10K3A1B
Abstract: 50K6A1B 30K5A1B 60857 30K5A 2.2K3A1B 1K7A1 50318 50K6A
Text: INTERCHANGEABLE BetaCURVE R Ð T SPECIFICATION .1K1A1 .3K1A1 1K2A1 100 Ohms @ 25ûC ± 0.2û -20 to 50ûC 300 Ohms @ 25ûC ± 0.2û -20 to 50ûC 1,000 Ohms @ 25ûC ± 0.2û 0 - 70ûC Temp. ûC. R Value (ohms) Temp. (ûC.) R Value (ohms) Temp. (ûC.) R Value
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4604
Abstract: 30014 B3950 14489 21502 335058 5275-05
Text: NNT_AF473H3950TRF Temperature ℃ -40 -35 -30 -25 -20 -15 -10 -5 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 R=47000Ω ±1% B=3950 ±3% R min R normal R max 1640644 1851375 2089065 1162495 1297889 1448971 835214 922999 1019948
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AF473H3950TRF
4604
30014
B3950
14489
21502
335058
5275-05
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68705
Abstract: 18458 28801 8908 Diode 20363 39818 5241 6906 9035
Text: NNT_AJ473H3950TRF Temperature ℃ -40 -35 -30 -25 -20 -15 -10 -5 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 R=47000Ω ±5% B=3950 ±3% R min R normal R max 1574327 1851375 2171749 1115508 1297889 1506323 801457 922999 1060322
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AJ473H3950TRF
68705
18458
28801
8908 Diode
20363
39818
5241
6906
9035
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Untitled
Abstract: No abstract text available
Text: REVISION R R IPS1-1XX-XX-XX-D-XX .058 1.46 REF DO NOT SCALE FROM THIS PRINT No OF POS PER ROW -02 THRU -25 No OF POS x .1000 [2.540] + .0150 [.381]) .010 [.25] R LEAD STYLE -01: STANDARD INSERTION (USE C-08-01-XXX) -L1: LOW INSERTION (USE C-17-01-XXX) (No OF POS -1) x
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C-08-01-XXX)
C-17-01-XXX)
C-XX-01-H)
C-XX-01-S)
C-XX-01-T)
C-XX-01-L)
E130i,
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Untitled
Abstract: No abstract text available
Text: POSITIVE THERMISTORS "Posi-R" For Overcurrent Protection F±1.5 F±1.5 φd T MAX. D MAX. 3MAX. 7MAX. φd F±1.5 Fig. 1 Formed Lead Type : Y T MAX. D MAX. 25 MIN. 25 MIN. 25 MIN. φd T MAX. 7MAX. D MAX. T MAX. 7MAX. 7MAX. D MAX. 25 MIN. T MAX. D MAX. φd
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290mAp-p
900mAp-p
ZPC47BX100B
100mAp-p
330mAp-p
730mAp-p
ZPC4MCE100F
210mAp-p
540mAp-p
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NTC SG 120
Abstract: A1004SG22P
Text: 2 1 ATP CURVE TEMP COEF @ 25°C: 3 `.25 .50 1 9.06 BETA: 25/85°C 3976 ±50 TEMPERATURE °C R t/R25 -50 -40 -30 -20 -10 10 20 25 30 40 50 60 70 80 85 90 100 110 120 125 667500 335600 176700 96970 55300 32650 19900 12490 10000 8056 5325 3601 2487 1752 1256
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t/R25
A1004SG22P0
Electronics\A1004SG22P0\A1004SG22P0
CAD\A1004SG22P0
NTC SG 120
A1004SG22P
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Untitled
Abstract: No abstract text available
Text: 200±.010 5.08±0.25 ,016±.002 —| (0.41 ±0.05) I 1 3 1 0 R F MOLDED CHOKES r-n •078±.010 (1.98±0,25) i W 2.520±.078 INCH (METRIC) (64.0±2.0) (MHz) SRF Min. (MHz) DCR Max. (o h m s ) R ated C urrent M ax.(m A ) 25 25 25 25 25 25 25 25 25 25 25
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270uH
HP4342A
HP4191A
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N283CH
Abstract: N1200CH N490CH S0609 N105PH12 N600CH TI 45-600 BLA06 n880ch
Text: Phase Control Thyristors ~ Capsule types Type V DRM V R R M I t AV ^T(R M S) Range T,55°C @ 25°C IT @25°C -^TSM(l) ^ TSM (2) 10ms 10ms I2t(2) di/dt Non- V r^60% VR^10V Re p/Rep 25°C ^RRM (Note 5) (Note 4) (A) (Note 1) (A2s) 1000/500 (Note 1) (Note 1)
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Ths55Â
Vrss60%
N086CHX
N105CHX
N170CHX
N195CHX
N275CHX
N282CHX
N281CHX
150/3ents.
