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    RJK0452

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0452DPB R07DS0074EJ0102 Previous: REJ03G1764-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0452DPB R07DS0074EJ0102 REJ03G1764-0101) PTZZ0005DA-A Ava9044 RJK0452

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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0452DPB R07DS0074EJ0102 Previous: REJ03G1764-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0452DPB R07DS0074EJ0102 REJ03G1764-0101) PTZZ0005DA-A cur9044