GR3281
Abstract: ram 62256 43256 43256 static ram 55257 62256 55257 RAM 62256 RAM STATIC RAM 62256 16 STATIC RAM 62256
Text: GR3281 32K x 8 NON-VOLATILE RAM GR3281 (32K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR3281 is a 32768 word by 8 bits (32K x 8) non-volatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.
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GR3281
GR3281
2000/95/EC
ram 62256
43256
43256 static ram
55257
62256
55257 RAM
62256 RAM
STATIC RAM 62256
16 STATIC RAM 62256
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16v8 PLD
Abstract: 48C101 7c63000a 7C128 2061A B1225 CERAMIC QUAD FLATPACK CQFP
Text: Ordering Information RAM, PROM, Dual-Port Static RAM, FIFO, Data Communications PREFIX DEVICE CY CY CY CY CY CY 7C128 62256L 7C245L 7C09389V 7C4292V 7B991 C = CMOS B = BiCMOS SUFFIX -45 D M B -70 S C -35 P C -15 J C -25 AS C -5 J C FAMILY CMOS SRAM - FAST
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7C128
62256L
7C245L
7C09389V
7C4292V
7B991
MIL-STD-883C
48C101,
W42C31,
231XNZ
16v8 PLD
48C101
7c63000a
2061A
B1225
CERAMIC QUAD FLATPACK CQFP
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7C245
Abstract: b1225 CERAMIC QUAD FLATPACK CQFP 22V10 PAL CMOS device 228X 16R8 7B991 PAL20 7C404 7C128
Text: Ordering Information RAM, PROM, Dual-Port Static RAM, FIFO, Data Communications PREFIX DEVICE CY CY CY CY CY CY 7C128 62256 7C245 7C006 7C404 7B991 C = CMOS B = BiCMOS SUFFIX -45 D L-70 S L-35 P V-15 J -25 D -5 J MB C C C MB C FAMILY CMOS SRAM - FAST CMOS SRAM - SLOW
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7C128
7C245
7C006
7C404
7B991
MIL-STD-883C
T229X,
W42C31,
231XNZ
WB1330,
7C245
b1225
CERAMIC QUAD FLATPACK CQFP
22V10 PAL CMOS device
228X
16R8
7B991
PAL20
7C404
7C128
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CERAMIC QUAD FLATPACK CQFP
Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC CERAMIC LEADLESS CHIP CARRIER PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC CY74FCT CERAMIC LEADLESS CHIP CARRIER LCC 24 ic 62256 dual flatpack 8 PAL20 22V10 PAL CMOS device
Text: Ordering Information RAM, PROM, Dual-Port Static RAM, FIFO, Data Communications PREFIX DEVICE CY CY CY CY CY CY 7C128 62256 7C245 7C006 7C404 7B991 C = CMOS B = BiCMOS SUFFIX -45 D L-70 S L-35 P V-15 J -25 D -5 J MB C C C MB C FAMILY CMOS SRAM - FAST CMOS SRAM - SLOW
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7C128
7C245
7C006
7C404
7B991
MIL-STD-883C
231XNZ
7C63000A
CERAMIC QUAD FLATPACK CQFP
64 CERAMIC LEADLESS CHIP CARRIER LCC
CERAMIC LEADLESS CHIP CARRIER
PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC
CY74FCT
CERAMIC LEADLESS CHIP CARRIER LCC 24
ic 62256
dual flatpack 8
PAL20
22V10 PAL CMOS device
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GR3281-H
Abstract: ram 62256 55257 GR3281H 43256 43256 static ram 62256 55257 RAM 62256 RAM gr3281
Text: GR3281H 32K x 8 NON-VOLATILE RAM GR3281H (32K x 8) NON-VOLATILE RAM READ CYCLE > Address < CE t OH > t ACC > < tACS > tOLZ t> < <CLZ> DOUT < Symbol t RC t ACC t ACS t OE t CLZ t OLZ t OH t CHZ t OHZ < t < CHZ t < OE > OE > t OHZ > WRITE CYCLE 1 t WC < <
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GR3281H
GR3281-H
ram 62256
55257
GR3281H
43256
43256 static ram
62256
55257 RAM
62256 RAM
gr3281
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43256
Abstract: 55257 RAM 62256 62256 RAM ram 62256 GR3281-H GR3281H
Text: GR3281H 32K x 8 NON-VOLATILE RAM GR3281H (32K x 8) NON-VOLATILE RAM READ CYCLE > Address < CE t OH > t ACC > < tACS > tOLZ t> < <CLZ> DOUT < Symbol t RC t ACC t ACS t OE t CLZ t OLZ t OH t CHZ t OHZ < t < CHZ t < OE > OE > t OHZ > WRITE CYCLE 1 t WC < <
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GR3281H
43256
55257 RAM
62256
62256 RAM
ram 62256
GR3281-H
GR3281H
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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Untitled
Abstract: No abstract text available
Text: EBKNWICH 32K x 8 NON-VOLATILE RAM «SIBMWIS DD GR3281 • Has instant power circuit, does not require voltage slew • Plug-in replacement for Static RAM chips • Retains data for up to 10 years • No erasure required • Functions as Data or Program RAM
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GR3281
28-pin
GR3281
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43256
Abstract: 55257 RAM
Text: T O Q S ^ P 'W 32K x 8 NON-VOLATILE RAM INSTRUMENTS USA • • • • • • • G R 3281 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programming cycles
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28-pin
GR3281
A0-A14
GR3281.
