PQ62
Abstract: DQ73
Text: 168 Pin DIMM Characteristics. 168 Pin Buffered DIMM Characteristics Basic Architecture ECC Data Bit Assignments DRAM CHIPS Intended primarily for use in 8-byte systems, although use in 4-byte systems is supported via onboard interleave, the basic structure of 168 pin
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Parity/x72
PQ62
DQ73
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PAL20V8
Abstract: BRY 56 C MACHXL AMD pal20v8 DRAM controller EPX780 rick jd MACH210 BRY 56 B Intel AP-726
Text: A AP-726 APPLICATION NOTE Interfacing the i960 Jx Microprocessor to the NEC µPD98401* Local ATM Segmentation and Reassembly SAR Chip Rick Harris SPG 80960 Applications Engineer Intel Corporation Semiconductor Products Group Mail Stop CH6-311 5000 W. Chandler Blvd.
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AP-726
PD98401*
CH6-311
PAL20V8
BRY 56 C
MACHXL
AMD pal20v8
DRAM controller
EPX780
rick jd
MACH210
BRY 56 B
Intel AP-726
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MC-424000A36FE-60
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-424000A32, 424000A36 SERIES 4 M-WORD BY 32-BIT, 4 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A32 series is a 4,194,304 words by 32 bits dynamic RAM module on which 8 pieces of 16 M DRAM: 4 M-word by 4 bits are assembled.
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MC-424000A32,
424000A36
32-BIT,
36-BIT
MC-424000A32
MC-424000A36
MC-424000A36FE-60
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MCM54400A
Abstract: 5Bp power control 39NC60 126 motorola Nippon capacitors
Text: MOTOROLA Order this document by MCM64100/D SEMICONDUCTOR TECHNICAL DATA MCM64100 Product Preview 1M x 64 Bit Dynamic Random Access Memory Module 1 10 The MCM64100 is a dynamic random access memory DRAM module organized as 1,048,576 x 64 bits. The module is a JEDEC-standard 168-lead dual-in-line
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MCM64100/D
MCM64100
MCM64100
168-lead
MCM54400A
300-mil
MCM64100/D*
5Bp power control
39NC60
126 motorola
Nippon capacitors
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SO DIMM 72-pin
Abstract: DIMM 72 pin out
Text: 72 Pin SO DIMM Characteristics . Application Note 72 Pin SO DIMM Characteristics Basic Architecture DRAM addressing effects A listing of the 72 Pin SO DIMM Pin Assignments is on page 2. SO DIMMs are designed to provide for a multitude of potential DRAM chip depth granularities as shown in
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motorola 26 pins connector
Abstract: A11 box Nippon capacitors
Text: MOTOROLA Order this document by MCM64400/D SEMICONDUCTOR TECHNICAL DATA MCM64400 Product Preview 4M x 64 Bit Dynamic Random Access Memory Module The MCM64400 is a dynamic random access memory DRAM module organized as 4,194,304 x 64 bits. The module is a JEDEC–standard 168–lead
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MCM64400/D
MCM64400
MCM64400
MCM516400
MCM64400/D*
motorola 26 pins connector
A11 box
Nippon capacitors
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SO DIMM DRAM 144 Pin Connector Pinout
Abstract: SO DIMM 100 Pin Connector Pinout "simm 72 pin" SO DIMM 72-pin 168-pin sdram dimm x64 edo dram 72-pin SO DIMM
Text: INFORMATION NOTE Presence Detect Assignments on SIEMENS Memory Modules 3.97 Weidlich, Technical Marketing Memories INFOMOD3.FRM MEMORY MODULES Overview: This information note describes the organisation and presence detect assignments used on the SIEMENS memory module families. The SIEMENS memory module families come with present
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168pin
SO DIMM DRAM 144 Pin Connector Pinout
SO DIMM 100 Pin Connector Pinout
"simm 72 pin"
SO DIMM 72-pin
168-pin sdram dimm x64
edo dram 72-pin SO DIMM
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qml-38535
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add criteria for QD device types. Add vendor CAGE 3V146. Correct the SMD title. Update boilerplate to MIL-PRF-38535 requirements. - CFS 02-06-10 Thomas M. Hess B Correct the IIL test VCC from 4.5 V to 5.5 V in table I. Correct waveform timing
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3V146.
