preamp with bass treble circuit diagrams
Abstract: pc preamp with bass treble circuit diagrams BEST BASS TREBLE CIRCUIT w/ pcb layout bass control in stereo amplifier analog mic preamp Stereo Tone Control BEST BASS TREBLE CIRCUIT E1105 i2c tone volume stereo volume tone
Text: LM4832 Digitally Controlled Tone and Volume Circuit with Stereo Audio Power Amplifier, Microphone Preamp Stage and National 3D Sound General Description The LM4832 is a monolithic integrated circuit that provides volume and tone bass and treble controls as well as a stereo audio power amplifier capable of producing 250 mW
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LM4832
LM4832
an959
preamp with bass treble circuit diagrams
pc preamp with bass treble circuit diagrams
BEST BASS TREBLE CIRCUIT w/ pcb layout
bass control in stereo amplifier
analog mic preamp
Stereo Tone Control
BEST BASS TREBLE CIRCUIT
E1105
i2c tone volume
stereo volume tone
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lm4832n
Abstract: BEST BASS TREBLE CIRCUIT pcb layout microphone preamp AN-450 LM4832 M28B N28B 3D Effect Audio Processor IC DS100014-2 JJ-0357-3RT
Text: LM4832 Digitally Controlled Tone and Volume Circuit with Stereo Audio Power Amplifier, Microphone Preamp Stage and National 3D Sound General Description The LM4832 is a monolithic integrated circuit that provides volume and tone bass and treble controls as well as a stereo audio power amplifier capable of producing 250 mW
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LM4832
LM4832
an959
lm4832n
BEST BASS TREBLE CIRCUIT pcb layout
microphone preamp
AN-450
M28B
N28B
3D Effect Audio Processor IC
DS100014-2
JJ-0357-3RT
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LM4832M
Abstract: microphone preamp LM4832 LM4832N M28B N28B AN-450 ic type tone control mono type with volume bass i2c tone volume dip E1105
Text: LM4832 Digitally Controlled Tone and Volume Circuit with Stereo Audio Power Amplifier, Microphone Preamp Stage and National 3D Sound General Description Key Specifications The LM4832 is a monolithic integrated circuit that provides volume and tone bass and treble controls as well as a stereo audio power amplifier capable of producing 250 mW
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LM4832
LM4832
consum24
LM4832M
microphone preamp
LM4832N
M28B
N28B
AN-450
ic type tone control mono type with volume bass
i2c tone volume dip
E1105
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capacitor 100uF 50V
Abstract: resistor 220 ohm resistor qbk PTF 10154 capacitor 10uf DIGIKEY
Text: PTF 10154 85 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10154 is an internally matched 85–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43% efficiency with 11 dB gain. Nitride surface
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0805CS-080
1-877-GOLDMOS
1522-PTF
capacitor 100uF 50V
resistor 220 ohm
resistor qbk
PTF 10154
capacitor 10uf DIGIKEY
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Untitled
Abstract: No abstract text available
Text: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6
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AFL000-00E
AFL000-10E
AFL001-10E
AFL002-10E
AFL005-10E
AFL020-00E
AFL030-00E
AFL100-00E
AFL100-10E
AFL200-00E
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AFL Marking
Abstract: MARKING CODE AFL MSOP8 Part marking SUFFIX AFL200-00E AFL002-10E
Text: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6
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AFL000-00E
AFL000-10E
AFL001-10E
AFL002-10E
AFL005-10E
AFL020-00E
AFL030-00E
AFL100-00E
AFL100-10E
AFL200-00E
AFL Marking
MARKING CODE AFL
MSOP8 Part marking
SUFFIX
AFL200-00E
AFL002-10E
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ericsson 10007
Abstract: ca 3161 e IC
Text: PTF 10007 GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization
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PC56106
1-877-GOLDMOS
1522-PTF
ericsson 10007
ca 3161 e IC
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Untitled
Abstract: No abstract text available
Text: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6
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MARKING CODE AFL
Abstract: MSOP8 Part marking
Text: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6
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OZ 960
Abstract: cgs resistor
Text: PTF 10193 GOLDMOS Field Effect Transistor 12 Watts, 860–960 MHz Description The PTF 10193 is an internally matched, 12–watt GOLDMOS FET intended for GSM, CDMA and TDMA amplifier applications from 860 to 960 MHz. This device operates at 60% efficiency with 18 dB typical
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P4525
P5182
1-877-GOLDMOS
OZ 960
cgs resistor
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2M84G
Abstract: No abstract text available
Text: SKM 195GB066D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 KL M8 E8 .O 2 JXL M8 E8SZ .03+ 2 KLM8B * 5(+ %41(/<-+( +=(0-@-(G CQQ 7 KCL F .0 2 YQ M8 KQQ F [QQ F ¥ KQ 7 .O 2 JLQ M8 C `+ .0 2 KL M8 KQQ F .0 2 YQ M8 J]Q F [QQ F J[QQ F KQQ F W [Q NNN b JXL
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195GB066D
SKM195GB066D
2M84G
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capacitor siemens 4700 35
Abstract: No abstract text available
Text: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of
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1-877-GOLDMOS
1301-PTF10122
capacitor siemens 4700 35
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resistor qbk
Abstract: No abstract text available
Text: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11
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1-877-GOLDMOS
1301-PTF10122
resistor qbk
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OZ 960
Abstract: G200
Text: PTF 10160 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability.
