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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQK2501YGDQA R07DS0312EJ0300 Previous: REJ03G1521-0200 Rev.3.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive • Low drive current


    Original     		RQK2501YGDQA R07DS0312EJ0300 REJ03G1521-0200) PLSP0003ZB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQK2501YGDQA R07DS0312EJ0300 Previous: REJ03G1521-0200 Rev.3.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive • Low drive current


    Original     		RQK2501YGDQA R07DS0312EJ0300 REJ03G1521-0200) PLSP0003ZB-A PDF