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    TTM Technologies XRA10AA3SES

    SMD ATTENUATOR 3DB 2010
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    DigiKey XRA10AA3SES Digi-Reel 1,765 1
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    TTM Technologies XRA10AA30SES

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    TTM Technologies XRA10AA10SES

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    DigiKey XRA10AA10SES Cut Tape 986 1
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    XRA10AA10SES Digi-Reel 986 1
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    TTM Technologies XRA10AA1SES

    SMD ATTENUATOR 1DB 2010
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    TTM Technologies XRA10AA5SES

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    DigiKey XRA10AA5SES Cut Tape 684 1
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    XRA10AA5SES Digi-Reel 684 1
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    RA10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ra11b

    Abstract: L 146 CB MC-4532DA727 MC-4532DA727EF-A75 MC-4532DA727PF-A75 PD45128441 PD45128441G5
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532DA727 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4532DA727 is an 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: µPD45128441 are assembled.


    Original     		PDF MC-4532DA727 32M-WORD 72-BIT MC-4532DA727 PD45128441 MC-4532DA727PF-A75 ra11b L 146 CB MC-4532DA727EF-A75 MC-4532DA727PF-A75 PD45128441G5

    EMP7128

    Abstract: ra8b M5237L nec 157c TLR124 UPD424260-70 ra5b max232 application CC112 CTLD8
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    CDC2509

    Abstract: ra5b pc133 sdram PC133R-333-542-b2 PC133 registered reference design AVC BA0 pc133 SDRAM DIMM PC133R-333-542 PC133R-333-542 VOLTAGE pc100 gerber
    Text: PC133 SDRAM Registered DIMM Design Specification Revision 1.0 May 1999 Prepared By IBM and Reliance Computer Corporation PC133 SDRAM Registered DIMM Design Specification Table of Contents 1. Product Description . 4


    Original     		PDF PC133 CDC2509 ra5b pc133 sdram PC133R-333-542-b2 PC133 registered reference design AVC BA0 pc133 SDRAM DIMM PC133R-333-542 PC133R-333-542 VOLTAGE pc100 gerber

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532DA727XFA 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description EO The MC-4532DA727XFA a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: µPD45128441 are assembled.


    Original     		PDF MC-4532DA727XFA 72-BIT MC-4532DA727XFA PD45128441 M01E0107

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532DA727 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE EO Description The MC-4532DA727 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: µPD45128441 are assembled.


    Original     		PDF MC-4532DA727 72-BIT MC-4532DA727 PD45128441 MC-4532DA727cts M01E0107

    ra11b

    Abstract: MC-4532DA727 MC-4532DA727EF-A75 MC-4532DA727PF-A75 MC-4532DA727XFA-A75 PD45128441 PD45128441G5 dq3cb
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532DA727 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE EO Description The MC-4532DA727 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: µPD45128441 are assembled.


    Original     		PDF MC-4532DA727 72-BIT MC-4532DA727 PD45128441 M01E0107 ra11b MC-4532DA727EF-A75 MC-4532DA727PF-A75 MC-4532DA727XFA-A75 PD45128441G5 dq3cb

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA727 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : µPD4564441 are assembled.


    Original     		PDF MC-4516DA727 16M-WORD 72-BIT MC-4516DA727 PD4564441 MC-4516DA727-A75

    JEDEC SPD No.21

    Abstract: RA11b 227A capacitor ra5b TSOP 66 Package TNETD jesd 21c PC266 64mx8 SSTV16857
    Text: JEDEC Standard No. 21–C Page 4.20.4–1 4.20.4– 184 PIN, PC1600/2100 DDR SDRAM REGISTERED DIMM DESIGN SPECIFICATION PC1600/2100 DDR SDRAM Registered DIMM Design Specification Revision 1.2 Release 11a Revision 1.2 JEDEC Standard No. 21–C Page 4.20.4–2


    Original     		PDF PC1600/2100 JEDEC SPD No.21 RA11b 227A capacitor ra5b TSOP 66 Package TNETD jesd 21c PC266 64mx8 SSTV16857

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532DA727 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4532DA727 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: µPD45128441 are assembled.


    Original     		PDF MC-4532DA727 72-BIT MC-4532DA727 PD45128441 MC-4532DA727EF-A75 MC-4532DA727PF-A75 MC-4532D. M01E0107

    MC-4532DA727XFA

    Abstract: MC-4532DA727XFA-A75 PD45128441 PD45128441G5
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532DA727XFA 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description EO The MC-4532DA727XFA a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: µPD45128441 are assembled.


