STW6NA90
Abstract: sd 50 diode
Text: STW6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW6NA90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STW6NA90
100oC
O-247
STW6NA90
sd 50 diode
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STU6NA100
Abstract: No abstract text available
Text: STU6NA100 N - CHANNEL 1000V - 1.45Ω - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V < 1.7 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED
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STU6NA100
Max220
100oC
STU6NA100
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STU7NA90
Abstract: sd 50 diode
Text: STU7NA90 N - CHANNEL 900V - 1.05 Ω - 7A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU7NA90 900 V < 1.3 Ω 7A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.05 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED
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STU7NA90
Max220
100oC
STU7NA90
sd 50 diode
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LT6350
Abstract: LTC2391-16 LTC2392-16 LTC2393 LTC2393-16
Text: LTC2393-16 16-Bit 1Msps SAR ADC 125°C + o t C – 40° ranteed Gua 4.096V 5V IN+ OVDD = 1.8V to 5V LTC2393-16 IN– SPI or Parallel Internal Reference 4.096V Wide Fully Differential Input Range Achieves 94.2dB SNR High SNR is achieved with a ±4.096V maximum signal swing that helps overcome background noise levels in demanding
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LTC2393-16
16-Bit
LTC2393-16
LTC2393
20ppm/
140mW
LT6350
110dB
LTC2391-16
LTC2392-16
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U6NA100
Abstract: STU6NA100
Text: STU6NA100 N - CHANNEL 1000V - 1.45Ω - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST U6NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V < 1.7 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED
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STU6NA100
Max220
U6NA100
100oC
U6NA100
STU6NA100
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program delphi
Abstract: software delphi DLL4882 ni application note ni488 NI-488
Text: Application Note 085 Using NI-488.2M Software with 32-Bit Delphi Applications L. Rantanen Introduction Borland Delphi version 2.0 , one of the latest visual programming languages, uses Rapid Application Development (RAD) tools. With RAD tools, one can quickly and easily create Windows applications. Delphi is based on Object
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NI-488
32-Bit
gpib-32
support/gpib/pc/delphi/win32/
program delphi
software delphi
DLL4882
ni application note
ni488
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20V8
Abstract: GAL20LV8 GAL20LV8D-3LJ GAL20LV8D-5LJ GAL20LV8D-7LJ simple diagram for electronic clock
Text: Ne Tolew 5V Inp rant u 20L ts on V8D GAL20LV8 Functional Block Diagram Features • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology
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GAL20LV8
Tested/100%
20V8
GAL20LV8
GAL20LV8D-3LJ
GAL20LV8D-5LJ
GAL20LV8D-7LJ
simple diagram for electronic clock
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W7NA90
Abstract: STW7NA90 welding circuit diagram W7NA
Text: STW7NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST W7NA90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.3 Ω 7A TYPICAL RDS(on) = 1.05 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STW7NA90
W7NA90
100oC
O-247
W7NA90
STW7NA90
welding circuit diagram
W7NA
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20V8
Abstract: GAL20LV8 GAL20LV8D-3LJ GAL20LV8D-5LJ GAL20LV8D-7LJ
Text: GAL20LV8 Ne Tolew 5V Inp rant u 20L ts on V8D Low Voltage E2CMOS PLD Generic Array Logic Functional Block Diagram Features • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from Clock Input to Data Output
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GAL20LV8
20V8
GAL20LV8
GAL20LV8D-3LJ
GAL20LV8D-5LJ
GAL20LV8D-7LJ
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state variable filter
Abstract: AN797 BI-QUAD RC Active Bandpass Filter AN-797
Text: AN-797 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/461-3113 • www.analog.com Quad Precision Op Amp Evaluation Board by Giampaolo Marino and Steve Ranta INTRODUCTION The EVAL-PRAOPAMP- 4R/4RU is an evaluation board
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AN-797
AN05566
state variable filter
AN797
BI-QUAD RC Active Bandpass Filter
AN-797
