6116 ram
Abstract: memory 6116 6116 ram 2k 24-Pin Plastic DIP 6116 series Static RAMs 6116 static ram CY6116 ram 6116 6116 memory chip L6116CC15
Text: L6116 L6116 DEVICES INCORPORATED 2K x 8 Static RAM Low Power 2K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 2K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum
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L6116
L6116)
L6116-L)
L6116-L
MIL-STD-883,
IDT6116,
CY7C128/CY6116
6116 ram
memory 6116
6116 ram 2k
24-Pin Plastic DIP
6116 series Static RAMs
6116 static ram
CY6116
ram 6116
6116 memory chip
L6116CC15
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GR281
Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.
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GR281
GR281
2000/95/EC
2716 eprom
4016 RAM
2716 eprom datasheet
memory 2716
eprom 2716
pd446
static ram 4802
2716 2k eprom retention
memory ram 6116
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6116 ram
Abstract: 6116 ram 2k memory 6116 6116 static RAM chip L6116M chip diagram of ram chip 6116
Text: L6116 L6116 DEVICES INCORPORATED 2K x 8 Static RAM Low Power 2K x 8 Static RAM (Low Power) DEVICES INCORPORATED DESCRIPTION ROW SELECT 7 O ROW ADDRESS Two standby modes are available. Proprietary Auto-Powerdown circuitry reduces power consumption automatically during read or write
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L6116
L6116
L6116-L
L6116TM25*
L6116TM20*
L6116TM15*
MIL-STD-883
6116 ram
6116 ram 2k
memory 6116
6116 static RAM chip
L6116M
chip diagram of ram chip 6116
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P89C660
Abstract: 89C662
Text: P89C66x Microcontroller P89C660, P89C662, P89C664 Description The P89C66x, based on the 80C51 family, has up to 64 KB of Flash program memory and is set apart from other 80C51 derivatives with I2C and RAM capacity up to 2048 bytes. The P89C66x RAM to ROM ratio meets the designer’s
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P89C66x
P89C660,
P89C662,
P89C664
P89C66x,
80C51
611651/20K/FP/2pp/1200
P89C660
89C662
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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EL6116
Abstract: 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25
Text: L 6116 2K x 8 Static RAM Low Power D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 2K x 8 Static RAM w ith Chip Select Powerdown, Output Enable The L6116 is a high-performance, lowpower CMOS Static RAM. The storage circuitry is organized as 2048
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L6116
L6116)
L6116-L)
L6116
L6116-L
MIL-STD-883,
IDT6116,
CY7C128/CY6116
24-pin
EL6116
6116 RAM
ci 6116
ram 6116
IDT6116
memory 6116
6116 memory
6116 ram 2k
chip diagram of ram chip 6116
L6116CMB25
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Untitled
Abstract: No abstract text available
Text: RPR 2K x 8 NON-VOLATILE RAM MsmumnsusA • • • • • • • • • GR281 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM
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GR281
24-pin
GR281
PD446,
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NVR2
Abstract: pd446
Text: GREENWICH 2K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • NVR2 Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Program RAM No limit to number of programming cycles Fits standard 24-pin socket
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24-pin
PD446
NVR2
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L6116PC85
Abstract: No abstract text available
Text: LOGIC DEVICES <ENC lbE D 2K x 8 Static RAM • ÌSbSTOS QGOdblb =i L6 116 T - -23-/2. Features Description □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, low- memory is deselected. In addition, power CMOS static RAM. The
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L6116
IDT6116,
CY7C128/CY6116
24-pin
24-pinPlastic
28-pin
L6116PC85
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Untitled
Abstract: No abstract text available
Text: apR FAST ACCESS - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout
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GR281-4
24-pin
GR281
PD446
GR281
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CY6116-35
Abstract: 6116 RAM expansion circuit
Text: CY6116 CYPRESS SEMICONDUCTOR " 2,048 x 8 Static RAV RAM Features Functional Description • Automatic power-down when deselected The C Y 6116 is a high-perform ance CM O S Static RAM organized as 2048 w ords by 8 bits. Easy m em ory expansion is provided by
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CY6116
CY6116-35
6116 RAM expansion circuit
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ram 8416
Abstract: No abstract text available
Text: FAST A C C E S S - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout
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GR281-4
24-pin
GR281
PD446
ram 8416
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chip diagram of ram chip 6116
Abstract: ci 6116 RAM 6116
Text: SGS-THOMSON KLH Tr[^© iìOa©S M K 6116 MK6116, MKI6116, MK6116L, MKI6116L (N/S - 15/20/25 2 K X 8 CMOS STATIC RAM • BYTEWYDE 2K x 8 CMOS STATIC RAM. .« lili ■ +5 VOLT ONLY WRITE/READ. ■ HIGH PERFORMANCE WITH LOW CMOS STANDBY POWER. PIN NAMES
