2n3773 power Amplifier circuit diagrams
Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Text: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete
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AN-6671
G4000)
G4000
2n3773 power Amplifier circuit diagrams
SCR Handbook, rca
HC2000H
rca transistor npn a13
B0241C
npn transistor RCA 467
40659
triac t6440m
RCa T2850D
DIAC D3202U
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tic 1260 scr texas
Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Text: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.
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2N4933
Abstract: RCA-2N4933 2N4932 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE
Text: File No. 249 RF P o w e r T ra n s is to r s 2N4932 2N4933 Solid State Division RCA-2N4932* and RCA-2N4933* are epitaxial silicon n-p-n planar transistors of the “ overlay” emitter elec trode construction. They are especially intended to pro vide high power as class C rf amplifiers for International
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2N4932
2N4933
RCA-2N4932*
RCA-2N49331
88MHz)
2N4932
2N4933,
24-volt
ST-3250.
ST-3230.
2N4933
RCA-2N4933
VK200 INDUCTOR
choke vk200
inductor vk200
transistor 200A 24V
RCA transistors
rca 249
VK200 FERRITE
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 57E I> • 4302271 G G 2 G 4 eì2 ^ ■ HAS Power T ran sisto RCA 1000, RCA1001 File Number 594 T-33'-2cC 8-A m pere Silicon N -P -N Darlington Pow er Transistors
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RCA1001
RCA1000,
00204T4
CS-IW44AI
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transistor tl 188
Abstract: 92CS-27516
Text: BUX11A High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor TERMINAL DESIGNATIONS c £ Features: • I / c eo 1353 File N um ber FLANGE _ -190 V 92CS-27516 m l c - 20 A ■ Pt - 200 W JEDEC TO-204AA POWER TRANSISTORS The RCA-BUX11A epitaxial-base silicon n-p-n transistor
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BUX11A
92CS-27516
O-204AA
RCA-BUX11A
O-204AA
92CS-3227I
transistor tl 188
92CS-27516
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 4DE D B 4302271 GÜ33747 FRK9460D OBJECTIVE HARRIS • RCA • BE • 4 •HAS 10A, -500V RDS on =1,20n INTERSIL This Objective Data Sheet Represents the Proposed Device Performance. Radiation-Hardened P-Channel Power MOSFET TO-204AE
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FRK9460D
-500V
O-204AE
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723ct
Abstract: A723E CI CA723 CA723CE CA723 harris intersil
Text: Power Control Circuits HARRIS S E M I C O N D U C T O R HARRIS RCA - GE CA723, CA723C INTERSIL May 1990 Voltage Regulators For Regulated Output Voltage Adjustable from 2 V to 37 V at Output Currents up to 150 mA without External Pass Transistors Features:
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CA723,
CA723C
CA723
723ct
A723E
CI CA723
CA723CE
harris intersil
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C04-013
Abstract: 74ls10 IC CMOS 4000B series rca 74 HC Series ICs C04013
Text: Application Notes Power Consumption in QMOS Logic Circuits by R. Funk and B. Heinze QMOS, RCA’s high-speed CMOS-logic technology, offers users the best features of both CMOS and TTL tech nolog ies: the low-power consumption of CMOS and the fast speeds associated with LSTTL. This Application Note focuses on
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SSD-290.
