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    RECTIFIER 200V 5A Search Results

    RECTIFIER 200V 5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    CS4200V-01L Coilcraft Inc Current Sense Transformer, 35A, ROHS COMPLIANT Visit Coilcraft Inc
    iW673-01 Renesas Electronics Corporation Digital Green-Mode Synchronous Rectifier Controller Visit Renesas Electronics Corporation
    iW673-10 Renesas Electronics Corporation Digital Green-Mode Synchronous Rectifier Controller Visit Renesas Electronics Corporation
    iW673-20 Renesas Electronics Corporation Digital Green-Mode Synchronous Rectifier Controller Visit Renesas Electronics Corporation

    RECTIFIER 200V 5A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SCDA6

    Abstract: semtech rectifier bridge SCH25000 rectifier 400V 5A Full-Wave Bridge Rectifier SCBAR4F sdhd5k SC3BK4F SCDA4F 1N5415
    Text: 2008 Axial Rectifiers PART NUMBERS DESCRIPTION 1N5415 through 1N5420 Fast recovery axial rectifier, 50V - 600V, Io=4.5A 1N5550 through 1N5554 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 Standard recovery axial rectifier, 200V - 1000V, Io=5.0A Standard recovery axial rectifier, 200V - 1000V, Io=2.0A


    Original     		PDF 1N5415 1N5420 1N5550 1N5554 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 1N5615, SCDA6 semtech rectifier bridge SCH25000 rectifier 400V 5A Full-Wave Bridge Rectifier SCBAR4F sdhd5k SC3BK4F SCDA4F

    HIGH VOLTAGE RECTIFIER

    Abstract: sf10a200h
    Text: SF10A200HPI Ultrafast Recovery Rectifier 200V, 10A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction


    Original     		PDF SF10A200HPI O-220F-3L SF10A200HPI KSD-D0O010-002 HIGH VOLTAGE RECTIFIER sf10a200h

    sf10a200h

    Abstract: No abstract text available
    Text: SF10A200HPI Ultrafast Recovery Rectifier 200V, 10A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction


    Original     		PDF SF10A200HPI O-220F-3L SF10A200HPI KSD-D0O010-002 sf10a200h

    Untitled

    Abstract: No abstract text available
    Text: SF10A200HPR Ultrafast Recovery Rectifier 200V, 10A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common anode rectifier construction


    Original     		PDF SF10A200HPR O-220F-3L SF10A200HPR KSD-D0O014-001

    SF10A200HPR

    Abstract: freewheeling diode 5A marking code 1A diode
    Text: SF10A200HPR Ultrafast Recovery Rectifier 200V, 10A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common anode rectifier construction


    Original     		PDF SF10A200HPR O-220F-3L SF10A200HPR KSD-D0O014-001 freewheeling diode 5A marking code 1A diode

    SF10A20

    Abstract: SF10A200
    Text: SF10A200HPI Semiconductor Ultrafast Recovery Rectifier 200V, 10A ULTRAFAST DUAL RECTIFIERS Features y Low forward voltage drop and leakage current y Ultrafast reverse recovery time trr<30ns y Low power loss and high efficiency y Dual common cathode rectifier construction


    Original     		PDF SF10A200HPI O-220F-3L SF10A200HPI KSD-D0O010-001 SF10A20 SF10A200

    NTE5572

    Abstract: NTE5574 NTE5570
    Text: NTE5570, NTE5572, & NTE5574 Silicon Controlled Rectifier for Phase Control Applications Electrical Characteristics: Maximum values @ TJ = +125°C unless otherwise specified Repetitive Peak Voltages, VDRM & VRRM NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE5570, NTE5572, NTE5574 NTE5570 NTE5572 NTE5572 NTE5574 NTE5570

    SHD374651

    Abstract: VF10 VF11 VF12 VF13
    Text: SENSITRON SEMICONDUCTOR SHD374651 TECHNICAL DATA DATA SHEET 5160, REV. - LOW DROP SILICON RECTIFIER DESCRIPTION: 200V 50A Hermetic low drop rectifier in a SHD-3 HP package. Features: • • • • Designed for Battery Cell Bypass application Low package inductance


    Original     		PDF SHD374651 SHD374651 VF10 VF11 VF12 VF13

    nte5570

    Abstract: NTE5572 NTE5574 500v 50a scr 50A 1200V SCR SCR Gate Drive
    Text: NTE5570, NTE5572, & NTE5574 Silicon Controlled Rectifier SCR 125 Amp, TO94 Electrical Characteristics: (Maximum values @ TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM & VRRM NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE5570, NTE5572, NTE5574 NTE5570 NTE5572 nte5570 NTE5572 NTE5574 500v 50a scr 50A 1200V SCR SCR Gate Drive

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR F1B2CCI/CAI TECHNICAL DATA STACK SILICON DIFFUSED DIODE HIGH SPEED RECTIFIER APPLICATION. A C S P Average Output Rectified Current : IO=10A Tc=101 . Repetitive Peak Reverse Voltage : VRRM=200V. B E G Rectifier Stack of Single Phase Center Tap Type.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR F1B2CCI/CAI TECHNICAL DATA STACK SILICON DIFFUSED DIODE HIGH SPEED RECTIFIER APPLICATION. A Average Output Rectified Current : IO=10A Tc=101 . C P S Repetitive Peak Reverse Voltage : VRRM=200V. B E G Rectifier Stack of Single Phase Center Tap Type.