N283CH
N1200CH
N490CH
S0609
N105PH12
N600CH
TI 45-600
BLA06
n880ch
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ms75085
Abstract: No abstract text available
Text: MOLDED RF CHOKES 9230 SER IES Test Fo R,dc Miller L jiH Q Freq. Min. Max. Number ± 10% Min, MHz MHz Ohms 9230-94 .10 40 25 690 .07 40 25 650 .08 9230-96 .12 38 25 600 .1 9230-00 .15 35 25 550 .12 9230-02 .18 33 25 510 .14 9230-04 .22 33 25 430 .16 9230-06
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50--N
M1L-C-15305,
ms75085
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23J2
Abstract: BAW32D BAY18 1N484 1n484a 1N456 1N457 1N461 1N462 1N483
Text: silicon signal diodes diodes de signal au silicium Type vF / v r -v r m >o m ax V max (m A) general purpose m ax (V) THOMSON-CSF iF |r (mA) m ax (nA) / C Styp m ax (pF) Vr (V) Casa usage général Tam b = 25°C 1N456 1N 456 A 1N457 1N 457 A 1N461 25 25- 30
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1N456
1N457
1N461
1N462
1N483
1N484
CB-26)
23J2
BAW32D
BAY18
1n484a
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WM103C
Abstract: No abstract text available
Text: Sensor Scientific, inc. N TC TH E R M IS TO R S INTERCHANGEABLE WAFER THERMISTORS 0 TO 70 C Resistance vs. Temperature Conversion Chart curve TEMP. D e g . C. 2 252 o h m s 25° C R e s is ta n c e c CURVE D 3000 o h m s tci> 25 ° C 5000 o h m s O' 25 °C .
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P303D
P503D
WM103C
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N ADS7825 4 Channel, 16-Bit Sampling CMOS A/D Converter FEATURES DESCRIPTION • 25|is max SAMPLING AND CONVERSION The ADS7825 can acquire and convert 16 bits to within ±2.0 LSB in 25 xs max while consuming only 50mW max. Laser-trimmed scaling resistors provide
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ADS7825
16-Bit
ADS7825
28-pin
17313b5
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Untitled
Abstract: No abstract text available
Text: B U R R - B R O W N <i [ ADS7825 ] www.burr-brown.com/databook/ADS7825.html 4 Channel, 16-Bit Sampling CMOS A/D Converter FEATURES DESCRIPTION • 25|is max SAMPLING AND CONVERSION The ADS7825 can acquire and convert 16 bits to within ±2.0 LSB in 25|0,s max while consuming only
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ADS7825
com/databook/ADS7825
16-Bit
ADS7825
28-pin
ZZ247
17313b5
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Untitled
Abstract: No abstract text available
Text: PALC22V1 OH-25/35 PALC22V1 OH-25/30/40 a TJ-0 > > r r OO 24-Pin Universal CMOS PAL Device ro to ló r o DISTINCTIVE CHARACTERISTICS < < _ L —L 0 0 I1 I I ro ro u i cn • Preloadable output registers for testability CMOS technology cuts power In half 90 mA
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PALC22V1
OH-25/35
OH-25/30/40
24-Pin
commercial/100
22V10
24-pln
28-pin
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17N800
Abstract: 130 N 300 t 250 n 1200 t 345
Text: Phase control thyristors Type It r m s m V drm It s m /i2dt Itavm/Ic V TO It (di/dt)cr tvi max Outline (dv/dt)cr V gt 1er R thJC DIN IEC 747-6 tVj = 25°C tvj = 25°C sinus V/us V mA °C/W °C V rrm V d sm V r sm =Vdrm =V r r m + 100 V V A 10 ms, 10 ms, I8 0 °e l
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60k830lb
Abstract: 61MQ40 60SB04S 30SB025S 30SB02S 30SB02SA 30SB03S 30SB03SA 30SB04S 30SB04SA
Text: - ft m ft £ % Vr s m 30SB04SA 30SB025S 31DQ03 31DQ04 31DQ05 BU an an BM B n an a n B * 4 '/ 9 B * i '/ 9 ~ Vr V (V) Io Tfc# If s m m ft ft m & Æ isj ( mA ) V r (V) T(°C) 25 25 25 25 25 j j j j j 30 250 30 250 30 20 20 30 30 40 25 j 125 j 25 j 125 j 25 j
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30SB02S
30SB02SA
30SB03S
30SB03SA
30SB04S
30SB04SA
30SB025S
60KQ40B
60KQ40E
60KQ50B
60k830lb
61MQ40
60SB04S
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60k830lb
Abstract: 61MQ40 i509 60KQ40E 60SB04S 30SB025S 30SB02S 30SB02SA 30SB03S 30SB03SA
Text: - ft m ft £ % Vr s m 30SB04SA 30SB025S 31DQ03 31DQ04 31DQ05 BU an an BM B n an a n B * 4 '/ 9 B * i '/ 9 ~ Vr V (V) Io Tfc# If s m m ft ft m & Æ isj ( mA ) V r (V) T(°C) 25 25 25 25 25 j j j j j 30 250 30 250 30 20 20 30 30 40 25 j 125 j 25 j 125 j 25 j
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30SB02S
30SB02SA
30SB03S
30SB03SA
30SB04S
30SB04SA
30SB025S
61M030
61MQ40
61MQ50
60k830lb
61MQ40
i509
60KQ40E
60SB04S
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Untitled
Abstract: No abstract text available
Text: THERMISTOR CONVERSION TABLES CURVE 1 RESISTANCE-TEMPERATURE CONVERSION TABLE R t/R 2s TEMP. X -4 0 Bt/R25 TEMP. R ,/R 25 X TEMP. °C R»/R25 TEMP. • y fl2 5 X CURVE 4 TEMP. °C RESISTANCE-TEMPERATURE CONVERSION TABLE Rt/R25 Rt/R 28 TEMP. R|/R25 °C TEMP.