C04-013
74ls10 IC
CMOS 4000B series rca
74 HC Series ICs
C04013
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BDY58R
Abstract: RCA-BDY58R
Text: BDY58R File Number Silicon N-P-N Switching Transistors 1206 TERM INAL DESIGNATIONS c E FLANGE! For Switching Applications in Industrial and Commercial Equipment Features: • VCE0 - 160V • lc — 25 A ■ P T — 175 W JEDEC TO-204AA The RCA-BDY58R is a silicon n-p-n power transistor featur
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BDY58R
O-204AA
RCA-BDY58R
O-204AA
S-31456
BDY58R
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CA3102E
Abstract: CA3049T RCA CA3049T ca3049
Text: D ifferential Am plifiers HARRIS S E M I C O N D U C T O R HARRIS RCA GE - CA3049, CA3102 INTERSIL May 1990 Dual High-Frequency Differential Amplifiers For Low-Power Applications at Frequencies up to 5 0 0 MHz Features: Applications: • Power Gain 23 dB typ. at 200 MHz
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CA3049,
CA3102
CA3102E
CA3049T
RCA CA3049T
ca3049
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RCA-40967
Abstract: 40967 40968 ATC100 596 transistor 2575A rca 832
Text: File No. 596 RF Pow er T ra n sis to rs 40967 40968 Solid State Division 2 -W and 6 -W 4 7 0 - MHz Silicon N -P -N Overlay Transistors For UHF Amplifier Service T - Features-. • A ll devices tested at in fin ite VSWR w ith rated power inpu t RCA H F -44 PA C K AG E
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470-MHz
RCA-40967
TA8562
TA8563,
VOLTAGE115
40967
40968
ATC100
596 transistor
2575A
rca 832
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IRF640R
Abstract: IRF641R free energy transis Harris MOSFET N-CHANNEL nh
Text: HARRIS SEMICOND SECTOR IbE D • H3DSS71 D01S4Ö2 3 ■ fSi HARRIS Power MOSFETs S E M I C O N D U C T O R HARRI S RCA GE T-3^/3 I NTERSI L IRF640R, IRF641R IRF642R, IRF643R Avalanche Energy Rated N-Channel Power MOSFETs 16A and 18A, 200V, 150V rDs on = 0 .1 8 0 and 0.22fi
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H3DSS71
D01S4
IRF640R,
IRF641R
IRF642R,
IRF643R
O-220AB
IRF641R,
IRF642R
IRF640R
free energy transis
Harris MOSFET N-CHANNEL nh
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2N3839
Abstract: 2N2857 2n3839 rca VHF transistor amplifier circuit
Text: File No. 229 0Q Q BÆ I Power Transistors Solid State Division _ 2N3839 RCA-2N3839* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely use ful in low-noise-amplifier, oscillator, and converter applications at frequencies up to 500 MHz in the common-emitter configuration, and up to 1200 MHz, in the
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2N3839
RCA-2N3839*
2N3839
2N2857,
2N2857
2n3839 rca
VHF transistor amplifier circuit
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equivalent M 393
Abstract: No abstract text available
Text: HARRIS V p 11 SEMCONt SECTOR 4DE D m 2N7285R, 2N7285H HARRIS S E M I C O N D U C T O R RCA H AR RIS GE MB02271 DD337b2 0 EiHAS REGISTRATION PENDING Available As FRM240R, FRM240H IN T E R S IL 3 16A,200V RDS(on =0.24n Radiation-Hardened N-Channel Power MOSFETs
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MB02271
DD337b2
2N7285R,
2N7285H
FRM240R,
FRM240H
equivalent M 393
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Rad hard MOSFETS in Harris
Abstract: No abstract text available
Text: HARRIS 1 a H A R R IS 1 SEIHCOND SECTOR H A R R IS GE D I 4305571 0033744 OBJECTIVE S E M I C O N D U C T O R RCA MDE TBHAS FRF9450D 5 A ,-5 0 0 V RDS on =1,82 a IN T E R SIL This Objective Data Sheet Represents the Proposed Device Performance, Radiation-Hardened P-Channel Power MOSFETs
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FRF9450D
F9450D
Rad hard MOSFETS in Harris
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Untitled
Abstract: No abstract text available
Text: H A R R I S SEfllCOND S E C T O R £ *? H A R R I S U U HARRIS RCA GE MOE D • 4 3 0 2 27 1 0 0 3 3 7 3 a 3 B HAS OBJECTIVE FRS9440D - H " '! RDS on =4.22n 2 .5 A .-S 0 0 V INTERSIL This Objective Data Sheet Represents the Proposed Device Performance. Radiation-Hardened P-Channel Power M O SFETs
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FRS9440D
FRS9440D
10Krads
12nAper
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2n3553
Abstract: 2N3375 2N3632 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666
Text: File No. 386 n n r p /jn RF Power T ran sisto rs UVAUDZ7U 2N 3375 2N 3553 2N 3632 D ivision3*6 40665 RCA 2N3632, 2N3553, 2N3375, 40665 a n d 40666 are e p ita x ia l silico n n-p-n tra n sis to rs of th e “ ov erlay ’* em itter electro d e co n stru ctio n . T hey are intended for u se in
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2N3375
2N3553
2N3632
2N3632,
2N3553,
2N3375,
and40666
2N355
TRANSISTOR 2n355
2N3553 RCA
npn Epitaxial Silicon zg
2N3632 RCA
rca 2n3375
40666
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ca3055
Abstract: CA3085BS CA3085 ca308s CA3085 diagram equivalent transistor c 243
Text: Power Control Circuits f f H A R R IS S E M H A R R IS I C RCA O N D GE U • C T O R CA 30 85 , CA 3085A , C A 3085B IN T E R S IL May 1990 Positive Voltage Regulators F e a tu re s: A p p lic a tio n s: • Up to 100 mA output current • Input and output short-circuit protection
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3085B
LM100
21--Combination
IN176
2N532?