43256
55257 RAM
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Untitled
Abstract: No abstract text available
Text: blE ì> m >441bS□•+ 0G3flb3D b24 • H IT 3 H D 64610- HITACHI/ ncu/npu Calendar C lock 1C Description Pin Arrangement • • • • • • • • • • 8-bit data bus (static-RAM interface); high speed static-RAM timing equivalent to HM 62256
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64610----Calendar
003flbb2
HD64610
003abb3
Q03flbt
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ic 62256
Abstract: 62256 RAM ram 62256 62256 STATIC RAM 62256 74HC138 16 STATIC RAM 62256 RAMBO
Text: O N S ET COMPUTER CORP 13E D | L^M O D? 00D 03D 1 D | September 1988 RAMBO 512K Static RAM Module Module Dimensions Features •1.75"- * 512K x 8 CMOS Static RAM * Pin Compatible with Anticipated 4 Megabit Static RAM Chips •>:o>x«X«:<<4xo:9 :vxv:w :v.v:*.v.'4iV A <% > v-*A w -w 4V ÿ> w .v.i
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74HC138
ic 62256
62256 RAM
ram 62256
62256
STATIC RAM 62256
16 STATIC RAM 62256
RAMBO
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62256a
Abstract: 62256alp LFP-12T
Text: HM62256A Series Preliminary 32,768-Word x 8-Bit High Speed CMOS Static RAM • DESCRIPTION The Hitachi HM62256A is a CMOS static RAM organized 32k-word x 8-bit. It realizes higher perfor mance and low power consumption by employing 0,8 jim HI-CMOS process technology. The device,
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HM62256A
768-Word
32k-word
450-mil
600mil
300-mil
DP-28)
62256a
62256alp
LFP-12T
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Untitled
Abstract: No abstract text available
Text: HM62256A Series 32,768-w ord x 8-bit H igh S p e e d C M O S S ta tic RAM The Hitachi HM 62256A is a CMOS static RAM organized 32-kw ord x 8-bit. It realizes higher p e rfo rm a n c e an d low p o w e r c o n su m p tio n by employing 0.8 im Hi-CMOS process technology.
