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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6013DPE R07DS0486EJ0200 Previous: REJ03G1535-0100 Rev.2.00 Jun 21, 2012 600V - 11A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.58  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		PDF RJK6013DPE R07DS0486EJ0200 REJ03G1535-0100) PRSS0004AE-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6013DPE R07DS0486EJ0200 Previous: REJ03G1535-0100 Rev.2.00 Jun 21, 2012 600V - 11A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.58  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		PDF RJK6013DPE R07DS0486EJ0200 REJ03G1535-0100) PRSS0004AE-B