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    RF POWER 2SC1972 Search Results

    RF POWER 2SC1972 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER 2SC1972 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1972

    Abstract: transistor 2sc1972 ASI 2sc1972
    Text: 2SC1972 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • • • PACKAGE STYLE TO-220AB COMMON EMITTER Replaces Original 2SC1972 in Most Applications


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    PDF 2SC1972 2SC1972 O-220AB O-220CE transistor 2sc1972 ASI 2sc1972

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


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    PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    PT8809

    Abstract: trw rf 2SC1964 BUX51 dts411 KT921A 2U 37 diode BUX49 KT936A 40340
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 NA71U NA71W KT921 A KT921B 2N5785 2N5784 BUX49 BUX49 NthAmerSemi SemiconTech SemiconTech SemiconTech SemiconTech SemiconTech SemiconTech Hitachi Ltd Hitachi Ltd Hitachi Ltd Semelab NthAmerSemi Matsushita


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    PDF SPC411 STS411 PTC403 PTC403P PTC409 PTC409P PTC402 PTC402P SPC402 PTC423 PT8809 trw rf 2SC1964 BUX51 dts411 KT921A 2U 37 diode BUX49 KT936A 40340

    SDT710

    Abstract: DTS723 DTS708 STI660 DTS-714 DTS-723 PT8810 IR708 DTS411 dts710
    Text: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max V BR CEO (A) Of) PD ICBO Max hFE »T ON) Min (Hz) (A) '<CE)Mt Max (s) Max (Ohms) Top«r Max Package Style CO Devices 20 Watts or More, (Cont'd) I. . . .5 10 15 20 2SC3506 2SC3533


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    PDF 2SC3506 2SC3533 2SC3458 2SC3152 2SC3550 IR801 SDT704 MJH16032 MJH16034 SDT710 DTS723 DTS708 STI660 DTS-714 DTS-723 PT8810 IR708 DTS411 dts710

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


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    PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    2sc1972

    Abstract: transistor 2sc1972 TO220 RF POWER TRANSISTOR NPN 18W 12 transistor RF POWER TRANSISTOR
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ Dimensions signed for RF power amplifiers on V H F band mobile radio applications. 9.1 ± 0 .7 03.6 ± 0 .2


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    PDF 2SC1972 175MHz O-220 175MHz. 2SC1972 175MHz transistor 2sc1972 TO220 RF POWER TRANSISTOR NPN 18W 12 transistor RF POWER TRANSISTOR

    transistor 2sc1972

    Abstract: 2sc1972 2SC1972 equivalent J3 transistor RF POWER TRANSISTOR NPN vhf
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on VHF band mobile radio applications. Dimensions in mm 03.6 ± 0.2


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    PDF 2SC1972 2SC1972 175MHz O-220 175MHz. transistor 2sc1972 2SC1972 equivalent J3 transistor RF POWER TRANSISTOR NPN vhf

    2SC1972

    Abstract: transistor 2sc1972 2SC1972 equivalent RF POWER TRANSISTOR NPN vhf
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR TY P E DESCRIPTION O U TLIN E DRAW ING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ signed fo r RF power am plifiers on V H F band m obile radio applications. 9.1 ± 0 .7 03.6 Dimensions in mm


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    PDF 2SC1972 175MHz O-220 175MHz. 175MHz 2SC1972 transistor 2sc1972 2SC1972 equivalent RF POWER TRANSISTOR NPN vhf

    2SC1972

    Abstract: 2SC1972 equivalent
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAW ING 2 S C 1 9 7 2 is a silicon N P N epitaxial planar type transistor de­ signed for RF power amplifiers on V H F Dimensions i band m obile radio applications. 03.6 ± 0.2


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    PDF 2SC1972 2SC1972 2SC1972 equivalent

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711