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Bt/R25
Rt/R25
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12G821K
Abstract: R23G 112K 15g 561K 15G150k 15G 331K 12G681K 15G201K 12G220K 15G470K 23G181K
Text: am METAL OXIDE VARISTORS M a x im u m M ux M odel A p p lie d 4 C V rm s M ax T M ax L y6d M in W ± 1 T N R 7G 180K 5 \ T N R 7G 271K 7 ± 1 11 25 0 .5 5 T N R 7G 331K 7 \ T N R9G 150K 5 \ T N R 9G 271K 9 ± 1 13 25 0 .5 5 T N R 9G 331K 7 i T N R 9G 471K
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KD502
Abstract: KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46
Text: N lZ K O F R E K V E N C N l t r a n z i s t o r y n -p -n M e zn i hodnoty Typ h 21E h2/i>* le so p ii U c b max U cb V Uce V 101N U70 102N U70 103N U70 104N U70 10 20 20 20 20 25 25 25 105N U70 106N U70 107N U70 32 32 32 3 0 ’ 3 0 ') 30') 10 10 10 101NU71
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101NU70
102NU70
103NU70
104NU70
105NU70
106NU70
107NU70
101NU71
102NU71
103NU71
KD502
KU607
KU605
KFY18
KD503
KF517
KC507
KU608
KD3055
KFY46
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Untitled
Abstract: No abstract text available
Text: B U R R - B R O W N <i [ ADS7824 ] 2 www.burr-brown.com/databook/ADS7824.html 4 Channel, 12-Bit Sampling CMOS A/D Converter FEATURES DESCRIPTION • 25|is max SAMPLING AND CONVERSION T h e A D S 7824 can acquire and con v ert 12 bits to w ithin ±0.5 LSB in 25|0,s m ax w hile consum ing only
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ADS7824
com/databook/ADS7824
12-Bit
ZZ247
17313b5
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CXC320
Abstract: TB 5843 CXC20C cxc400 CXC300 CXC81 CXC18C CXC935 CXC11 100A249
Text: R ectifier D iodes ~ Capsule types Type ^RRM Range ^F AV Ths55°C ^F(RMS) @ 25°C If @ 25°C I fSM(2) 10m s V R=s60% V R^ 1 0 V ^RRM (Note 2) (Note 2) I2t (2) 10m s I rrm (V) (A) (A) (A) (A) (A) (Note 2) (A2S) SWxCXC300 200-1500 650 1170 1000 5500 6050 183 x 103
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Ths55
SWxCXC300
SWxCXC320
SWxCXC380
SWxCXC400
SWxCXC470
SWxCXC445
SWxCXC565
SWxCXC350
SWxCXC515
CXC320
TB 5843
CXC20C
cxc400
CXC300
CXC81
CXC18C
CXC935
CXC11
100A249
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60k830lb
Abstract: 61MQ40 AM-36 30SB025S 30SB02S 30SB02SA 30SB03S 30SB03SA 30SB04S 30SB04SA
Text: - ft m ft £ % Vr s m 30SB04SA 30SB025S 31DQ03 31DQ04 31DQ05 BU an an BM B n an a n B * 4 '/ 9 B * i '/ 9 ~ * 4 '/ 9 B *4v 9 - Vr V (V) Io Tfc# If s m m ft ft m & Æ isj ( mA ) V r (V) T(°C) 25 25 25 25 25 j j j j j 30 250 30 250 30 20 20 30 30 40 25 j
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30SB02S
30SB02SA
30SB03S
30SB03SA
30SB04S
30SB04SA
30SB025S
60KQ60E
60SB03S
60SB04S
60k830lb
61MQ40
AM-36
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2N5070
Abstract: LA 4440 IC t 3866 power transistor 32-NF-2A-Thread LA 4127 2N3927 to60 2N5026 TO128 PACKAGE c 3866 transistor
Text: 2N5070 SIL IC O N NPN V H F POWER T R A N S IST O R Emitter Internally Grounded to Case Intermodulation Distortion Better than 30 dB at 25 W P.E.P Emitter Resistor Stabilised mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 65 V
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2N5070
10/32-NF-2A-Thread
O-117
O-128
O-131
O-129
2N5070
LA 4440 IC
t 3866 power transistor
32-NF-2A-Thread
LA 4127
2N3927
to60
2N5026
TO128 PACKAGE
c 3866 transistor
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