MIL-PRF-38535
3V146
3V146
2964B/BQA
2964B/BUA
qml-38535
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p77 cac
Abstract: MB85391A-60
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11209-1E MEMORY CMOS 4M x 32 FAST PAGE MODE DRAM MODULE MB85391A-60/-70 CMOS 4M × 32 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB85391A is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting
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DS05-11209-1E
MB85391A-60/-70
MB85391A
MB8117400A
72-pad
F9704
p77 cac
MB85391A-60
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MB85396A-70
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11205-1E MEMORY CMOS 4M x 36 FAST PAGE MODE DRAM MODULE MB85396A-60/-70 CMOS 4M × 36 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB85396A is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting
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DS05-11205-1E
MB85396A-60/-70
MB85396A
MB8117400A
MB814100C
72-pad
MB85396A-70
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Untitled
Abstract: No abstract text available
Text: UG54W6646HSG-6 Revision History Jun 28 , 2002 Rev - B Pr el im in ar y Apr 30 , 1999 Rev - A Added More Detailed Dimension Information Of PCB , Full Data sheet Changed to new format. U N IG EN C O N FI D EN TI AL Datasheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539
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UG54W6646HSG-6
168Pin
UG54W6646HSG-6
UG54W6646HSG-6is
4Mx16
400mil
168-pin
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TMS4116
Abstract: TMS4132
Text: MOS LSI TMS 4132 JDL 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY NOVEMBER 1979 32,768 «AX SUPPLY 1 X 1 Organization 10% Tolerance on All Supplies • All Inputs Including Clocks TTL-Compatible
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768-BIT
18-PIN
200ACCESS
4132JD
TMS4116
TMS4132
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4164 64k dram
Abstract: Z41H tms4164 S41128B
Text: TM S41128B 131,072-BIT DYNAMIC RANDOM-ACCESS MEMORY A PRIL 1985 —R EVISED NOVEM BER 1985 16-PIN PLASTIC DUAL-IN-LINE STACKED PACKAGES t 2 X 6 5 ,5 3 6 X 1 Organization TOP VIEW Single 5-V Supply (10% Tolerance) DC 1 U l 6 Uv s s wc 2 15 3 CA S RAS1C 3
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S41128B
072-BIT
4164 64k dram
Z41H
tms4164
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ms-6535
Abstract: AA51 4116 lf 4116 16k ram 18-PIN BOX225012 TMS4132JDL 3as1 tms 375 CA31
Text: MOS LSI 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY i- 32,768 X — i- NOVEMBER 1978 1 Organization • 10% Tolerance on All Supplies All Inputs including Clocks TTL-Compatible 18-PIN SIDEBRAZE DUAL-IN-LINE PACKAGE TOP VIEW • Unlatched Three-State Fully TTL-Compatible
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768-BIT
18-Pin
300-Mil
TMS4132JDL
ms-6535
AA51
4116 lf
4116 16k ram
BOX225012
TMS4132JDL
3as1
tms 375
CA31
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DIMM 72 pin out
Abstract: ms6464
Text: Application Note 72 Pin SO DIMM Characteristics Basic Architecture the following table: A listing of the 72 Pin SO DIMM Pin Assignments is on page 1374. Intended primarily for the emerging low-power mar ket, or any system in which space is at a premium,
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AO-A11
DIMM 72 pin out
ms6464
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CY7BB991-7
Abstract: B00J AMD pal20v8 INTEL AP-72 Intel AP-726
Text: in tg l AP-726 APPLICATION NOTE Interfacing the i960 Jx Microprocessor to the NEC HPD98401* Local ATM Segmentation and Reassembly SAR Chip S e p te m b e r , 2 1 , 1 9 9 5 I Order Number: 272779-001 1-665 AP-726 Benefits of using the PCI-SDK include: This application note describes the interface between Intel's • The PCI-SDK plugs directly into a DOS-based