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MK6116,
MKI6116,
MK6116L,
MKI6116L
24-PIN
28-PIN
MK6116
384-bit
24-pin,
chip diagram of ram chip 6116
ci 6116
RAM 6116
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S4-144
Abstract: IC cs 4852 T6116 6116LA25
Text: CMOS STATIC RAM 16K 2Kx 8-BIT (*/ integrated Devte Technology Inc IDT 6116SA IDT 6116LA FEATURES: DESCRIPTION: • O p tim ize d for fast RISC proce sso rs in clu d in g the IDT79R3000 • H igh-speed T h e ID T6116SA /LA is a 16,384-blt h ig h -sp ee d static RAM or
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6116SA
6116LA
IDT79R3000
5/19/20/25/30/35/45ns
IDT6116SA
100pW
IDT6116LA
160mW
S4-152
IDT6116SA/IDT6116LA
S4-144
IC cs 4852
T6116
6116LA25
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iAPX 286
Abstract: iAPX 88 all register 8088 ram 256K intel 8208 L8208 8052 AH Basic 8208-DRAM APX286 A208 80286 microprocessor pin out diagram
Text: inteT 8208 DYNAMIC RAM CONTROLLER 0 Wait State, 8 Mhz iAPX 286, iAPX 186/188, and iAPX 86/88 Interface Provides all Signals necessary to Control 64k and 256k Dynamic RAMs Support Synchronous, or Asynchronous Microprocessor Interfaces Automatic RAM Warm-up
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RAM MK6116
Abstract: MK6116-15 6116 ram 2k MK6116-25 DIP-24 MK6116 FZJ 105
Text: SGS-THOMSON M K 6116 M MK6116, MKI6116, MK6116L, MKI6116L N/S - 15/20/25 2 K X 8 C M O S STATIC RAM i BYTEWYDE 2K x 8 CM OS STATIC RAM. £.j U i +5 VOLT ONLY WRITE/READ. i 24-PIN 600 MIL PLASTIC DIP, JEDEC PINOUT 28-PIN 330 MIL SOIC. i EQUAL W RITE AND READ CYCLE TIMES.
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MK6116
MK6116,
MKI6116,
MK6116L,
MKI6116L
24-PIN
28-PIN
MK6116
384-bit
24-pin,
RAM MK6116
MK6116-15
6116 ram 2k
MK6116-25
DIP-24
FZJ 105
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Untitled
Abstract: No abstract text available
Text: in t é T 8208 DYNAMIC RAM CONTROLLER 0 Wait State, 8 Mhz IAPX 286, iAPX 186/188, and iAPX 86/88 Interface Provides all Signals necessary to Control 64k and 256k Dynamic RAMs Support Synchronous, or Asynchronous Microprocessor Interfaces Automatic RAM Warm-up
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TZ1114
Abstract: chip diagram of ram chip 6116 IDT6116 6116 static RAM chip 6116 ram 2k cewe EZ
Text: LOGIC DEVICES INC 2bE D • SSbSTOS OOOlOOfl 5 M _ _ _ _ _ _ 2K X 8 Static RAM T ~ 9 è ~2 3 - /2 L6116/L6116L Low Power DESCRIPTION FEATURES Q 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design
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L6116/L6116L
L6116)
100nW
L6116L)
IDT6116,
CY7C128/CY6116
24-pln
24-pin
TZ1114
chip diagram of ram chip 6116
IDT6116
6116 static RAM chip
6116 ram 2k
cewe EZ
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Untitled
Abstract: No abstract text available
Text: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for
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IDT71V124SA
10/12/15/20ns
32-pin
400-mil
32pin
IDT71V124
576-bit
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HM6116P-3
Abstract: HM6116LP-3 HM6116P-4 HM6116 6116fp HM6116LP HM6116LP-2 HM6116LP-3 HM6116LP3 HM6116LP-4 HM6116P3 HM6116FP-3
Text: Maintenance Only HM6116 Serles 2048-word x 8-bit High Spaed CMOS Static RAM •FEA TU R ES HM6116P Series • • Single 5V Supply High speed: Fast Access Time • Low Power Standby and • • • 180mW typ. 160mW (typ.) (L-version) Completely Static RAM:
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HM6116
2048-word
HM6116P
120ns/150ns/200ns
100fiW
180mW
160mW
HM6116P-3
HM6116P-4
HM6116LP-2
HM6116LP-3
6116fp
HM6116LP HM6116LP-2 HM6116LP-3
HM6116LP3
HM6116LP-4
HM6116P3
HM6116FP-3
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land pattern for TSOP 2 44 PIN
Abstract: com 6116 e2 CHN 920
Text: 3.3V CMOS STATIC RAM 1 MEG 128K X 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • JED E C revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle tim es
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9/10/12/15/20ns
32-pin
400-m
32pin
IDT71V124SA
T71V124
576-bit
land pattern for TSOP 2 44 PIN
com 6116 e2
CHN 920
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Untitled
Abstract: No abstract text available
Text: L 6 1 1 6 2K x 8 Static RAM Low Power DEVICES INCORPORATED DESCRIPTION FEATURES □ 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 10 ns maximum □ Low Power Operation
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L6116)
L6116-L)
L6116
L6116-L
MIL-STD-883,
IDT6116,
CY7C128/CY6116
24-pin
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HA 3089
Abstract: HA3089 30B9
Text: IDT6116SA IDT6116LA CMOS STATIC RAM 16K 2K x 8 BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed access and chip select times The ID T6116S A /L A is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using ID T's high-perfor
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IDT6116SA
IDT6116LA
T6116S
384-bit
002375B
IDT6116SA/LA
MIL-STD-883,
P24-1)
P24-2)
D24-1)
HA 3089
HA3089
30B9
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