diode r2m 26
Abstract: diode r2m HP 2530
Text: R2M / RY2 / RUC Industrial Electromagnetic Relays ● Relays of general application ● For plug-in sockets, 35 mm rail mount or on panel mounting ● Cadmium-free contacts ● R2M and RUC also for PCB and soldering connections ● AC and DC coils available
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E105728
diode r2m 26
diode r2m
HP 2530
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Untitled
Abstract: No abstract text available
Text: Industrial relays 105 Industrial relays Miniature industrial relays Industrial relays of small dimensions 106 R3 . 111 R4 . 115 RY2 . 120 R2M . 124
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RS35-3022-25-1005
RS50-3022-25-1110
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R2M diode
Abstract: Diode R2M std 202e 202E
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. R2M OVER VOLTAGE PROTACTION DIODE TECHNICAL SPECIFICATION BREAKDOWN VOLTAGE: 135-150V REVERSE SURGE CURRENT: 1A FEATURES DO - 15 • Excellent clamping capability • Low incremental surge resistance • High temperature soldering guaranteed:
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35-150V
250oC/10S/9
UL-94
100oC
15typ
R2M diode
Diode R2M
std 202e
202E
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Diode Zener R2M
Abstract: R2M zener diode
Text: R2M AVALANCHE DIODE D2 V RM : 130 Volts IZSM : 1.0 Amp. 100 µ s 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) FEATURES : * * * * 600 W surge capability at 1ms Excellent clamping capability Low zener impedance Fast response time : typically less than 1.0 ps from 0 volts to BV min.
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UL94V-O
MIL-STD-202,
Diode Zener R2M
R2M zener diode
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ZENER R2M
Abstract: Diode Zener R2M R2M zener diode R2M diode diode r2m 26 R2M 45 zener Diode R2M R2M 45 r2m 41- zener diode R2M* Avalanche Diode
Text: R2M AVALANCHE DIODE D2 V RM : 130 Volts IZSM : 1.0 Amp. 100 µ s 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) FEATURES : * * * * 600 W surge capability at 1ms Excellent clamping capability Low zener impedance Fast response time : typically less than 1.0 ps from 0 volts to BV min.
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UL94V-O
MIL-STD-202,
ZENER R2M
Diode Zener R2M
R2M zener diode
R2M diode
diode r2m 26
R2M 45 zener
Diode R2M
R2M 45
r2m 41- zener diode
R2M* Avalanche Diode
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Socket Accessories
Abstract: No abstract text available
Text: Mounting and sub-assemblies 240 of the relay and accessories in the socket Signalling / protecting module type M. Electromagnetic relays Removing the relay from the socket with a retrainer / retractor clip Retainer / retractor clip Description plate Screw terminals
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GZT80,
GZT92,
GZM80,
GZM92
GZS80,
GZS92
GZT80-0040
GZS-0040
GZT4-0040
GZT80-0035
Socket Accessories
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GZ80
Abstract: PW80 Diode R2M gw96 R2M diode rm84 ES50/3 gz92 RM85 RM87N
Text: 137 Sockets and accessories availability index RELAY Modules available with Sockets Solder terminals socket PCB terminals socket Screw terminals socket Retainer/ retractor clip Description plate RM84 GW80, PW80 GZ80, ES50/3 GZ80, ES50/3 MS16 TR RM85
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ES50/3
105oC
RM87N
RM87L
GZ80
PW80
Diode R2M
gw96
R2M diode
rm84
ES50/3
gz92
RM85
RM87N
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in6263
Abstract: coil gold detector circuit diagram OPA660 R2M diode transconductance amplifier spice OPA660AU REF200 2N2907 BUF601 OPA1013
Text: OPA 660 OPA660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● HIGH SLEW RATE: 3000V/µs ● VIDEO/BROADCAST EQUIPMENT ● COMMUNICATIONS EQUIPMENT ● LOW DIFFERENTIAL GAIN/PHASE
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OPA660
850MHz
OPA660
660-1GC
470pF
470pF
1N4007
in6263
coil gold detector circuit diagram
R2M diode
transconductance amplifier spice
OPA660AU
REF200
2N2907
BUF601
OPA1013
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IN6263
Abstract: AGC OPA660 R2M 45 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 sbos007
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
OPA660
IN6263
AGC OPA660
R2M 45
2N2907
OPA1013
OPA660AP
OPA660AU
REF200
sbos007
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AGC OPA660
Abstract: in6263 transconductance amplifier spice spice model 1n4148 DMF3068A operational amplifier discrete schematic 1n4148 spice model Group-Delay phase filter OTA operational transconductance amplifier pin configuration transistor 2n2907
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
OPA660
470pF
470pF
1N4007
AGC OPA660
in6263
transconductance amplifier spice
spice model 1n4148
DMF3068A
operational amplifier discrete schematic
1n4148 spice model
Group-Delay phase filter OTA
operational transconductance amplifier
pin configuration transistor 2n2907
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Modules A
Abstract: No abstract text available
Text: Altech Corporation 35 Royal Road Flemington, NJ 08822-6000 P 908.806.9400 • F 908.806.9490 www.altechcorp.com Altech Corp. 410-112013-5M Printed November 2013 Since 1984, Altech Corporation has grown to become a leading supplier of automation and industrial
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410-112013-5M
UL508
0-960W
Modules A
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opa1013 equivalent
