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    RF NPN POWER TRANSISTOR 3 GHZ 200 WATTS Search Results

    RF NPN POWER TRANSISTOR 3 GHZ 200 WATTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF NPN POWER TRANSISTOR 3 GHZ 200 WATTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ
    Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA • 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB typ @ 200 MHz TO-39 DESCRIPTION:


    Original     		PDF 2N5109 To-39 MRF545 MRF544 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ

    package 20223

    Abstract: No abstract text available
    Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is


    Original     		PDF G-200 1-877-GOLDMOS 1301-PTB package 20223

    ericsson 20151

    Abstract: 9434 1198E bav 17 diode
    Text: e PTB 20151 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended


    Original     		PDF ATC-100 G-200 1-877-GOLDMOS 1301-PTB ericsson 20151 9434 1198E bav 17 diode

    PTB 20245

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
    Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is


    Original     		PDF G-200 1-877-GOLDMOS 1301-PTB PTB 20245 RF NPN POWER TRANSISTOR C 10-12 GHZ

    Johanson Piston Trimmer

    Abstract: G200 RF TRANSISTOR 2GHZ
    Text: e PTB 20125 100 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a


    Original     		PDF 1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer G200 RF TRANSISTOR 2GHZ

    TRANSISTOR 618

    Abstract: J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS
    Text: Advanced Datasheet Rev 17-06-2005 MAPRST1030-1KS Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10µs Pulse Width, 1% Duty Cycle Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration


    Original     		PDF MAPRST1030-1KS TRANSISTOR 618 J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    3 w RF POWER TRANSISTOR 2.7 ghz

    Abstract: radar amplifier s-band 2.7 2.9 GHZ 300 watts amplifier s-band 100 watts transistor s-band 2.7Ghz rc circuit PHA2731-190M 190-W
    Text: PHA2731-190M Radar Pulsed Power Amplifier—190 Watts 2.7—3.1 GHz, 200µs Pulse, 10% Duty Outline Drawing1 Features • • • • • • Input and Output matched to 50Ω RC bias circuit included Dual NPN Silicon class C power transistors Soft substrate εr = 10.5


    Original     		PDF PHA2731-190M Amplifier--190 PHA2731-190M 3 w RF POWER TRANSISTOR 2.7 ghz radar amplifier s-band 2.7 2.9 GHZ 300 watts amplifier s-band 100 watts transistor s-band 2.7Ghz rc circuit 190-W

    9434

    Abstract: transistor 1877 ADC 50 Ghz p 477 RF 1501 RF NPN POWER TRANSISTOR 3 GHZ 200 watts
    Text: e PTB 20074 14 watts, 1.477–1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB 9434 transistor 1877 ADC 50 Ghz p 477 RF 1501 RF NPN POWER TRANSISTOR 3 GHZ 200 watts

    RF NPN POWER TRANSISTOR 3 GHZ 200 watts

    Abstract: No abstract text available
    Text: e PTB 20079 10 Watts, 1.6–1.7 GHz INMARSAT RF Power Transistor Description The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10


    Original     		PDF 1-877-GOLDMOS 1301-PTB RF NPN POWER TRANSISTOR 3 GHZ 200 watts

    20191 ic

    Abstract: No abstract text available
    Text: e PTB 20191 12 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.


    Original     		PDF 1-877-GOLDMOS 1301-PTB 20191 ic

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    Inmarsat

    Abstract: No abstract text available
    Text: e PTB 20078 2.5 Watts, 1525–1660 MHz INMARSAT RF Power Transistor Description The 20078 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB Inmarsat

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


    Original     		PDF PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104

    ericsson 20077

    Abstract: InMarSat power
    Text: e PTB 20077 0.7 Watts, 1525–1660 MHz INMARSAT RF Power Transistor Description The 20077 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 0.7 watt minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB ericsson 20077 InMarSat power

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20245 35 Watts, 2.1-2.2 GHz PCN/PCS Power Transistor Description The 20245 is a class AB, NPN com mon em itter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minim um output power for PEP applications, it is


    OCR Scan     		PDF ATC-100 G-200 BCP56 RF NPN POWER TRANSISTOR C 10-12 GHZ

    dlc10

    Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts package 20223 si1206 r410a
    Text: ERICSSON ^ PTB 20151 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter HF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended


    OCR Scan     		PDF ATC-100 G-200 BCP56 dlc10 RF NPN POWER TRANSISTOR 3 GHZ 200 watts package 20223 si1206 r410a

    ericsson 20151

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20151 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across 1.8 to 2.0 GHz frequency band. Rated at 45 watts minimum output power for PEP applications, it is


    OCR Scan     		PDF ATC-100 G-200 ericsson 20151

    R2C TRANSISTOR

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended tor 26 Vdc class AB operation from 1,8 to 2.0 GHz. Rated at 100 w atts PEP minimum output power, it is specifically intended for operation as a


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20191 12 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.


    OCR Scan     		PDF

    RF NPN POWER TRANSISTOR 3 GHZ 200 watts

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended


    OCR Scan     		PDF

    43 JO smd

    Abstract: 1c smd transistor transistor bd135 chip PCN resistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The M RF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold m etallizations and offers a high degree of reliability and


    OCR Scan     		PDF MRF6402 MRF6402 1N4148 BD135 43 JO smd 1c smd transistor transistor bd135 chip PCN resistor

    MRF6402

    Abstract: transistor SMD J9 transistor J9 TRANSISTOR Bd135 diode 1n4148
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6402 The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and


    OCR Scan     		PDF MRF6402 MRF6402 1N4148 BD135 transistor SMD J9 transistor J9 TRANSISTOR Bd135 diode 1n4148