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1-877-GOLDMOS
1522-PTF
OZ 960
G200
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Untitled
Abstract: No abstract text available
Text: PTF 10107 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The 10107 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts power output. Nitride surface passivation and gold
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1-877-GOLDMOS
1301-PTF
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G200
Abstract: resistor 220 ohm
Text: PTF 10107 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization
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P5182-ND
LL2012-F2N7K
1-877-GOLDMOS
1522-PTF
G200
resistor 220 ohm
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JX - 638
Abstract: No abstract text available
Text: PTF 10138 60 Watts, 960 MHz GOLDMOS Field Effect Transistor Description The PTF 10138 is a GOLDMOS™ FET intended for amplifier applications to 960 MHz. This 60–watt device operates at 48% efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold
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1-877-GOLDMOS
1301-PTF
JX - 638
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G200
Abstract: P4525-ND cgs resistor c7
Text: GOLDMOS PTF 10107 Field Effect Transistor 5 Watts, 2.0 GHz Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
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LL2012-F2N7K
1-877-GOLDMOS
1522-PTF
G200
P4525-ND
cgs resistor c7
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JMC5701
Abstract: GPS-101-2
Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold
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PCS6106
1-877-GOLDMOS
1522-PTF
JMC5701
GPS-101-2
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500 watts amplifier schematic diagram
Abstract: G200 gsm amplifier ghz 100 watts amplifier circuit diagram E7020
Text: GOLDMOS PTF 10138 Field Effect Transistor 60 Watts, 1.0 GHz Description The PTF 10138 is a 60–watt GOLDMOS FET intended for CDMA, TDMA, or GSM amplifier applications from 860-960 MHz. It operates at 55% efficiency with 12.5 dB gain. Nitride surface passivation and
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P4525-ND
P5182-ND
1-877-GOLDMOS
1522-PTF
500 watts amplifier schematic diagram
G200
gsm amplifier
ghz 100 watts amplifier circuit diagram
E7020
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PTF 10138
Abstract: G200
Text: PTF 10138 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10138 is a 60–watt GOLDMOS FET intended for amplifier applications to 860-960 MHz. It operates at 48% efficiency with 12.5 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
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P4525-ND
P5182-ND
1-877-GOLDMOS
1522-PTF
PTF 10138
G200
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G200
Abstract: 500 watts amplifier schematic diagram gsm amplifier Ericsson
Text: PTF 10138 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10138 is a 60–watt GOLDMOS FET intended for CDMA, TDMA, or GSM amplifier applications from 860-960 MHz. It operates at 55% efficiency with 12.5 dB gain. Nitride surface passivation and
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P4525-ND
P5182-ND
1-877-GOLDMOS
1522-PTF
G200
500 watts amplifier schematic diagram
gsm amplifier
Ericsson
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diode SKE 1/10
Abstract: G200 0509L OZ 960 S
Text: PTF 10020 125 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 10020 is an internally matched, 125–watt GOLDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. This device operates with 55% efficiency and 12.5 dB gain.
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1301-rpm
1-877-GOLDMOS
1522-PTF
diode SKE 1/10
G200
0509L
OZ 960 S
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capacitor 0,1 mF 50V
Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram
Text: PTF 10137 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization
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P4525-ND
P5182-ND
1-877-GOLDMOS
1301-PTF
capacitor 0,1 mF 50V
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
G200
2000 watts power amplifier circuit diagram
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