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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6002DPE R07DS0214EJ0100 Rev.1.00 Jun 21, 2012 600V - 2A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting


    Original
    RJK6002DPE R07DS0214EJ0100 PRSS0004AE-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6002DPE R07DS0214EJ0100 Rev.1.00 Jun 21, 2012 600V - 2A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting


    Original
    RJK6002DPE R07DS0214EJ0100 PRSS0004AE-B PDF