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    RENESAS LOW VOLTAGE MOSFET Search Results

    RENESAS LOW VOLTAGE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    RENESAS LOW VOLTAGE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


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    Hdd spindle motor

    Abstract: HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA
    Text: April 2010 Renesas Electronics Power MOSFETs for Small Motor Drive Features Low ON resistance Low voltage drive 4V Small package Built-in high-speed diode Merits Low loss, High efficiency Available direct drive from logic IC and reduction of the number of any parts


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    O-220CFM H5N5004PL H5N5005PL RJL5012DPP O-220FN RJL5013DPP RJL5014DPP RJL5014DPK Hdd spindle motor HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA PDF

    jrc 2100 audio amplifier

    Abstract: HA13166 HA17324A LM324 HA13165 M51995AFP M51995P ha13168 HA17555 equivalent HA13164A IC ha17555
    Text: 2004.4 Management Linear ICs/ Renesas Standard Linear ICs Power Multi-Purpose Linear ICs Status List Topic 1—Series of Small Multi-Purpose Linear ICs for Low-Voltage Operation •··················································2


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    M62249FP HA17431UPA M5295AP M51945AL M51945BL M51952AL M51952BL M51955AL M51955BL M51958AL jrc 2100 audio amplifier HA13166 HA17324A LM324 HA13165 M51995AFP M51995P ha13168 HA17555 equivalent HA13164A IC ha17555 PDF

    R2A25107KFP

    Abstract: detailed vfd circuit diagram for motor three phase VFD connection to 3 phase motor vfd ac motor detailed circuit diagram pwm INVERTER 3 phase 400 hz vfd
    Text: Preliminary Data Sheet R2A25107KFP Intelligent Power Device for MOSFET Pre-drive R07DS0689EJ0100 Rev.1.00 Mar 22, 2012 Description The R2A25107KFP device is an intelligent power device to pre-drive the FET inverter of a 3-phase blushless motor. This device contains three sets of pre-driver that are applicable to both 12-V and 24-V battery systems. This IC also


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    R2A25107KFP R07DS0689EJ0100 R2A25107KFP detailed vfd circuit diagram for motor three phase VFD connection to 3 phase motor vfd ac motor detailed circuit diagram pwm INVERTER 3 phase 400 hz vfd PDF

    RAA23

    Abstract: D2417 RAA230409 5 pin LDO IC - LP top mark RAA230408 RAA230401
    Text: Preliminary Datasheet RAA23040x Series [Under Development] R18DS0004EJ0101 Rev.1.01 Oct 18, 2012 3-ch Step-Down Switching Regulator + 1-ch LDO Description The RAA23040x is a power supply IC that has 3-ch step-down Switching Regulator containing power MOSFETs and


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    RAA23040x R18DS0004EJ0101 RAA23 D2417 RAA230409 5 pin LDO IC - LP top mark RAA230408 RAA230401 PDF

    RAA230214

    Abstract: RAA230215 dstb 1000 25VIREG RAA23
    Text: Preliminary Datasheet RAA23021x Series [Under Development] R18DS0003EJ0001 1-ch Step-Down Switching Regulator + 1-ch LDO Rev.0.01 Oct 18, 2012 Description The RAA23021x is a power supply IC that has 1-ch step-down Switching Regulator containing power MOSFETs and


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    RAA23021x R18DS0003EJ0001 RAA230214 RAA230215 dstb 1000 25VIREG RAA23 PDF

    Untitled

    Abstract: No abstract text available
    Text: PreliminaryData Sheet NE5820M53 R09DS0005EJ0200 Rev.2.00 May 20, 2011 P-channel MOS Field Effect Transistor for Impedance Converter of Microphone DESCRIPTION The NE5820M53 is a P-channel silicon MOSFET designed for use as impedance converter for microphone.


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    NE5820M53 R09DS0005EJ0200 NE5820M53 R9044 PDF

    infrared application renesas

    Abstract: HS350 marking B8 R09DS0005EJ0100
    Text: PreliminaryData Sheet NE5820M53 R09DS0005EJ0100 Rev.1.00 Jul 9, 2010 P-channel MOS Field Effect Transistor for Impedance Converter of Microphone DESCRIPTION The NE5820M53 is a P-channel silicon MOSFET designed for use as impedance converter for microphone.


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    NE5820M53 R09DS0005EJ0100 NE5820M53 infrared application renesas HS350 marking B8 R09DS0005EJ0100 PDF

    SPM4012

    Abstract: FDSD0420
    Text: Preliminary Datasheet RAA207700GBM/7701GBM/7702GBM R07DS0891EJ0001 Rev.0.01 Nov 29, 2012 Synchronous Buck Regulator with Internal Power MOSFETs Description The RAA207700GBM is monolithic synchronous buck regulator with power MOSFETs in extremely small package.


