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    onsemi QEB373ZR

    EMITTER IR 875NM 50MA SMD
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    DigiKey QEB373ZR Cut Tape 6,000 1
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    QEB373ZR Digi-Reel 6,000 1
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    onsemi QEB373GR

    EMITTER IR 875NM 50MA SMD
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    DigiKey QEB373GR Cut Tape 2,022 1
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    QEB373GR Digi-Reel 2,022 1
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    QEB373GR Reel 2,000 1,000
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    Mouser Electronics QEB373GR 1,990
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    onsemi QEB373

    EMITTER IR 875NM 50MA AXIAL
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    DigiKey QEB373 Bulk 540 1
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    onsemi QEB373YR

    EMITTER IR 875NM 50MA SMD
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    DigiKey QEB373YR Reel 1,000
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    onsemi QEB373.ZR

    Lamp, ired,880Nm Peak Wavelength, led-8D |Onsemi QEB373.ZR
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    Newark QEB373.ZR Reel 1,000
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    QEB373 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    QEB373 Fairchild Semiconductor Subminiature Plastic Infrared Emitting Diode Original PDF
    QEB373 Fairchild Semiconductor SUBMINIATURE PLASTIC INFRARED EMITTING DIODE Original PDF
    QEB373GR Fairchild Semiconductor Subminiature Plastic Infrared Emitting Diode; Package: T-3/4, 2mm Diode; No of Pins: 2; Container: Tape & Reel Original PDF
    QEB373GR Fairchild Semiconductor LED IRLED 880NM T/R Original PDF
    QEB373YR Fairchild Semiconductor Subminiature Plastic Infrared Emitting Diode; Package: T-3/4, 2mm Diode; No of Pins: 2; Container: Tape & Reel Original PDF
    QEB373YR Fairchild Semiconductor LED IRLED 880NM T/R Original PDF
    QEB373ZR Fairchild Semiconductor Subminiature Plastic Infrared Emitting Diode; Package: T-3/4, 2mm Diode; No of Pins: 2; Container: Tape & Reel Original PDF
    QEB373ZR Fairchild Semiconductor LED IRLED 880NM T/R Original PDF

    QEB373 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    QEB373

    Abstract: QSB363
    Text: QEB373 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE PACKAGE DIMENSIONS CATHODE 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) FEATURES 0.074 (1.9) • T-3/4 (2mm) Surface Mount Package • Tape & Reel Option (See Tape & Reel Specifications)


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    PDF QEB373 880nm, QSB363 00008A QEB373 QSB363

    QEB373

    Abstract: No abstract text available
    Text: QEB373 Subminiature Plastic Infrared Emitting Diode Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 880nm, AlGaAs


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    PDF QEB373 880nm, QSB363 QEB373

    QEB373

    Abstract: No abstract text available
    Text: QEB373 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE PACKAGE DIMENSIONS CATHODE 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) FEATURES 0.074 (1.9) • T-3/4 (2mm) Surface Mount Package • Tape & Reel Option (See Tape & Reel Specifications)


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    PDF QEB373 880nm, QSB363 00008A QEB373

    PLCC2 diode

    Abstract: QEB363 QEB373 QEB421 QEB441
    Text: Optoelectronics Surface Mount Light Emitting Diodes Ie @ 100 mA IF mW/sr IR @ 5 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp min max VF @ 100 mA IF (V) max QEB363 8 – 1.7 100 24 940 QEB373 16 – 1.9 100 24 880 IR @ 5 V VR


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    PDF QEB363 QEB373 QEB421 QEB441 PLCC2 diode QEB363 QEB373 QEB421 QEB441

    QEB373

    Abstract: QSB363
    Text: QEB373 Subminiature Plastic Infrared Emitting Diode Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 880nm, AlGaAs


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    PDF QEB373 880nm, QSB363 QEB373 QSB363

    QEB373

    Abstract: QSB363
    Text: QEB373 Subminiature Plastic Infrared Emitting Diode tm Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 880nm, AlGaAs


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    PDF QEB373 880nm, QSB363 QEB373 QSB363

    QEB373

    Abstract: No abstract text available
    Text: QEB373 Subminiature Plastic Infrared Emitting Diode Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 875nm, AlGaAs


