Untitled
Abstract: No abstract text available
Text: RB717F Diodes Schottky barrier diode RB717F zApplications General purpose detection High speed switching zExternal dimensions Units : mm 2.0±0.2 0.9±0.1 1.3±0.1 2.1±0.1 0.65 0~0.1 0.15±0.05 3E 0.3±0.1 (All leads have the same dimensions) zConstruction
|
Original
|
RB717F
SC-70
OT-323
|
PDF
|
rb717f schottky barrier diode
Abstract: RB717F
Text: RB717F Diodes Schottky barrier diode RB717F zApplications General purpose detection High speed switching zExternal dimensions Units : mm 2.0±0.2 0.9±0.1 1.3±0.1 2.1±0.1 0.65 0~0.1 0.15±0.05 3E 0.3±0.1 (All leads have the same dimensions) zConstruction
|
Original
|
RB717F
SC-70
OT-323
rb717f schottky barrier diode
RB717F
|
PDF
|
RB717F
Abstract: No abstract text available
Text: RB717F Diodes Schottky barrier diode RB717F zApplications Low current rectification z Land size figure Unit : mm z External dimensions (Unit : mm) 2.0±0.1 1.3 ＋0.1 0.25 －0.05 各リードとも Each lead has same dimension 同寸法 ＋0.1 0.15 －0.06
|
Original
|
RB717F
OT-323
SC-70
RB717F
|
PDF
|
RB717F
Abstract: Schottky Diode rb717f schottky barrier diode
Text: Diodes Schottky barrier diode RB717F FApplications General purpose detection High speed switching FExternal dimensions Units: mm Schottky barrier diodes FFeatures 1) Multiple diodes with common anode configuration. (UMD3) 2) High reliability. 3) Low reverse current and low forward voltage.
|
Original
|
RB717F
RB717F
Schottky Diode
rb717f schottky barrier diode
|
PDF
|
RB717F
Abstract: No abstract text available
Text: RB717F Diodes Schottky barrier diode RB717F zApplications Low current rectification z Land size figure Unit : mm z External dimensions (Unit : mm) 1.3 2.0±0.2 0.65 0.15±0.05 0.9MIN. 各リードとも Each lead has same dimension 同寸法 2.1±0.1 1.25±0.1
|
Original
|
RB717F
OT-323
SC-70
RB717F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RB717F Diodes Schottky barrier diode RB717F Applications Low current rectification Land size figure Unit : mm External dimensions (Unit : mm) 緱綌縈 3/1‒1/3 緫綌縠縕 1/26‒1/16 緫綌繮耑翮耔綌 返鷺察彩膏豪 Each lead has same dimension
|
Original
|
RB717F
|
PDF
|
rb717f schottky barrier diode
Abstract: RB717F
Text: RB717F RB717F ＳＯＴ－３２３ SCHOTTKY BARRIER DIODE FEATURES: １．０１ ＲＥＦ １．２５±０．０５ Power dissipation PD : 200 mW（Tamb=25℃） Collector current IF : 30 mA Collector-base voltage VR : 40 V Operating and storage junction temperature range
|
Original
|
RB717F
026TYP
650TYP
525REF
021REF
rb717f schottky barrier diode
RB717F
|
PDF
|
RB717F
Abstract: No abstract text available
Text: RB717F Diodes Schottky barrier diode RB717F zApplications Low current rectification z Land size figure Unit : mm z External dimensions (Unit : mm) 㪈㪅㪊 r 㪇㪅㪍㪌 r 㪇㪅㪐㪤㪠㪥㪅 ฦ࠼ߣ߽ Each lead has same dimension
|
Original
|
RB717F
RB717F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMBD717 Schottky Barrier Diode SOT-323 Features High reliability type. Low VF. High reliability. Applications Low current rectification. Dimensions in inches and millimeters Ordering Information Type No. Marking Package Code RB717F 3E SOT-323
|
Original
|
MMBD717
OT-323
RB717F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes SOT-323 RB717F SCHOTTKY BARRIER DIODE FEATURES: Low VF, Low VR High reliability 1 MARKING: 3E• 3 2 Maximum Ratings @Ta=25 ℃ Symbol Limit Unit Peak reverse voltage VRM
|
Original
|
OT-323
OT-323
RB717F
|
PDF
|
MARKING 3E
Abstract: RB717F
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode RB717F SOT-323 SCHOTTKY BARRIER DIODE FEATURES: Low VF, Low VR High reliability MARKING: 3E• Maximum Ratings @TA=25 ℃ Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage
|
Original
|
OT-323
RB717F
OT-323
MARKING 3E
RB717F
|
PDF
|
RB717F
Abstract: No abstract text available
Text: RB715F / RB717F SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protecion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
|
Original