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    RAA207700GBM/7701GBM/7702GBM RAA207700GBM R07DS0891EJ0001 SPM4012 FDSD0420 PDF

    PA2660T1R

    Abstract: No abstract text available
    Text: Data Sheet PA2660T1R R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 DUAL N-CHANNEL MOSFET 20 V, 4.0 A, 42 mΩ Description The μPA2660T1R is Dual N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


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    PA2660T1R PA2660T1R R07DS0999EJ0100 6pinHUSON2020 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RAA207700GBM/7701GBM/7702GBM R07DS0891EJ0051 Rev.0.51 Mar 04, 2013 Synchronous Buck Regulator with Internal Power MOSFETs Description The RAA207700GBM is monolithic synchronous buck regulator with power MOSFETs in extremely small package.


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    RAA207700GBM/7701GBM/7702GBM R07DS0891EJ0051 RAA207700GBM PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet RAA23040x 3-ch Step-Down Switching Regulator + 1-ch LDO R18DS0004EJ0102 Rev.1.02 Jul.09, 2013 Description The RAA23040x is a power supply IC that has 3-ch step-down Switching Regulator containing power MOSFETs and 1-ch LDO. Features • Switching Regulator ch1, ch3, ch4


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    RAA23040x R18DS0004EJ0102 RAA23040x PDF

    M65817AFP

    Abstract: Low Voltage Detector M61556FP M65881AFP SSOP42-P-450-0 M61557FP
    Text: M61556FP 100 W 1-Channel Amplifier Predriver REJ03F0089-0100Z Rev.1.0 Sep.19.2003 Description The M61556FP is a predriver IC developed for use as the output driver of a digital audio power amplifier. It can be combined with an N-channel MOSFET to create a 100 W, 1-channel 8Ω load digital amplifier. (The 200 W version,


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    M61556FP REJ03F0089-0100Z M61556FP M61557FP, M61556FP. M65817AFP Low Voltage Detector M65881AFP SSOP42-P-450-0 M61557FP PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RAA207700GBM/7701GBM/7702GBM R07DS0891EJ0050 Rev.0.50 Feb 06, 2012 Synchronous Buck Regulator with Internal Power MOSFETs Description The RAA207700GBM is monolithic synchronous buck regulator with power MOSFETs in extremely small package.


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    RAA207700GBM/7701GBM/7702GBM RAA207700GBM R07DS0891EJ0050 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2631T1R R07DS0991EJ0101 Rev.1.01 Sep 04, 2013 P-CHANNEL MOSFET –20 V, –6.0 A, 32 mΩ Description The μPA2631T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


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    PA2631T1R R07DS0991EJ0101 PA2631T1R 6pinHUSON2020 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PA2561T1H R07DS0006EJ0100 Rev.1.00 Jul 08, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2561 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments.


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    PA2561T1H R07DS0006EJ0100 PA2561 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet H7N1004FM R07DS0209EJ0300 Rev.3.00 Feb 23, 2012 Silicon N-Channel MOSFET High-Speed Power Switching Features •    Low on-resistance RDS on = 25 m typ. Low drive current Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0003AD-A


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    H7N1004FM R07DS0209EJ0300 PRSS0003AD-A O-220FM EAR9044 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet H7N1004FM R07DS0209EJ0200 Previous: REJ03G0073-0100 Rev.2.00 Dec 02, 2010 Silicon N-Channel MOSFET High-Speed Power Switching Features •    Low on-resistance RDS(on) = 25 m typ. Low drive current Available for 4.5 V gate drive


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    H7N1004FM R07DS0209EJ0200 REJ03G0073-0100) PRSS0003AD-A O-220FM PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet H7N1004FM R07DS0209EJ0300 Rev.3.00 Feb 23, 2012 Silicon N-Channel MOSFET High-Speed Power Switching Features •    Low on-resistance RDS on = 25 m typ. Low drive current Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0003AD-A


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    H7N1004FM R07DS0209EJ0300 PRSS0003AD-A O-220FM PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HAT1093C R07DS0605EJ0600 Previous: REJ03G1230-0500 Rev.6.00 Jan 06, 2012 Silicon P Channel MOSFET Power Switching Features • Low on-resistance RDS(on) = 41 m typ. (at VGS = –4.5 V)  Low drive current.  1.8 V gate drive devices.


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    HAT1093C R07DS0605EJ0600 REJ03G1230-0500) PWSF0006JA-A PDF

    PD168807

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD168807 4-ch Output DC-DC Converter Controller IC R03DS0001EJ0200 Rev.2.00 Mar 18, 2011 Description The μ PD168807 is a DC-DC converter controller IC that consists of 3-ch output circuits containing power MOSFET and 1-ch output circuits that can directly drive power MOSFET.


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    PD168807 R03DS0001EJ0200 PD168807 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2600T1R R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 mΩ Description The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


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    PA2600T1R PA2600T1R R07DS0998EJ0100 6pinHUSON2020 6pinHUSON2020 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2600T1R R07DS0998EJ0101 Rev.1.01 Sep 04, 2013 N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 mΩ Description The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


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    PA2600T1R R07DS0998EJ0101 PA2600T1R 6pinHUSON2020 PDF

    2SK4079

    Abstract: QN7002
    Text: Preliminary Data Sheet QN7002 R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source.


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    QN7002 R07DS0269EJ0100 QN7002, QN7002-T1B-AT 3000p/Reel SC-59 2SK4079044 2SK4079 QN7002 PDF