    Original     		PDF

    toshiba Silicon Rectifier Diodes

    Abstract: 5dlz47 5DLZ47A TOSHIBA RECTIFIER
    Text: 5DLZ47A TOSHIBA HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE 5DLZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 200V Average Forward Current : IF AV = 5A Ultra Fast Reverse-Recovery Time


    Original     		PDF 5DLZ47A 3-10C3A toshiba Silicon Rectifier Diodes 5dlz47 5DLZ47A TOSHIBA RECTIFIER

    SBR100-20LS

    Abstract: A11423 22yp
    Text: SBR100-20LS Ordering number : ENA1142 SANYO Semiconductors DATA SHEET SBR100-20LS Schottky Barrier Diode Twin Type • Cathode Common 200V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features


    Original     		PDF SBR100-20LS ENA1142 A1142-3/3 SBR100-20LS A11423 22yp

    NTE5567

    Abstract: NTE5569 NTE5571 NTE5568
    Text: NTE5567, NTE5568, NTE5569, & NTE5571 Silicon Controlled Rectifier SCR for Phase Control Applications Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified) Repetitive Peak Forward and Reverse Voltage, VDRM, VRRM NTE5567 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE5567, NTE5568, NTE5569, NTE5571 NTE5567 NTE5568 NTE5569 NTE5567 NTE5569 NTE5571 NTE5568

    5DLZ47A

    Abstract: No abstract text available
    Text: 5DLZ47A TOSHIBA HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE 5DLZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 200V l Average Forward Current : IF AV = 5A l Ultra Fast Reverse-Recovery Time


    Original     		PDF 5DLZ47A 5DLZ47A

    Untitled

    Abstract: No abstract text available
    Text: TP901C2 5A ( 200V / 5A ) LOW LOSS SUPER HIGH SPEED RECTIFIER Features Outline drawings, mm JEDEC EIAJ Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics


    Original     		PDF TP901C2

    Untitled

    Abstract: No abstract text available
    Text: TP901C2 5A ( 200V / 5A ) LOW LOSS SUPER HIGH SPEED RECTIFIER Features Outline drawings, mm JEDEC EIAJ Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics


    Original     		PDF TP901C2

    Untitled

    Abstract: No abstract text available
    Text: International rag Rectifier 4Ô55452 I NR PD-9.351F IRF9620 INTERNATIONAL HEXFET Power MOSFET • • • • • DG14fl7fl 5 ^ 0 • RECTIFIER Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements bSE D VDSS = -200V


    OCR Scan     		PDF IRF9620 DG14fl7fl -200V

    SS510

    Abstract: 1S1886A DO-15 BLUE CATHODE
    Text: 1S1886A TOSHIBA 1S1886A TOSHIBA RECTIFIER SILICON DIFFUSED TYPE GENERAL PURPOSE RECTIFIER APPLICATIONS • • • Average Forward Current : If a v = 1.2A (Ta = 60°C) Repetitive Peak Reverse Voltage : V r r m = 200V Peak One Cycle Surge Forward Current (Non Repetitive)


    OCR Scan     		PDF 1S1886A DO-15 SC-39 SS510 1S1886A DO-15 BLUE CATHODE

    F1B2CAI

    Abstract: F1B2CCI FIB2CAI
    Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO-LTD F1B2CCI/CAI STACK SILICON DIFFUSED DIODE HIGH SPEED RECTIFIER APPLICATION. FEATURES • Average Output Rectified Current : Io=10A Tc=101°C . • Repetitive Peak Reverse Voltage : V rrm=200V. • Rectifier Stack of Single Phase Center Tap Type.


    OCR Scan     		PDF ELECTRIC04 F1B2CAI F1B2CCI FIB2CAI

    10C2

    Abstract: 5DLZ47 5DLZ47A
    Text: TO SHIBA 5DLZ47A TOSHIBA HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE 5DLZ47A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 43.2 ± 0.2 10.3MAX. V = 200V Repetitive Peak Reverse Voltage Average Output Rectified Current I0 = 5A


    OCR Scan     		PDF 5DLZ47A 10C2 5DLZ47 5DLZ47A

    1S1886A

    Abstract: No abstract text available
    Text: 1S1886A TO SH IBA 1S1886A TOSHIBA RECTIFIER SILICON DIFFUSED TYPE Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS • • • Average Forward Current : Ip AV = 1.2A (Ta = 60°C) Repetitive Peak Reverse Voltage : V r r m = 200V Peak One Cycle Surge Forward Current (Non Repetitive)


    OCR Scan     		PDF 1S1886A 1S1886A

    F1B2CA

    Abstract: No abstract text available
    Text: SEMICONDUCTOR F1B2CC/CA TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. STACK SILICON DIFFUSED DIODE HIGH SPEED RECTIFIER APPLICATION. FEATURES • A verage Output Rectified Current : Io=10A Tc=108°C . • Repetitive Peak Reverse Voltage : Vrrm=200V. • Rectifier Stack of Single Phase Center Tap Type.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 5DLZ47A TOSHIBA HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE 5DLZ47A Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 10.3 M A X. V = 200V Repetitive Peak Reverse Voltage I0 = 5A Average Output Rectified Current


    OCR Scan     		PDF 5DLZ47A