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GAL programmer schematic
Abstract: GAL22LV10D-4LJ GAL22LV10D-5LJ GAL22LV10 GAL22LV10C GAL22LV10C-10LJ GAL22LV10C-15LJ GAL22LV10C-7LJ
Text: Ne Tolew 5V Inp rant 22Luts on V10 D Features GAL22LV10 Low Voltage E2CMOS PLD Generic Array Logic Functional Block Diagram • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 4 ns Maximum Propagation Delay — Fmax = 250 MHz — 3 ns Maximum from Clock Input to Data Output
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22Luts
GAL22LV10
22V10
GAL22LV10C)
Reconfigur00
GAL programmer schematic
GAL22LV10D-4LJ
GAL22LV10D-5LJ
GAL22LV10
GAL22LV10C
GAL22LV10C-10LJ
GAL22LV10C-15LJ
GAL22LV10C-7LJ
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GAL22LV10C-10LJ
Abstract: GAL22LV10C-15LJ GAL22LV10D-4LJ GAL22LV10D-5LJ GAL22LV10 GAL22LV10C
Text: Ne Tolew 5V Inp rant 22Luts on V10 D GAL22LV10 Low Voltage E2CMOS PLD Generic Array Logic Functional Block Diagram Features • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 4 ns Maximum Propagation Delay — Fmax = 250 MHz — 3 ns Maximum from Clock Input to Data Output
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22Luts
GAL22LV10
Tested/100%
100ms)
132X44)
GAL22LV10C-10LJ
GAL22LV10C-15LJ
GAL22LV10D-4LJ
GAL22LV10D-5LJ
GAL22LV10
GAL22LV10C
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pin details of ic 2561
Abstract: ttl XOR gate circuit IC of XOR GATE 20V8 GAL20LV8 GAL20LV8D-3LJ GAL20LV8D-5LJ GAL20LV8D-7LJ G20V8A
Text: Ne Tolew 5V Inp rant u 20L ts on V8D GAL20LV8 Low Voltage E2CMOS PLD Generic Array Logic Functional Block Diagram Features • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from Clock Input to Data Output
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GAL20LV8
pin details of ic 2561
ttl XOR gate circuit
IC of XOR GATE
20V8
GAL20LV8
GAL20LV8D-3LJ
GAL20LV8D-5LJ
GAL20LV8D-7LJ
G20V8A
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STW16NA60
Abstract: No abstract text available
Text: STW16NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW16NA60 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 0.4 Ω 16 A TYPICAL RDS(on) = 0.33 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STW16NA60
100oC
O-247
STW16NA60
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Untitled
Abstract: No abstract text available
Text: HçyUiniûtîtfc’ 1 A L O U T P U T PEN TO D E P E N T H O D E D E S O R T IE P E N T H O D E -E N D R O E H R E H e a rin g : Chauffage : H eizung : In d ir e c t ; A .C .; parallel supply In d ire c t ; cou rant a lte rn a tif ; alim entation en parallèle
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000X1
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Untitled
Abstract: No abstract text available
Text: Zjï SGS-THOMSON ¡ILIOTI^OKinei STW6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss STW 6NA90 900 V R d S oii Id a 6 A < 1 .9 . TYPICAL RDs(on) = 1.45 £2 . ± 30V GATE TO SOURCE VOLTAGE RANTING . 100% AVALANCHE TESTED
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STW6NA90
6NA90
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: STU7NA90 N - CHANNEL 900V - 1.05 £2 - 7A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss R d S oii STU 7N A 90 900 V < 1.3 a Id 7 A TYPICAL R D S (on) = 1.05 . ± 30V GATE TO SOURCE VOLTAGE RANTING . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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STU7NA90
Max220
Max220
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D1985
Abstract: No abstract text available
Text: y k iy jx iw i Quad SPST CMOS Analog Sw itches _ . The MAX332 and DG202/DG212 are sim ilar to the DG201 and DG211 except fo r inverted co n tro l inputs. A ll devices have g u a ranteed b re a k-b e fo re -m a ke sw itching as well as essentially constant on resistance
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332/D
202/D
MAX332,
DG202
DG212
AX332
DG202/212
MAX332
DG202/DG212
DG201
D1985
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X318
Abstract: X319 X31C MAX319MJA X317 MAX319ESA T AX318 AX319 MAX318CPA
Text: 1 9-0185; R e v 0; 9 /9 3 Precision, CMOS Analog S w itches T he M A X 3 1 7 /M A X 3 1 8 /M A X 3 1 9 a re fa b ric a te d w ith M axim 's new im p ro ve d silico n -g a te p rocess. Design im p ro ve m en ts g u a rantee extrem ely low ch a rg e in je c
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AX318
AX319
250pA
MILSTD-883.
