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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQJ0201UGDQA R07DS0290EJ0400 Previous: REJ03G1317-0300 Rev.4.00 Mar 28, 2011 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 53 m typ (VGS = –4.5 V, ID = –1.8 A)  Low drive current  High speed switching


    Original     		RQJ0201UGDQA R07DS0290EJ0400 REJ03G1317-0300) PLSP0003ZB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQJ0201UGDQA R07DS0290EJ0400 Previous: REJ03G1317-0300 Rev.4.00 Mar 28, 2011 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 53 m typ (VGS = –4.5 V, ID = –1.8 A)  Low drive current  High speed switching


    Original     		RQJ0201UGDQA R07DS0290EJ0400 REJ03G1317-0300) PLSP0003ZB-A PDF