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AP-726
HPD98401*
AP-726
nPD98401®
CY7BB991-7
B00J
AMD pal20v8
INTEL AP-72
Intel AP-726
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MB85391
Abstract: No abstract text available
Text: MEMORY — — i CMOS 4M x 32 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB85391A is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting of eight MB8117400A devices. The MB85391A is optimized for those applications requiring high speed, high
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MB85391A
MB8117400A
72-pad
F9704
MB85391
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM64400 Product Preview 4M x 64 Bit Dynamic Random Access Memory Module The MCM64400 is a dynamic random access memory DRAM module organized as 4,194,304 x 64 bits. The module is a JED EC -standard 168-lead d u a l-in -lin e memory module (DIMM) with 84 separate contacts per side, consist
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MCM64400
MCM64400
168-lead
400-m
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Untitled
Abstract: No abstract text available
Text: KMM364V213AJ/AT Fast Page Mode 2Mx64 DRAM DIMM Based on 2Mx8, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM364V213A is a 2M bit x 64 Dynamic RAM high density memory module • Part Identification The - KMM364V213AJ 2048 cycles/32ms Ref. 400mil SOJ
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KMM364V213AJ/AT
2Mx64
KMM364V213A
400mil
48pin
168-pin
KMM364V213AJ
cycles/32ms
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VL4502
Abstract: TMS4500 VL4502-15PC thct4502 tms4500a
Text: VLSI T e c h n o l o g y , in c . VL4502 DYNAMIC RAM CONTROLLER DESCRIPTION FEATURES • Inputs are TTL voltage compatible • Controls operation of 64K and 256K dynamic RAMs • Creates static RAM appearance • One package contains address multiplexer, refresh control and
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VL4502
VL4502
TMS4500
VL4502-15PC
thct4502
tms4500a
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WTS 1.7 IC 28 PIN
Abstract: No abstract text available
Text: M IC R O N 1 MT12D88C140 1 MEG x 40. 2 MEG x 20 IC DRAM CA R D IC DRAM CARD 4 MEGABYTES 1 MEG x 40, 2 MEG x 20 PIN ASSIGNMENT End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access -6 -7 GENERAL DESCRIPTION The MT12D88C140 is a 4 m egabyte, IC DRAM card
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MT12D88C140
88-pin
x32/36/40
128ms
ASSI67
MT12O80C14O
WTS 1.7 IC 28 PIN
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d947
Abstract: hy51v18164b
Text: • « H Y U N D A I H Y M 5 V 7 2 A 1 2 4 A R - S e r ie s Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A124A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168
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72-bit
HYM5V72A124A
HY51V4404B
HY51V18164B
2048bit
HYM5V72A124ARG/ASLRG/ATRG/ASLTRG
DQ0-DQ71)
1ECM-10-APR96
d947
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Untitled
Abstract: No abstract text available
Text: ^Ordering number : ENN*6614 CMOS IC LC898023K SAÜŸO, 40x Playback/16x Write CD-R/RW Encoder/Decoder IC with Built-in SCSI Interface Preliminary Functions CD-ROM decoder/encoder functions CD decoder/encoder functions Pit and wobble CLV servo CAV audio functions
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LC898023K
Playback/16x
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC SSE D blllSMT OOCmR'ì'ì fiT? • MRN MT8D88C25632 256K x 32, 512K x 16 1C D R AM C A R D MICRON ■ ■ TECHNOLOGY. INC. _ :_ ~r-q 1C DRAM CARD 1 MEGABYTE 256K x 32, 512Kx 16 PIN ASSIGNMENT End View 88-Pin Card (U-1) • JEIDA, JEDEC and PCMCIA standard 88-pin IC
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MT8D88C25632
512Kx
88-Pin
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