Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    QM200DYH Search Results

    QM200DYH Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    QM200DY-H Unknown Power and Industrial Semiconductors Data Book Scan PDF
    QM200DY-HB Mitsubishi TRANSISTOR MODULE Original PDF
    QM200DY-HB Unknown Power and Industrial Semiconductors Data Book Scan PDF
    QM200DY-HBK Mitsubishi 100A - transistor module for medium power switching use, insulated type Original PDF
    QM200DY-HK Mitsubishi 100A - transistor module for medium power switching use, insulated type Original PDF

    QM200DYH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode B2x

    Abstract: E80276 QM200DY-HB
    Text: MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-HB • • • • • IC Collector current . 200A VCEX Collector-emitter voltage . 600V hFE DC current gain. 750


    Original
    PDF QM200DY-HB E80276 E80271 400mA Diode B2x E80276 QM200DY-HB

    qm200dy-hk

    Abstract: QM200DY-H QM200d
    Text: MITSUBISHI TRANSISTOR MODULES ? QM200DY-HK HIGH POWER SWITCHING USE INSULATED TYPE • lc • • • • Collector current. 200A VCEX Coilector-emitter voltage. 8 0 0 V hFE DC current gain . 75


    OCR Scan
    PDF QM200DY-HK E80276 E80271 qm200dy-hk QM200DY-H QM200d

    LEI-4

    Abstract: Mitsubishi transistor ve32
    Text: MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE j QM200DY-HB 1Ic Collector c u rre n t.200A •V c e x Collector-em itter • hFE DC current g am . 750 . v o lta g e 600V


    OCR Scan
    PDF QM200DY-HB E80276 E80271 LEI-4 Mitsubishi transistor ve32

    qm300dy-h

    Abstract: qm50dy-h QM150DY-H QM1Q 150DY qm200dy-hk 150DY-HBK QM15 QM30d QM30c
    Text: Transistor modules Double arm ,center tap V cêx h *8 I j-r Type No. Pe Transistor section Ve *¥ e (sus) (V) (A) (A) (Wl p (A) 600 30 1.8 250 150 30 QMSOCY-H 600 50 3 310 150 QM75CY-H 600 75 4.5 350 150 QMtOOCY-H 600 100 6 620 150 100 QM150CY-H 600 150


    OCR Scan
    PDF QM75CY-H QM150CY-H QM30CY-H qm300dy-h qm50dy-h QM150DY-H QM1Q 150DY qm200dy-hk 150DY-HBK QM15 QM30d QM30c

    transistor eb 2030

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-HB lc Collector current. 200A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type


    OCR Scan
    PDF QM200DY-HB E80276 E80271 transistor eb 2030