TC51V18165
Abstract: TC51V18165CFT
Text: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC51V18165 C J/C FT - 60 SILICON GATE CMOS DATA TENTATIVE DATA 1,048,576 W O RD x 16 BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC51V18165CJ/CFT is EDO (hyper page) dynamic RAM organized 1,048,576 words by 16 bits.
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TC51V18165
TC51V18165CJ/CFT
TC51V18165CJ/CFT--31
TC51V18165CJ/CFT--
TC51V18165CFT
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ic 3254
Abstract: D46258
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD46258,46259L 256K-BIT BiCMOS FAST STATIC RAM 32K-WORD BY 8-BIT/32K-WORD BY 9-BIT Description The /JPD46258 is 262,144 b its 32,768 w o rd s by 8 bits and the /iPD46259L is 294,912 b its (32,768 w o rd s by 9 b its) BiCMOS sta tic RAMs.
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uPD46258
uPD46259L
256K-BIT
32K-WORD
8-BIT/32K-WORD
/JPD46258
/iPD46259L
//PD46258
PD46259L.
ic 3254
D46258
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MC-428LFC72FB-A60
Abstract: MC-428LFC72FH-A60 50A16
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-428LFC72 3.3V OPERATION 8M -W O RD BY 72-B IT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The M C -428LFC72 is a 8,388,608 w ords by 72 bits dynam ic RAM module on which 9 pieces of 64 M DRAM: /iP D 4265805 are assembled.
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MC-428LFC72
-428LFC72
M168S-50A17-2
MC-428LFC72FB-A60
MC-428LFC72FH-A60
50A16
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD434008 4M-BIT CMOS FAST STATIC RAM 512K-WORD BY 8 BITS Description The /JPD434008 is a high speed, lo w pow er, 4 194 304 bits 524 288 w o rd s by 8 bits CMOS static RAM. The / jPD434008 is packed in 36-pin plastic SOJ.
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uPD434008
512K-WORD
/JPD434008
jPD434008
36-pin
/JPD434008LE-20
434008LE-25
040-O
PD434008.
UPD434008
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ud46
Abstract: UPD46258
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 6 2 5 8 ,4 6 2 5 9 L 256K-BIT BiCMOS FAST STATIC RAM 32K-WORD BY 8-BIT/32K-WORD BY 9-BIT Description The /¿PD46258 is 262,144 bits 32,768 w o rd s by 8 bits and th e ¿iPD46259L is 294,912 b its (32,768 w o rd s
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256K-BIT
32K-WORD
8-BIT/32K-WORD
uPD46258
uPD46259L
PD46258
iiPD46259L.
46259L
32-pin
ud46
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S2LFB64S 3.3 V OPERATION 2M -W O RD BY 64-B IT DYNAM IC RAM M ODULE SO DIM M , EDO Description The M C -42S2LFB64S is a 2,097,152 w ords by 64 bits dynam ic RAM module (Small Outline DIMM) on which 8 pieces of 16 M DRAM: /¿PD42S17805L are assembled.
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MC-42S2LFB64S
-42S2LFB64S
uPD42S17805L
C-42S2LFB64S-A60
C-42S2LFB64S-A70
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-42S4000LAB32S SERIES 4 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The M C -42S4000LAB32S series ¡s a 4,194,304 w o rd s by 32 b its d yn a m ic RAM m o d u le (S m a ll O u tlin e D IM M )
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MC-42S4000LAB32S
32-BIT
-42S4000LAB32S
PD42S17800L
72PIN
tiM57S2S
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The ^PD 431009 is a high speed, low pow er, 1 179 072 bits 131 072 w o rd s by 9 bits C M O S static RAM. The ¿iPD431009 is packed in 36-pin plastic SOJ.
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128K-WORD
iPD431009
36-pin
PD431009LE-15
iPD431Q09LE-17
b427525
DGb42T2
P431009
PD431009.
iPD431009LE:
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IC-3237
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The /¿PD431009 is a high speed, lo w p o w e r, 1 179 072 b its 131 072 w o rd s by 9 b its CMOS sta tic RAM. The ¿iPD431009 is packed in 36-pin p la stic SOJ.
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uPD431009
128K-WORD
PD431009
iPD431009
36-pin
Stan-400A
040-ooos
/JPD431009.
/iPD431009LE:
IC-3237
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / MC-42S4000LAB32S SERIES 4 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description T he M C -42S4000LAB32S series is a 4,194,304 w o rd s by 32 b its d y n a m ic RAM m o d u le (S m a ll O u tlin e D IM M )
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MC-42S4000LAB32S
32-BIT
/iPD42S17800L
72PIN
M72S-50A2-2
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TC51V16405
Abstract: TC51V16405c
Text: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The TC51V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The
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TCS1V1c405
TC51V16405CSJS/CSTS
300mil)
TCS1V16405
TC51V16405
SOJ26
TSOP26
TC51V16405c
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d431008
Abstract: No abstract text available
Text: DATA SHEET Æ MOS INTEGRATED CIRCUIT C ¿¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The ¿iPD431008 is a high speed, lo w po w e r, 1 048 576 b its 131 072 w o rd s by 8 bits CMOS s ta tic RAM. The jt/PD431008 is packed in 32-pin p la stic SOJ.