ca3055
CA3085BS
CA3085
ca308s
CA3085 diagram
equivalent transistor c 243
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rca 2n3375
Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
Text: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)
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000-Series
2N1492
RCA-CA3000
RFT-700E/2L
1076R5
rca 2n3375
2N3553 equivalent
RCA TO60 TRANSISTORS
40281
40280
RCA RF POWER TRANSISTOR
CD2152
2N2876
RCA Transistors
rca power transistor
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philco transistors
Abstract: DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES
Text: SEMICONDUCTOR COMPLEMENT MANUAL TABLE OF CONTENTS Transistors — Home Equipment Page S Transistors — Auto Radios Page 28 Semiconductor Diodes — Home Equipment Page 25 Silicon Rectifiers Page 60 Mechanical Specifications and Connections Page 62 S Y L V A N IA ELEC TR IC P R O D U C T S INC.
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2N252
2N309
2N140
521-6T2
528-6T2
002DIA
SR200
SR500
philco transistors
DS503
2N408
DELCO Radio transistor
philco
westinghouse transistors 163-H72
westinghouse transistors
D3052
2T862
westinghouse DIODES
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1N5411
Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal
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CON-46
O-104
14-Lead
16-Lead
12-Lead
16-Lead
O-220AB
1N5411
npn transistor RCA 467
CD4004T
CA3051
CD4001D
40468A
RCA 40822
40664 SCR
rca 40583
2N5756
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RCA 2N3055 transistor
Abstract: 2N3442 RCA transistor BF 257 2N3055 RCA rca 2n3771 2N3772 RCA rca 2n3055 2N4348 RCA 2n3055r rca transistor
Text: APPLICATION INFORMATION . Power Types for Electrostatic Deflection and Video Output Power Types [N-P-N & P-N-P] as Pass Transistors for Series Regulator Service Peak Output Voi tage V Pass Transistor Conditions 10 to 60 Bandwidth > 1MHz Regulator Output Current (1 ) — A
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2N2102]
L2N4036J
2N1482
2N5321
2N5323
2N6179
2N6181
2N3054
2N5955
2N5497
RCA 2N3055 transistor
2N3442 RCA
transistor BF 257
2N3055 RCA
rca 2n3771
2N3772 RCA
rca 2n3055
2N4348 RCA
2n3055r
rca transistor
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12n08
Abstract: rca application notes RFP12N10 pt 4115 TA9284 AN7260 AN7254 RFM12N08 RFM12N10 RFP12N08
Text: Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 File N um ber 1386 N-Channel Enhancernent-Mode Power Field-Effect Transistors 12 A, 80 and 100 V TdS o n ' 0.2 f i Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds
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RFM12N08,
RFM12N10,
RFP12N08,
RFP12N10
92CS-3374I
RFM12N08
RFM12N10
RFP1I2N08
RFM12N18,
12n08
rca application notes
pt 4115
TA9284
AN7260
AN7254
RFP12N08
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RCA9229D
Abstract: RCA9228D ACS 0865 rca 9228 d RCA9228A RCA9228B RCA9228C RCA9229A RCA9229B RCA9229C
Text: 3875081 G E SOLID SfÄTE 01E 17323 D Darlington Power Transistors File Number 1448 RCA9228A, RCA9228B, RCA9228C, RCA9228D RCA9229A, RCA9229B, RCA9229C, RCA9229D 50-A C om plem entary High Current,
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RCA9228A,
RCA9228B,
RCA9228C,
RCA9228D
RCA9229A,
RCA9229B,
RCA9229C,
RCA9229D
T0-204AE
RCA-9228
RCA9229D
RCA9228D
ACS 0865
rca 9228 d
RCA9228A
RCA9228B
RCA9228C
RCA9229A
RCA9229B
RCA9229C
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