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HM62256A
768-w
2256A
32-kw
450-mil
600-mil
300-mil
HM62256AP-8
HM62256AP-10
HM62256AP-12
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62256 hitachi
Abstract: 62256BLP-7
Text: HM62256B Series 32,768-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-135D Z Rev. 4.0 Nov. 29, 1995 Description The Hitachi HM62256B is a CMOS static RAM organized 32-kword x 8-bit. It realizes higher performance and low power consumption by employing 0.8 |lm Hi-CMOS process technology. The device, packaged in 8
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HM62256B
768-word
ADE-203-135D
32-kword
450-mil
600-mil
300-mil
62256BL
62256 hitachi
62256BLP-7
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hm62256blfpi
Abstract: HM62256BLPI-10 HM62256BI hm62256blpi10 HM62256BLPI-7SL HM62256BLPI hm62256blfpi7slt HM62256BLFPI-7SLT HM62256BLFPI8T CDB 447
Text: ADE-203-271B Z HM62256BI Series 32,768-word x 8-bit High Speed CMOS Static RAM Rev. 2.0 July 20, 1995 HITACHI The Hitachi HM 62256BI is a CM OS static RAM o rg an ized 3 2 -k w o rd x 8-bit. It re a liz e s h igher p e r fo r m a n c e a n d low p o w e r c o n s u m p tio n by
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ADE-203-271B
HM62256BI
768-word
62256BI
HM62256BLFPI-8T
HM62256BLPI-10
HM62256BLPI-7SL
600-mil
hm62256blfpi
hm62256blpi10
HM62256BLPI
hm62256blfpi7slt
HM62256BLFPI-7SLT
HM62256BLFPI8T
CDB 447
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HM62256BLFP-7T
Abstract: No abstract text available
Text: HM62256B Series 32,768-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-135D Z Rev. 4.0 Nov. 29, 1995 Description The Hitachi HM62256B is a CMOS static RAM organized 32-kword x 8-bit. It realizes higher performance and low power consumption by employing 0.8 |i.m Hi-CMOS process technology. The device, packaged in 8
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HM62256B
768-word
ADE-203-135D
32-kword
450-mil
600-mil
300-mil
HM62256BLFP-7T
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hm62256blp
Abstract: HM62256BLFP-7SLT
Text: HM62256B Series 32,768-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-135D Z Rev. 4.0 Nov. 29, 1995 Description The Hitachi HM62256B is a CMOS static RAM organized 32-kword X 8-bit. It realizes higher performance and low power consumption by employing 0.8 (Am Hi-CMOS process technology. The device, packaged in 8
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HM62256B
768-word
ADE-203-135D
32-kword
450-mil
600-mil
300-mil
HM62256BLSP
DP-28NA)
hm62256blp
HM62256BLFP-7SLT
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62256alp
Abstract: No abstract text available
Text: HM62256A Series- P re lim in a ry 32,768-Word x 8-Bit High Speed CMOS Static RAM • DESCRIPTION Th e Hitachi H M 6 2 2 5 6 A is a C M O S static RAM organized 32k-w o rd x 8-bit. It realizes higher perfor m ance and low pow er consum ption by employing
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HM62256A
768-Word
32k-w
450-m
300-m
62256alp
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Untitled
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/MEN SIE P • D O I T 'I S ? HM62256A Series- ‘Î 4 T Preliminary 32,768-Word x 8-Bit High Speed CMOS Static RAM H 4 - Z 3 - 1 3 ■ DESCRIPTION The Hitachi HM62256A is a C M O S static RAM organized 32k-word x 8-bit. It realizes higher perfor
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HM62256A
768-Word
32k-word
450-mil
600mil
300-mil
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62256DLG-7L
Abstract: No abstract text available
Text: KM62256D Family CMOS SRAM Document Title « 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No History Draft Data Remark 0.0 Initial draft May 18th 1997 Design target 0.1 First revision
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KM62256D
32Kx8
KM62256DL/DLI
62256DL-L
62256DLI-L
62256D-4/5/7
62256DL/DLI
62256DL-L/DLI-L
62256DLG-7L
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Untitled
Abstract: No abstract text available
Text: KM62256CL-LV CMOS SRAM 32Kx8 Bit Extended Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage : 3 .0 -5 .5 V The K M 62256C L-L V is a 262 ,14 4 -b it high-speed Static Random Access M em ory organized as 3 2 ,7 6 8 words
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KM62256CL-LV
32Kx8
100ns
28-pin
28-PinTSO
62256C
02130A
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Untitled
Abstract: No abstract text available
Text: AKM 62256A Series 32768-word x 8-bit High Speed CMOS Static RAM Features A K M 62256A P Series • High Speed: Fast Access Time 85/100/120/150 ns max. • Low Power Standby and Low Power Operation; Standby: 10 yW (typ) (L-/L-SL version) Operation: 40mW (typ) (f = 1MHz)
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2256A
32768-word
FP-28DA)
AKM62256AP-8
62256AP-10
AKM62256AP-12
AKM62256AP-15
100ns
120ns
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62256LP-12
Abstract: AKM62256-10 62256FP-12T 62256P
Text: AK M 62256 Series 32768-word x 8-bit High Speed CMOS Static RAM • • FEATURES High Speed: Fast Access Time 85/100/120/150ns max. • Low Power Standby and Low Power Operation; • Standby: 200^tW {t y p ) /1 0/uW (typ) (L-version), Operation: 40mW (typ.) (f = 1MHz)
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32768-word
85/100/120/150ns
62256P
DP-28)
62256FP
M62256P-8
AKM62256
62256LP-12
AKM62256-10
62256FP-12T
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