Abstract: AGC OPA660 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 CCII APPLICATION 0525P
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
OPA660
opa1013 equivalent
AGC OPA660
2N2907
OPA1013
OPA660AP
OPA660AU
REF200
CCII APPLICATION
0525P
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IN6263
Abstract: 1N4007 BL transconductance amplifier spice 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 2N2907 spice
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
OPA660
IN6263
1N4007 BL
transconductance amplifier spice
2N2907
OPA1013
OPA660AP
OPA660AU
REF200
2N2907 spice
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2N2907
Abstract: OPA1013 OPA660 OPA660AP OPA660AU REF200 BUF601
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
OPA660
2N2907
OPA1013
OPA660AP
OPA660AU
REF200
BUF601
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opa660 spice
Abstract: ACF2101 equivalent SBOA047 BUF601
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
400MHz
OPA660
SBOA075
OPA660AP
OPA660AU
OPA660AU/2K5
SBOM113,
opa660 spice
ACF2101 equivalent
SBOA047
BUF601
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Basic principle of AC to DC conversion using SCR
Abstract: RE78
Text: BurrĆBrown Products from Texas Instruments OPA861 SBOS338C – AUGUST 2005 – REVISED JUNE 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high
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OPA861
SBOS338C
80MHz,
95mA/V)
OPA861
Basic principle of AC to DC conversion using SCR
RE78
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SCR POWER SUPPLY
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments OPA861 SBOS338A – AUGUST 2005 – REVISED FEBRUARY 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high
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OPA861
SBOS338A
80MHz,
95mA/V)
OPA861
SCR POWER SUPPLY
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ota amplifier
Abstract: bjt audio amplifier pcb layout REF200
Text: BurrĆBrown Products from Texas Instruments OPA861 SBOS338B – AUGUST 2005 – REVISED APRIL 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high
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OPA861
SBOS338B
80MHz,
95mA/V)
OPA861
ota amplifier
bjt audio amplifier pcb layout
REF200
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in6263
Abstract: BUF601
Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION
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OPA660
850MHz
400MHz
OPA660
in6263
BUF601
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ZENER R2M
Abstract: No abstract text available
Text: AVALANCHE ZENER DIODES WITH B I ILT-IN THYRISTOR AVALANCHE ZENER DIODES Absolute Maximum Ratings (TA=25°C) V rm Type No. IzSM W VZ (V) Ir V rm (A) Instantaneous Instantaneous <h A) m Current Max. Max. (V) Current RM25 40 50 3.0 60 to 70 5 20 1.0 135 to 180
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OCR Scan
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RZ1030
RZ1065
RZ1200
RZ1225
RZ1175
RZ1125
RZ1150
PZ227
PZ427
PZ628
ZENER R2M
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ZENER R2M
Abstract: RY24 ZENER R2M 30 R2M zener RM25 RY23 PZ628 RM26 z127 PZ-628
Text: AVALANCHE ZENER DIODES WITH BUILT-IN THYRISTOR AVALANCHE ZENER DIODES Absolute Maximum Ratings (TA=25°C) IzSM (A) Vz (V) (A) 1mA Instantaneous Instantaneous (HA) (HA) Current Max. Max. V rm Type No. (V) Current RM25 40 Ir V rm 50 3.0 60 to 70 5 20 130 1.0
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OCR Scan
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RZ1030
RZ1055
RZ1065
RZ1100
RZ1125
RZ1150
ZENER R2M
RY24
ZENER R2M 30
R2M zener
RM25
RY23
PZ628
RM26
z127
PZ-628
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BU508A
Abstract: BU508D transistor d 1991 ar T1185 philips bu508a transistor Bu508A
Text: N AMER PHILIPS/DISCRETE blE D • bb£3^31 D02A2b4 DEI BU508A BU508D SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed sw itching npn tran sisto r in S O T 93A envelope intended fo r use in h o rizontal d e flectio n c irc u its o f co lo u r television receivers. T he BU 508D has an integrated e fficien cy diode.
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D02A2b4
BU508A
BU508D
OT93A
BU508D
BU508D)
transistor d 1991 ar
T1185
philips bu508a
transistor Bu508A
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BDV66D
Abstract: BDV68 BDV68C BDV66C A11T darlington pair transistor BDV66A BDV67A M0433
Text: BDV66A; B _ JI BDV66C; D PHILIPS INTERNATIONAL SbE D • 711002b 0043370 S41 * P H I N ~ r -3 3 -y i DARLINGTON PO W ER TRANSISTO RS P-N-P epitaxial base Darlington transistors for audio output stages and general amplifier and switching
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OCR Scan
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BDV66A;
BDV66C;
711002b
m04337fl
T-33-3
BDV67A;
BDV66A
T-33-31
BDV66D
BDV68
BDV68C
BDV66C
A11T
darlington pair transistor
BDV67A
M0433
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J295
Abstract: BU705 BU705D
Text: I [ PHILIPS INTERNATIONAL MSE D E3 711QñHb OD3üñcí3 3 E3PHIN BU705 BU705D A T '3 3 - P SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivated npn pow er transistor in a S O T 9 3 A envelope, intended fo r use in horizontal deflection circuits o f television receivers. The B U 7 0 5 D has an integrated efficiency
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711QfiHt.
BU705
BU705D
T-33-P
OT93A
BU705D
BU705D)
J295
BU705
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