F1 400MHz 400MHz, Gai-j100

    MAX2472

    Abstract: MAX2473 MAX2620 MAX2645 MAX2683 MAX2684 MAX2690
    Text: Maxim > App Notes > Wireless and RF Keywords: wireless local loop, WLL, transceiver, 3.5GHz, voltage controlled oscillator, VCO, LNA, power amplifier, PA, SiGe, low noise amplifier, vco buffer amplifiers Nov 14, 2001 APPLICATION NOTE 806 RF ICs for 3.5GHz WLL Transceivers


    Original     		PDF MAX2645 MAX2684 MAX2620 MAX2472 MAX2473 -2MAX2682: MAX2683: MAX2684: MAX2690: com/an806 MAX2683 MAX2690

    RF Radio frequency IC, 8pin

    Abstract: MAX2620 MAX2623 equivalent MAX2472 MAX2473 MAX2645 MAX2683 MAX2684 MAX2690 RF Transceiver 800mhz
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: wireless local loop, WLL, transceiver, 3.5GHz, voltage controlled oscillator, VCO, LNA, power amplifier, PA, SiGe, low noise amplifier, vco buffer amplifiers Nov 14, 2001 APPLICATION NOTE 806 RF ICs for 3.5GHz WLL Transceivers


    Original     		PDF MAX2645 MAX2684 MAX2620 MAX2472 MAX2473 MAX2645: MAX2660: MAX2661: MAX2663: MAX2671: RF Radio frequency IC, 8pin MAX2623 equivalent MAX2683 MAX2690 RF Transceiver 800mhz

    Untitled

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456673 1234566738 345667389 RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module


    Original     		PDF 330-400MHz RA07H3340M 400-MHz RA07H3340M

    TSH691

    Abstract: TSH691ID
    Text: TSH691  LOW COST 40MHz - 1GHz AMPLIFIER . . . 28dB GAIN @ 3V @ 450MHz +13.5dBm OUTPUT POWER P1dB BIAS PIN FOR OUTPUT POWER & AMPLIFIER DISABLE 50Ω INPUT/OUTPUT MATCHING D SO8 (Plastic Micropackage) DESCRIPTION TSH691 is a low cost RF amplifier consisted of 2


    Original     		PDF TSH691 40MHz 450MHz TSH691 TSH691ID TSH691ID

    RA07H3340M-101

    Abstract: marking GG RA*3340 RA07H3340M
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340 RA07H3340M 07H3340M RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module


    Original     		PDF RA07H3340M 07H3340 330-400MHz RA07H3340M 400-MHz RA07H3340M-101 marking GG RA*3340

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1014 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F1014

    F1014

    Abstract: No abstract text available
    Text: polyfet rf devices F1014 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F1014 F1014

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F1012

    F1012

    Abstract: No abstract text available
    Text: polyfet rf devices F1012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F1012 F1012

    F1015

    Abstract: 100WATTS
    Text: polyfet rf devices F1015 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F1015 F1015 100WATTS

    F1208

    Abstract: No abstract text available
    Text: polyfet rf devices F1208 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F1208 F1208

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1015 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F1015

    Untitled

    Abstract: No abstract text available
    Text: RF POWER AMPLIFIER • Class A Linear Solid-State Amplifier ■ Broadband Frequency :9kHz～400MHz ■ Output Power :200W min. @1dB Comp. R&K-A009K401-5353R SPECIFICATIONS ＠＋25℃ Frequency Range Small Signal Gain Gain Flatness Output Power Operation Mode


    Original     		PDF 400MHz K-A009K401-5353R 400MHz A009K401-5353R AC200V 480mmà 177mm 10kHz 100kHz

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices L88208 General Description PATENTED GOLD METALIZED SILICON GATE RF POWER MOSFET Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM,


    Original     		PDF L88208

    AN721

    Abstract: MRF134 RF POWER MOSFET AN211A AN215A MRF137 "RF MOSFET"
    Text: MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V M/A-COM Products Released - Rev. 05202009 Product Image Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. N–Channel enhancement mode •


    Original     		PDF MRF134 400MHz, AN721 MRF134 RF POWER MOSFET AN211A AN215A MRF137 "RF MOSFET"

    Untitled

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to


    Original     		PDF 330-400MHz RA07M3340M 400-MHz RA07M3340M

    GRM1882C1H5R0CZ01D

    Abstract: GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h RD02MUS1B GRM1882C1H150JA01D RPC05-0R0
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-111 Date : 18th Aug. 2010 Prepared : K.Osaki, Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V


    Original     		PDF AN-UHF-111 RD00HVS1 RD02MUS1B 400-470MHz, 470MHz. RD00HVS1: RD02MUS1B: 103AJ-G" 400MHz 470MHz, GRM1882C1H5R0CZ01D GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h GRM1882C1H150JA01D RPC05-0R0

    RA30H3340M

    Abstract: No abstract text available
    Text: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA30H3340M Silicon MOS FET Power Amplifier, 330-400MHz 30W MOBILE RADIO PIN: 1 Pin :RF INPUT 2 V gg :GATE BIAS SUPPLY 3 V dd :DRAIN BIAS SUPPLY 4 Po :RF O U TPUT


    OCR Scan     		PDF RA30H3340M 330-400MHz 25deg 50ohm RA30H3340M

    350-400MHZ

    Abstract: 21202 M68732SLA
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE M68732SLA Silicon MOS FET Power Amplifier, 350-400MHz 7W FM PORTABLE OUTLINE DRAWING Dimensions in mm PIN: D Pin :RF INPUT V gg :GATE BIAS SUPPLY ( D V dd :DRAIN BIAS SUPPLY


    OCR Scan     		PDF M68732SLA 350-400MHz 350-400MHz, 50ohms, 21202 M68732SLA