|
RB715F
RB717F
OT-323,
MIL-STD-202,
RB717F
|
PDF
|
RB717F
Abstract: No abstract text available
Text: RB717F SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 0.03 Ampere FEATURES SOT-323 • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses SOT-323 Dim. A A1 b c D E E1 e e1 L MECHANICAL DATA
|
Original
|
RB717F
OT-323
OT-323
J-STD-020D
2002/95/EC
RB717F
|
PDF
|
RB717F
Abstract: rb717f schottky barrier diode J-STD-020D
Text: RB717F SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 0.03 Ampere FEATURES SOT-323 • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses SOT-323 Dim. A A1 b c D E E1 e e1 L MECHANICAL DATA
|
Original
|
RB717F
OT-323
OT-323
J-STD-020D
2002/95/EC
RB717F
rb717f schottky barrier diode
J-STD-020D
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode RB717F SOT-323 SCHOTTKY BARRIER DIODE FEATURES: 1. 01 REF 1. 25¡ À0. 05 Power dissipation mW Tamb=25℃ 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current 30 mA IF: Collector-base voltage
|
Original
|
OT-323
RB717F
OT-323
|
PDF
|
A0 DIODE
Abstract: DSA0023839 RB717F MARKING 3E
Text: RB717F SOT-323 SCHOTTKY BARRIER DIODE FEATURES: 1. 01 REF 1. 25¡ À0. 05 Power dissipation mW Tamb=25℃ 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current 30 mA IF: Collector-base voltage 40 V VR: Operating and storage junction temperature range 2. 00¡ À0. 05
|
Original
|
RB717F
OT-323
A0 DIODE
DSA0023839
RB717F
MARKING 3E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode RB717F ＳＯＴ－３２３ SCHOTTKY BARRIER DIODE FEATURES: １．０１ ＲＥＦ １．２５±０．０５ Power dissipation PD : 200 mW（Tamb=25℃）
|
Original
|
OT-323
RB717F
525REF
026TYP
650TYP
021REF
|
PDF
|
SOT-323 package outline
Abstract: Plastic-Encapsulate Diodes marking E1 RB717F MARKING 3E Diodes a2 0016C
Text: SOT-323 Plastic-Encapsulate Diodes RB717F ＳＯＴ－３２３ SCHOTTKY BARRIER DIODE FEATURES: １．０１ ＲＥＦ １．２５±０．０５ Power dissipation PD : 200 mW（Tamb=25℃） Collector current IF : 30 mA Collector-base voltage
|
Original
|
OT-323
RB717F
525REF
026TYP
650TYP
021REF
SOT-323 package outline
Plastic-Encapsulate Diodes
marking E1
RB717F
MARKING 3E
Diodes a2
0016C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# RB717F Features • • • • • x • 30 mA Schottky Barrier Diode 40 Volts Halogen free available upon request by adding suffix "-HF"
|
Original
|
RB717F
OT-323
|
PDF
|
RB717F
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features RB717F 30 mA Schottky Barrier Diode 40 Volts • • • • High reliability Low VF and Low IR Epoxy meets UL 94 V-0 flammability rating
|
Original
|
RB717F
OT-323
RB717F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Diodes Schottky Barrier Diode RB717F ►External dimensions Units: mm •A pplications General purpose detection High speed switching 1.3±0.1 r . - î 0.65 0.65 i "T ra : h 3 £ î (¿î o Î o i S I t1 Schottky barrier diodes r •F e a tu re s 1) Designed for mounting on small surface areas (UMD3)
|
OCR Scan
|
RB717F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Diode, Schottky barrier, surface mount RB717F These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Each envelope contains two diodes with a common anode. Dimensions Units : mm 1 3±0 1 i 0r— 65 0 65 Features
|
OCR Scan
|
RB717F
SC-70,
OT-323)
RB717F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RB717F K/Diodes R B 717F H lf ê 4 l/ Under Development v 'j3 > it:$ iv 7 ^ v a 'y K Silicon Epitaxial Schottky Barrier Diode • • W f é ^ iH / 'D im e n s io n s (U nit : mm ) 1) 7 y - h ' 3 i > ’X > ÿ - i 7 ' o 2) 5 Ko 3) isiiaflÆT fe -5 o • Features
|
OCR Scan
|
RB717F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RB717F K /D io d e s R B 717F Silicon Epitaxial Schottky Barrier Diodes • 4 • « * 1 / J v M a i i g * - f 7 T ' & 5 4 - / Di mensi ons Unit : mm) (U M D )o 2) ra ig flT 'ife -5 0 • Features 1) Small surface m ount typ e (UMD). 2) High relia bility.
|
OCR Scan
|
RB717F
|
PDF
|