MAX317
MAX318
MAX31»
X318
X319
X31C
MAX319MJA
X317
MAX319ESA T
MAX318CPA
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HK6201
Abstract: No abstract text available
Text: Am «p no o oondMon fc a f V • not to b t 4M m m I. nproduowl o r UMd. tn ■ M i o r In port, fo r manufooM « o r o h by anyono oMm t than Amphonoi C enm H an wWiout h pdor eaneart, f t th a t no ngM b ranted to oM m * o r to uoo any tirform cwon to Hit» rio om rant._
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HK3779
HK6201
rA\CaATA01
HK6201
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2T3604
Abstract: L73L 2T3605 2T3606 2t3607 H21E rouge 2T3604 2T3605 2T3606 2T3607 ScansUX7 h21E1
Text: VRAnilfTORf TYPE n-p-n A ll SILICIUM P L A N A R S -E P IT A X IA U X DE COMMUTATION RAPIDE /E D S 11508-73/ 1. Corps on matière plastique TO-92 2. Valeurs g.i ranties sous Tam ^ ^ /2 5 i 2/°C Espèce U n ité P a ra m è tre de Régim e de v a le u r mesure
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maxCD0i/48w
2T3604
2T3605
2T3606
2T3607
L73L
H21E
rouge
2T3604 2T3605 2T3606 2T3607
ScansUX7
h21E1
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HP5082-2811
Abstract: HP5082 hp50822811 hp5082 diode 1AAA AD7533UD/883B AD7533TD/883B AD7533 AD7533JN AD7533KN
Text: ANALOG DEVICES □ CM0S Low Cost 10-B'it Multiplying DAC P R E L IM IN A R Y TE C H N IC A L DATA FEATURES Lowest Cost 10 Bit D A C Direct A D 7 5 2 0 Equivalent L ire a rity 1 or 2LSB Low Power Dissipation Full F o u r-Qu ad rant M u ltip ly in g D<\C C M O S /T T L Direct Interface
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10-Bit
AD7520
AD7533
AD7520,
AD753
HP5082-2811
HP5082
hp50822811
hp5082 diode
1AAA
AD7533UD/883B
AD7533TD/883B
AD7533JN
AD7533KN
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TIC 136 Transistor
Abstract: No abstract text available
Text: STU6NA100 N - CHANNEL 1000V - 1 .45ß - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss S T U 6N A 100 1000 V R dS oii Id a 6 A < 1 .7 . TYPICAL RDs(on) = 1.45 £2 . ± 30V GATE TO SOURCE VOLTAGE RANTING . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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STU6NA100
Max220
Max220
TIC 136 Transistor
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Untitled
Abstract: No abstract text available
Text: Zjï SGS-THOMSON ¡ILIOTI^OKinei S T W 16N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW 16N A 60 V dss R d S oii Id 600 V < 0.4 a 16 A • TYPICAL RDS(on) = 0.33 . ± 30V GATE TO SOURCE VOLTAGE RANTING . 100% AVALANCHE TESTED
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STW16NA60
O-247
P025P
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