    Original     		PDF MC-4532DA727XFA 72-BIT MC-4532DA727XFA PD45128441 MC-4532Dr MC-4532DA727XFA-A75 PD45128441G5

    SO DIMM 100 Pin Connector Pinout

    Abstract: CDC2510A SO DIMM DRAM 144 Pin Connector Pinout PC100-322-620 sdram pcb layout guide PC100-322-620R PC intel MOTHERBOARD CIRCUIT diagram intel 810 MOTHERBOARD pcb CIRCUIT diagram
    Text: PC SDRAM Registered DIMM Specification PC SDRAM Registered DIMM Specification REVISION 1.0 February, 1998 The information in this document is subject to change. Feb 98 1 of 50 Revision 1.0 PC SDRAM Registered DIMM Specification THIS SPECIFICATION IS PROVIDED "AS IS" WITH NO WARRANTIES


    Original     		PDF 30KHz 50KHz 100MHz 200ps SO DIMM 100 Pin Connector Pinout CDC2510A SO DIMM DRAM 144 Pin Connector Pinout PC100-322-620 sdram pcb layout guide PC100-322-620R PC intel MOTHERBOARD CIRCUIT diagram intel 810 MOTHERBOARD pcb CIRCUIT diagram

    ra2b

    Abstract: No abstract text available
    Text: TOSHIBA THMY7264E0LEG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264E0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF 864-WORD 72-BIT THMY7264E0LEG-75 THMY7264E0LEG TC59SM704FT 72-bit THMY7264E0LEG) ra2b

    D018

    Abstract: D019 D032 D051 THMY7264G0LEG-75 RA1B
    Text: TOSHIBA THMY7264G0LEG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264G0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMY7264G0LEG-75 864-WORD 72-BIT THMY7264G0LEG TC59SM704FT 72-bit D018 D019 D032 D051 RA1B

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C4001B 4M x 1Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS highspeed 4,194,304x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C4001B 110ns 130ns 150ns KM41C4001B 304x1 KM41C4001B-6 KM41C4001BPACKAGE

    D14-D17

    Abstract: 8js9 d45128841g5 m1408 mark code AVV MC-4516DA727LF-A75 uPD45128841 MC-4516DA727 MC-4516DA727EFA-A75 D45128
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA727LF is a 16,777,216 words by 72 bits synchronous dynam ic RAM module on which 18 pieces of 64M SDRAM: ,uPD4564441 are assembled, and the MC-4516DA727EFA is a 16,777,216 words by 72 bits


    OCR Scan     		PDF MC-4516DA727 16M-WORD 72-BIT MC-4516DA727LF uPD4564441 MC-4516DA727EFA uPD45128841 M168S-50A104 M14082EJ3V0DS00 C-4516DA727EFA] D14-D17 8js9 d45128841g5 m1408 mark code AVV MC-4516DA727LF-A75 MC-4516DA727 MC-4516DA727EFA-A75 D45128

    RA5B

    Abstract: D018 D019 D032 D051 THMY1GE2SB70
    Text: TO SH IBA THMY1GE2SB70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE2SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM824BFT DRAMs Top , 18 TC59SM804BFT DRAMs (Bottom) and PLL/Registers on a printed


    OCR Scan     		PDF THMY1GE2SB70 728-WORD 72-BIT TC59SM824BFT TC59SM804BFT 72-bit AuHMY1GE2SB70 RA5B D018 D019 D032 D051

    RA11b

    Abstract: RA5B D018 D019 D032 ra2b ra8b
    Text: TOSHIBA THMY51E0SA70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E0SA is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704AFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMY51 E0SA70 864-WORD 72-BIT THMY51E0SA TC59SM704AFT 72-bit RA11b RA5B D018 D019 D032 ra2b ra8b

    RA8A

    Abstract: D018 D019 D032 RA11b
    Text: TO SH IBA THMY51E0SA70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E0SA is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704AFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMY51 E0SA70 864-WORD 72-BIT THMY51E0SA TC59SM704AFT 72-bit RA8A D018 D019 D032 RA11b

    30h80

    Abstract: No abstract text available
    Text: TO SH IBA THMY1GE2SB70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE2SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMY1GE2SB70 728-word 72-bit TC59SM804BFT 72-bit 30h80

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY7264G0LEG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264G0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMY7264G0LEG-75 THMY7264G0LEG 864-word 72-bit TC59SM704FT 72-bit THMY7264G0LEG)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY51E2SA70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E2SA is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704AFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMY51E2SA70 THMY51E2SA 864-word 72-bit TC59SM704AFT 72-bit THMY51E2SA)

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 GDlSblS 755 KM41C4001B CMOS DRAM 4M x 1Bit C M O S Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS high speed 4,194,304x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM41C4001B KM41C4001B 304x1 110ns KM41C4001B-7 130ns KM41C4001B-8 KM41C4001B-6 150ns 20-LEAD

    RA5B

    Abstract: RA11b d044 D018 D019 D032 D033 D051 THMY1GE0SB70
    Text: TOSHIBA THMY1GE0SB70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE0SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMY1GE0SB70 728-WORD 72-BIT TC59SM804BFT 72-bit RA5B RA11b d044 D018 D019 D032 D033 D051

    RA11b

    Abstract: RA2B RA5B D018 d1835 D019 D032 D051 THMY7264E0LEG-75 RA8A
    Text: TOSHIBA THMY7264E0LEG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264E0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMY7264E0LEG-75 864-WORD 72-BIT THMY7264E0LEG TC59SM704FT 168-pin PC133 RA11b RA2B RA5B D018 d1835 D019 D032 D051 RA8A