RF NPN POWER TRANSISTOR 2 GHZ Search Results

RF NPN POWER TRANSISTOR 2 GHZ Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF NPN POWER TRANSISTOR 2 GHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NPN planar RF transistor Abstract: BFG10 SOT143 C9 XN-71 transistor K 2937 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor	Original	PDF	BFG10; BFG10/X BFG10 NPN planar RF transistor BFG10 SOT143 C9 XN-71 transistor K 2937
NESG270034 Abstract: ic nec 2501 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ 2012 NEC Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz	Original	PDF	NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ NESG270034 ic nec 2501 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ 2012 NEC
ic nec 2501 Abstract: NESG270034 NESG270034-T1 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1-AZ IC MARKING 1005 5 pin nec microwave marking NEC rf transistor Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz	Original	PDF	NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ ic nec 2501 NESG270034 NESG270034-T1 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1-AZ IC MARKING 1005 5 pin nec microwave marking NEC rf transistor
2SC5509 Abstract: 2SC5509-T2 2V330 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz	Original	PDF	2SC5509 2SC5509-T2 2SC5509 2SC5509-T2 2V330
NEC 1357 Abstract: 2SC5509 2SC5509-T2 C10535E 487 4PIN Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz	Original	PDF	2SC5509 2SC5509-T2 NEC 1357 2SC5509 2SC5509-T2 C10535E 487 4PIN
transistor NEC B 617 Abstract: nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 • 4-pin power minimold package with improved gain from the 2SC3357	Original	PDF	2SC5336 2SC3357 2SC5336-T1 transistor NEC B 617 nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617
BFR705L3RH Abstract: No abstract text available Text: BFR705L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor for low current operation 3 • Ideal for low power consumption LNA design 1 2 • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more	Original	PDF	BFR705L3RH BFR705L3RH
Germanium power Abstract: BFR705L3RH TP5045 Text: BFR705L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor for low current operation 3 • Ideal for low power consumption LNA design 1 2 • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more	Original	PDF	BFR705L3RH Germanium power BFR705L3RH TP5045
Transistor BFw 92 Abstract: TRANSISTOR BFW 11 BFW92 transistor bfw 88 BFw 94 Text: BFW 92 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92 Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings	Original	PDF	BFW92 D-74025 Transistor BFw 92 TRANSISTOR BFW 11 transistor bfw 88 BFw 94
BFP93A Abstract: BFP93AW Text: BFP93A/BFP93AW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1	Original	PDF	BFP93A/BFP93AW BFP93A BFP93AW D-74025 20-Jan-99
BFG93A Abstract: marking r8 Text: BFG93A Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 13 579	Original	PDF	BFG93A BFG93A 50mprove D-74025 11-Nov-99 marking r8
382 1500 Abstract: BFP93A BFP93AW transistor j02 527 Text: BFP93A / BFP93AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 2 1 • High power gain • Low noise figure • High transition frequency SOT-143 3 4 Applications RF amplifier up to GHz range. 2 1 SOT-343 Mechanical Data Typ: BFP93A	Original	PDF	BFP93A BFP93AW OT-143 OT-343 BFP93A OT-143 OT-343 D-74025 03-Sep-04 382 1500 BFP93AW transistor j02 527
BFR90 transistor Abstract: BFR90 Text: BFR90 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039	Original	PDF	BFR90 D-74025 24-Aug-04 BFR90 transistor BFR90
transistor 81 110 w 63 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •	OCR Scan	PDF	MRF581 transistor 81 110 w 63

bc337 TRANSISTOR equivalent Abstract: TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103 Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT10 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin, dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier	OCR Scan	PDF	BLT10 OT103 MSB037 OT103. 711002b bc337 TRANSISTOR equivalent TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20157 20 Watts, 1.35-1.85 GHz RF Power Transistor Description The 20157 is an NPN com mon base RF power transistor intended for 2 2 -2 6 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP	OCR Scan	PDF
e20231 Abstract: No abstract text available Text: ERICSSON í E 20231* 18 Watts, 2 . 1 - 2 . 2 GHz Cellular Radio RF Po we r Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 w atts minimum output power in class AB and 8 watts minimum output power	OCR Scan	PDF
npn C 1740 Abstract: transistor bf 422 NPN equivalent of 2222 NPN rf transistor mar 8 2222 032 NPN planar RF transistor BD228 BLT11 NPN power transistor spice SOT103 Text: Philips Semiconductors Product specification NPN 2 G H z RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier	OCR Scan	PDF	BLT11 7110flEb 0CH3034 npn C 1740 transistor bf 422 NPN equivalent of 2222 NPN rf transistor mar 8 2222 032 NPN planar RF transistor BD228 BLT11 NPN power transistor spice SOT103
bf433 Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68 Text: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.	OCR Scan	PDF	MRF681 bf433 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
Untitled Abstract: No abstract text available Text: bbSBTBl 003EQA7 Ell Philips Semiconductors Product specification APX BFT24 NPN 2 GHz w ideband transistor N ANER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily Intended for use in RF low power amplifiers, such as in	OCR Scan	PDF	003EQA7 BFT24
BFT25 Abstract: No abstract text available Text: Philips Semiconductor! •§ 7 1 1 D fl 5 b 0 0 bT3 Eb 4T3 H PHI N Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 e PINNING 2 NPN transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF low power amplifiers, such as in	OCR Scan	PDF	711002b BFT25
5 GHZ TRANSISTOR 1W Abstract: 245 transistor 181Z PTB20050 Text: ERICSSON S PTB 20050 2 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description Key Features • • • • • The 20050 is a class A, NPN, common emitter RF Power Transistor intended for 24.5 VDC operation across the 14651513 MHz frequency band. It is rated at 2 Watts minimum	OCR Scan	PDF	270mA 5 GHZ TRANSISTOR 1W 245 transistor 181Z PTB20050
Untitled Abstract: No abstract text available Text: Philips Semiconductors bbS3R31 0D321b2 fl25 • APX Preliminary specification 2 GHz RF power transistor BLT11 — N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation	OCR Scan	PDF	bbS3R31 0D321b2 BLT11 OT103 BLT11
Untitled Abstract: No abstract text available Text: bbsa^ai DD2S3bD b=i5 N AUER PHILIPS/DISCRETE NPN 2 GHz wideband transistor Philips Semiconductors DESCRIPTION • APX_ Product specification b?E D £ BFT25 PINNING NPN transistor in a plastic SOT23 envelope. PIN It Is primarily intended for use in RF low power amplifiers, such as in	OCR Scan	PDF	BFT25

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RF NPN POWER TRANSISTOR 2 GHZ Search Results

RF NPN POWER TRANSISTOR 2 GHZ Result Highlights (5)

RF NPN POWER TRANSISTOR 2 GHZ Datasheets Context Search

NPN planar RF transistor

NESG270034

ic nec 2501

2SC5509

NEC 1357

transistor NEC B 617

BFR705L3RH

Germanium power

Transistor BFw 92

BFP93A

BFG93A

382 1500

BFR90 transistor

transistor 81 110 w 63

bc337 TRANSISTOR equivalent

Untitled

e20231

npn C 1740

bf433

Untitled

BFT25

5 GHZ TRANSISTOR 1W

Untitled

Untitled