R. 012020
Abstract: No abstract text available
Text: R. 012085, R. 012020 www.vishay.com Vishay Draloric RF Power Tubular Capacitors with Mounting Tags, Class 1 Ceramic FEATURES • Small size • High reliability • Wide range of capacitance values APPLICATIONS • Induction and dielectric heating • Antenna units
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
R. 012020
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Product type marking code 039
Abstract: Vishay DaTE CODE R. 012020
Text: R. 012085, R. 012020 Vishay Draloric Tubular Capacitors, Tag Mounting RA 012085 RA 012020 2KVp 2KVp RB 012085 RB 012020 RE 012085 RE 012020 2KVp 2KVp 2KVp 2KVp 5 x 0.4 0.197 x 0.016 L3 0.5 (0.02) 0.5 (0.02) L1 ø 15 (0.591 DIA) L2 18 + 1 (0.709 + 0.04) 2.5 ± 0.2
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18-Jul-08
Product type marking code 039
Vishay DaTE CODE
R. 012020
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R756
Abstract: 0130R R. 012020
Text: R. 012085, R. 012020 Vishay Draloric Tubular Capacitors, Tag Mounting RA 012085 RA 012020 2KVp 2KVp RB 012085 RB 012020 2KVp 2KVp RE 012085 RE 012020 2KVp 2KVp 5 x 0.4 0.197 x 0.016 ø 15 (0.591 DIA) 0.5 (0.02) 0.5 (0.02) L3 L2 L1 18 + 1 (0.709 + 0.04) 2.5 ± 0.2
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16-Nov-01
R756
0130R
R. 012020
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R756
Abstract: No abstract text available
Text: R. 012085, R. 012020 Vishay Draloric Tubular Capacitors, Tag Mounting RA 012085 RA 012020 2KVp 2KVp RB 012085 RB 012020 RE 012085 RE 012020 2KVp 2KVp 2KVp 2KVp 5 x 0.4 0.197 x 0.016 L3 0.5 (0.02) 0.5 (0.02) L1 ø 15 (0.591 DIA) L2 18 + 1 (0.709 + 0.04) 2.5 ± 0.2
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16-Nov-01
R756
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R. 012020
Abstract: No abstract text available
Text: R. 012085, R. 012020 Vishay Draloric Tubular Capacitors, Tag Mounting RA 012085 RA 012020 2KVp 2KVp RB 012085 RB 012020 RE 012085 RE 012020 2KVp 2KVp 2KVp 2KVp 5 x 0.4 0.197 x 0.016 L3 0.5 (0.02) 0.5 (0.02) L1 ø 15 (0.591 DIA) L2 18 + 1 (0.709 + 0.04) 2.5 ± 0.2
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08-Apr-05
R. 012020
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Ceramic RF Power and HV Capacitors
Abstract: dwa 108 a kvp 42 DIODE KT 0803 K kvar schematic kvp 03 diode kvp 34 DIODE KVP 79 A dwa 108 Optoelectronics Device data
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book CERAMIC RF POWER AND HV CAPACITORS vishay DRALORIC vsD-db0048-0210 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vsD-db0048-0210
Ceramic RF Power and HV Capacitors
dwa 108 a
kvp 42 DIODE
KT 0803 K
kvar schematic
kvp 03 diode
kvp 34 DIODE
KVP 79 A
dwa 108
Optoelectronics Device data
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ADP5585ACPZ-00-R7
Abstract: No abstract text available
Text: FEATURES 16-element FIFO for event recording 10 configurable I/Os allowing functions such as Key pad decoding for a matrix of up to 5 x 5 11 GPIOs 5 × 6 with ADP5585ACxZ-01-R7 models Key press/release interrupts GPIO functions GPI with selectable interrupt level
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16-element
ADP5585ACxZ-01-R7
16-ball
16-lead
ADP5585
ADP5585ACPZ-00-R7
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keypad matrix
Abstract: relay KEC
Text: FEATURES FUNCTIONAL BLOCK DIAGRAM 16-element FIFO for event recording 10 configurable I/Os allowing for such functions as Keypad decoding for a matrix of up to 5 x 5 Key press/release interrupts GPIO functions GPI with selectable interrupt level 100 kΩ or 300 kΩ pull-up resistors
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ADP5586
ADP5586
10-input/output
16-Ball
1-20-2011-A
CB-16-10
keypad matrix
relay KEC
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LH1531M
Abstract: No abstract text available
Text: SPECNo. 1 E A 0 6 1 1 5 ISSUE: Sep. 20. 1995 ITENTAT IVEI SPECIFICATIONS ProductType Model 64 No. Output LCD Common Driver LH1531M ZZThis tentat ive specifications contains 17 pages including the cover and appendix. If you have any objectionsplease contact us before issuing purchasing order.
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LH1531M
LH1531M
SEC80
SEC240
SEC161
SEG80
SEC160
SEC81
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IBM "embedded dram"
Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys
Text: ABSTRACT MODERN DRAM ARCHITECTURES by Brian Thomas Davis Co-Chair: Assistant Professor Bruce Jacob Co-Chair: Professor Trevor Mudge Dynamic Random Access Memories DRAM are the dominant solid-state memory devices used for primary memories in the ubiquitous microprocessor systems of
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conn95]
64-Mbit
Woo00]
EE380
class/ee380/
Wulf95]
Xanalys00]
Yabu99]
IBM "embedded dram"
m5m4v4169
Intel 1103 DRAM
Nintendo64
IBM98
toshiba fet databook
dynamic memory controler
MOSYS eDRAM
"1t-sram"
MoSys
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3-mm LED
Abstract: Zener LED CIE1931 LED t
Text: Technical Data Sheet 3 mm Round LED T-1 264-15/T2C4-1NRB Features ․Popular T-1 colorless 3mm package. ․High luminous power. ․Typical chromaticity coordinates x=0.29, y=0.28 according to CIE1931. ․Bulk, available taped on reel. ․ESD-withstand voltage: up to 4KV
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264-15/T2C4-1NRB
CIE1931.
DLE-026-513
3-mm LED
Zener LED
CIE1931
LED t
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 3 mm Round LED T-1 264-15/T2C4-1NRB Features ․Popular T-1 colorless 3mm package. ․High luminous power. ․Typical chromaticity coordinates x=0.29, y=0.28 according to CIE1931. ․Bulk, available taped on reel. ․ESD-withstand voltage: up to 4KV
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264-15/T2C4-1NRB
CIE1931.
264-15/T2C4-1NRB
DLE-026-513
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73247
Abstract: No abstract text available
Text: 2014 | | CATALOGO GENERALE - GENERAL CATALOGUE | Via E. Fermi, 40/42 20090 Assago, MI | Italia Tel. +39 02 93977.1 Fax +39 02 93904565 [email protected] www.italweber.it CATALOGO GENERALE | 2014 2014 2014 | | CATALOGO GENERALE - GENERAL CATALOGUE | | CATALOGO
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4
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OCR Scan
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Q62702-A1036
Q62702-A1037
Q62702-A1038
Q62702-A1039
OT-23
BAR63
BAR63-04
fl235b05
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