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PD431008
128K-WORD
iPD431008
jt/PD431008
32-pin
Acc400
040-o
016to
008tg
P431008
d431008
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-422000LAB72F 3.3 V OPERATION 2 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-422000LAB72F is a 2,097,152 w o rd s by 72 bits d yn a m ic RAM m o d u le on w h ic h 9 pieces o f 16 M DRAM: jUPD4217800L are assem bled.
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MC-422000LAB72F
72-BIT
MC-422000LAB72F
jUPD4217800L
M168S-50A8
b427525
00bl73Ã
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000AA64FB 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C -421000AA64FB is a 1,048,576 w o rd s by 64 b its d y n a m ic RAM m o d u le on w h ic h 4 pieces o f 16 M DRAM : /iPD4218160 are asse m bled .
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MC-421000AA64FB
64-BIT
MC-421000AA64FB
uPD4218160
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.
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PD431016L
64K-WORD
16-BIT
//PD431016L
/iPD431016L
44-pin
431016LLE-A
PD431016LLE-A20
/iPD431016L.
/PD431016LLE:
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CA724 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description T h e M C -4 58C A 72 4 is a 8,3 8 8 ,6 0 8 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w hich 9 p iece s of 64M
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MC-458CA724
72-BIT
MC-458CA724
72-bits
uPD4564841
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4cmv
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-454BA80 4M-W ORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The M C -4 54B A 80 is a 4 ,1 9 4 ,3 0 4 w o rd s by 80 b its syn ch ro n o u s d yn a m ic RAM m odule on w hich 20 p ie ce s of 16 M
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MC-454BA80
80-BIT
MC-454BA80
uPD4516421
4cmv
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MC-421000AA64FB-70
Abstract: MC-421000AA64FB-60
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT M C -421000A A 64FB 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C -421000AA64FB is a 1,048,576 w o rd s by 64 b its d y n a m ic RAM m o d u le on w h ic h 4 pieces o f 16 M DR AM : /¿PD4218160 are assem bled.
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21000A
64-BIT
MC-421000AA64FB
uPD4218160
b42752S
MC-421000AA64FB-70
MC-421000AA64FB-60
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description T he M C -4 516 D A 7 2 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w h ich 18 pieces o f 64M
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MC-4516DA72
72-BIT
uPD4564441
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nec 4217400
Abstract: D42S17400 4216400 NEC 4217400-60 4217400-60
Text: DATA SHEET MOS INTEGRATED CIRCUIT r//PD42S16400,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION T he ¿¿PD42S16400, 4216400, 42S17400, 4217400 are 4 194 304 w o rd s by 4 bits d y n a m ic CMOS RAM s. These d iffe r in refresh cycle and th e /¿PD42S16400, 42S17400 can execute CAS before RAS s e lf refresh and
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uPD42S16400
uPD4216400
uPD42S17400
uPD4217400
PD42S16400,
42S17400,
42S17400
iPD42S16400,
nec 4217400
D42S17400
4216400
NEC 4217400-60
4217400-60
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Untitled
Abstract: No abstract text available
Text: tiM27SSS □ □ 4 1 b cl2 2TÛ ATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S4800L, 424800L 3.3 V OPERATION 4 M BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The ^PD42S4800L, 424800L are 524 288 w o rd s b y 8 b its d yn a m ic CMOS RAM s. The fa st page m ode ca p a b ility
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tiM27SSS
//PD42S4800L,
424800L
PD42S4800L,
424800L
/PD42S4800L
28-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT M C-421000A32 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description Th e M C -4 210 00A 32 is a 1,0 48,5 76 w o rd s by 32 b its dyn am ic RAM m o d u le on w hich 8 p ie ce s of 4 M DRAM: ¿/PD424400 are assembled.
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21000A
32-BIT
MC-421000A32
uPD424400
MC-421OOOA32-6D
MC-421000A32-70
MC-421000A32-80
MC-421000A32-10Please
L427525
MC-421000A32B,
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16400L; 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 w o rd s by 4 bits dyn am ic CMOS RAMs.
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PD42S16400L;
4216400L,
42S17400L,
4217400L
16M-BIT
/iPD42S16400L,
4217400L
jiPD42S16400L,
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S 16800, 4216800, 42S17800, 4217800 are 2 097 152 w o rd s b y 8 b its d y n a m ic CMOS RAM s. These d iffe r in refresh cycle and th e ¿¿PD42S16800, 42S17800 can exe cute CAS be fore RAS se lf refresh.
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PD42S16800
42S17800
iiPD42S
42S17800,
PD42S16800,
28-pin
/iPD42S16800-50,
PD42S17800-50,
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