Untitled
Abstract: No abstract text available
Text: RF2337 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description The RF2337 is a general purpose, low-cost RF amplifier
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RF2337
RF2337
6000MHz.
01GHz
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY65376-11: 2500 to 2570 MHz High Linearity, Active Bias Low Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure Low noise, high linearity systems Macro base stations Small cells RF_OUT
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SKY65376-11:
S2793a
202458D
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Untitled
Abstract: No abstract text available
Text: RMPA0951AT 3V Cellular CDMA Power Amplifier Module General Description Features The RMPA0951AT is a dual mode, small-outline Power Amplifier Module PAM for Cellular CDMA personal communication system applications. The PA is internallymatched to 50Ω and DC blocked which minimizes the use
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RMPA0951AT
RMPA0951AT
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RF1196
Abstract: DS1103
Text: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB
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RF1196SDM
RF1196
120dBm
28-pin
Module27409-9421
DS110330
RF1196
DS1103
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RF2334
Abstract: No abstract text available
Text: RF2334 4 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers GENERAL PURPOSE AMPLIFIERS
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RF2334
RF2334
4000MHz.
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Untitled
Abstract: No abstract text available
Text: RF2336 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description The RF2336 is a general purpose, low-cost RF amplifier
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RF2336
RF2336
3000MHz.
OT23-5
01GHz
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transistor marking code 1325
Abstract: R04003 ims pcb filtronic Solid State
Text: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency
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FPD1000AS
FPD1000AS
J-STD-020C,
transistor marking code 1325
R04003
ims pcb
filtronic Solid State
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Untitled
Abstract: No abstract text available
Text: RF2333 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description The RF2333 is a general purpose, low-cost RF amplifier
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RF2333
RF2333
6000MHz.
OT23-5
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band 1 duplexer
Abstract: RF1196 1085MHz umts duplexer LTE duplexer
Text: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB
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RF1196SDM
RF1196
120dBm
Comp27409-9421
DS110107
band 1 duplexer
RF1196
1085MHz
umts duplexer
LTE duplexer
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Untitled
Abstract: No abstract text available
Text: RF2336 4 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers GENERAL PURPOSE AMPLIFIERS
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RF2336
RF2336
3000MHz.
ope00
01GHz
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Untitled
Abstract: No abstract text available
Text: RF2335 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description The RF2335 is a general purpose, low-cost RF amplifier
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RF2335
RF2335
6000MHz.
OT23-5
mount55
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sky77506
Abstract: S2473
Text: DATA SHEET SKY65374-11: 1850 to 1915 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure Low noise, high linearity systems Macro base stations Small cells RF_OUT
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SKY65374-11:
S2793a
201966E
sky77506
S2473
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transistor SMD P1f
Abstract: Transistor p1f MARKING P1F SMD Transistor p1f p1f on FPD1000AS MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic
Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available
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FPD1000AS
FPD1000AS
R04003,
CB100
transistor SMD P1f
Transistor p1f
MARKING P1F
SMD Transistor p1f
p1f on
MIL-HDBK-263
T491B105M035AS7015
ON MARKING P1F
Filtronic
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grm36 murata
Abstract: GRM36 R04003 RR0816 TFL0510
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PC8211TK
PU10426JJ04V0DS
IR260
WS260
HS350
L044-435-1573
grm36 murata
GRM36
R04003
RR0816
TFL0510
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transistor SMD P2F
Abstract: smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 FPD1000AS T491B105M035AS7015 filtronic Solid State
Text: FPD1000AS Datasheet v3.0 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency
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FPD1000AS
FPD1000AS
J-STD-020C,
transistor SMD P2F
smd p2f transistor
smd code z16
transistor marking code 1325
transistor z14 smd
0604HQ-1N1
T491B105M035AS7015
filtronic Solid State
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bluetooth module BC4
Abstract: SP8T RFMD RF1193 SP8T switch package ghz SP10T switch GSM900 SP10T SP9T SP8T antenna switch GSM400
Text: RF1193A SP10T ANTENNA SWITCH MODULE QUADBAND GSM, QUADBAND UMTS Package Style: QFN, 26-pin, 3.0 mm x 3.8 mm x 0.85 mm Features Very Low Insertion Loss Best in Class Harmonic Attenuation with Integated LPF: ETSI Compliance
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RF1193A
SP10T
26-pin,
26-Pin
DS100608
bluetooth module BC4
SP8T RFMD
RF1193
SP8T switch package ghz
SP10T switch
GSM900
SP9T
SP8T antenna switch
GSM400
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PC8211TK
Abstract: 6-PIN marking f1
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8211TK SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The μPC8211TK is a silicon germanium SiGe monolithic integrated circuit designed as a low noise amplifier for GPS and mobile communications.
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PC8211TK
PC8211TK
WS260
HS350
PU10426EJ04V0DS
6-PIN marking f1
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY65373-11: 1710 to 1785 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure Low noise, high linearity systems Macro base stations Small cells VGC
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SKY65373-11:
201764C
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY65372-11: 699 to 748 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure Low noise, high linearity systems Macro base stations Small cells RF_OUT
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SKY65372-11:
S2793a
202981B
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BC-15
Abstract: No abstract text available
Text: RF1193 SP10T ANTENNA SWITCH MODULE QUADBAND GSM, QUADBAND UMTS Package Style: QFN, 26-pin, 3.0 mm x 3.8 mm Features Very Low Insertion Loss Best in Class Harmonic Attenuation with Integated LPF: ETSI Compliance Exceptional Linearity Performance
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RF1193
SP10T
26-pin,
26-Pin
DS100607
BC-15
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Untitled
Abstract: No abstract text available
Text: RF1480 SP8T SWITCH VDD SPI_CS SPI_CLK SPI_DATA AUX_SPI_VDD RoHS Compliant & Pb-Free Product Package Style: QFN, 20-pin, 3.5mmx3.5mm 20 19 18 17 16 Features ANT VDD =1.5V to 3.0V ̈ AuxSPI VDD =1.5V to 3.0V ̈ High Linearity IMD3 <108dBm, IMD2 <-103dBm Harmonics: -83dBcat1GHz
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RF1480
20-pin,
108dBm,
-103dBm
-83dBcat1GHz
DS090113
R04003
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HS350
Abstract: R04003
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: V42100 M/A-COM Surface Mount Voltage Controlled Oscillator WLAN 2050 - 2150 MHz Features • • • • LSM4 Package Miniature SMT Package Low Phase Noise Highly Linear Tuning +3V Operation Description The V42100 is a fundamental single ended oscillator designed for
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V42100
V42100
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