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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RQJ0201UGDQA R07DS0290EJ0500 Rev.5.00 Jan 10, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS on = 53 mΩ typ (VGS = –4.5 V, ID = –1.8 A) • Low drive current • High speed switching • 2.5 V gate drive	Original	RQJ0201UGDQA R07DS0290EJ0500 PLSP0003ZB-A	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: Preliminary Datasheet RQJ0201UGDQA R07DS0290EJ0500 Rev.5.00 Jan 10, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS on = 53 mΩ typ (VGS = –4.5 V, ID = –1.8 A) • Low drive current • High speed switching • 2.5 V gate drive

Original

RQJ0201UGDQA R07DS0290EJ0500 PLSP0003ZB-A

PDF