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    PDF QEB373 875nm, QSB363 QEB373

    Infrared Phototransistor

    Abstract: QSB363 QEB363 QEB373
    Text: SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21)


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    PDF QSB363 QSB363 DS300357 Infrared Phototransistor QEB363 QEB373

    7402 ic configuration

    Abstract: QSB363
    Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor • Daylight Filter ■ Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package


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    PDF QSB363 QEB363 QEB373 7402 ic configuration

    Infrared Phototransistor

    Abstract: phototransistor 500-600 nm QEB373 "infrared phototransistor" all datasheet phototransistor QEB363 npn phototransistor QSB363
    Text: SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21)


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    PDF QSB363 QSB363 DS300357 Infrared Phototransistor phototransistor 500-600 nm QEB373 "infrared phototransistor" all datasheet phototransistor QEB363 npn phototransistor

    Infrared Phototransistor

    Abstract: c 5802 7402 ic configuration QSB363 QEB363 QEB373 IC 7402
    Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°


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    PDF QSB363 QSB363 QEB363 QEB373 Infrared Phototransistor c 5802 7402 ic configuration QEB373 IC 7402

    QEB363

    Abstract: QEB373 QSB363 QSB363C Infrared Phototransistor
    Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°


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    PDF QSB363C QSB363 QEB363 QEB373 QSB363C QEB373 Infrared Phototransistor

    QEB363

    Abstract: No abstract text available
    Text: QSB363 SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) SCHEMATIC COLLECTOR FEATURES .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6)


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    PDF QSB363 QEB363 QEB373 00009A

    all datasheet phototransistor

    Abstract: phototransistor 500-600 nm QEB363 QEB373 QSB363C
    Text: SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR QSB363C PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21) 0.004 (0.11)


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    PDF QSB363C QSB363C DS300233 all datasheet phototransistor phototransistor 500-600 nm QEB363 QEB373

    L14F1 phototransistor datasheet

    Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
    Text: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940


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    PDF QEC112 QEC113 QEC121 QEC122 QEC123 QED233 QED234 QED633 QED634 QED121 L14F1 phototransistor datasheet L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor

    QEB363

    Abstract: No abstract text available
    Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor • Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24°


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    PDF QSB363C QEB363 QEB373 QSB363

    Untitled

    Abstract: No abstract text available
    Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°


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    PDF QSB363C QSB363 QEB363 QEB373 QSB363C

    4n35 optocoupler spice model

    Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    PDF TS-16949 ISO-14001, 4n35 optocoupler spice model L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Light Emitting Diodes T- 3/4 2 mm Diode Package CATHODE 0.276 (7.0) MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) 0.118 (3.0) 0.102 (2.6) 0.055 (1.4) 0.008 (0.21) 0.004 (0.11)


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    PDF QEB363 QEB373 QEB421 QEB441

    QEB363

    Abstract: QEB373 QSB363C Infrared Phototransistor 01060
    Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor • Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24°


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    PDF QSB363C QEB363 QEB373 QSB363C QEB373 Infrared Phototransistor 01060

    L14F1 phototransistor datasheet

    Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
    Text: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions


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    PDF SE-171 L14F1 phototransistor datasheet l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3

    Optocoupler H22A1

    Abstract: how to interface optocoupler with triac a 2631 optocoupler QRE1113 QRD1114 2631 optocoupler Optocoupler with triac rain SENSOR MOC3023 H22A1
    Text: OPTOELECTRONICS A P P L I C AT I O N S BROCHURE IR Components Optocouplers LED Displays LED Lamps 2001 Multi-Market Products for a Changing World TM OPTOELECTRONICS APPLICATIONS BROCHURE TABLE OF CONTENTS Description Page VCR, Camcorder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    PDF D-82256 Optocoupler H22A1 how to interface optocoupler with triac a 2631 optocoupler QRE1113 QRD1114 2631 optocoupler Optocoupler with triac rain SENSOR MOC3023 H22A1

    024T1

    Abstract: No abstract text available
    Text: OPTOELECTRONICS SUBMINIATURE EMITTERS AND PHOTOSENSORS P a rt N um ber E m itte r s T -3 /4 087 i2.2l 071 il.S l I 7 0. MIN j rJ 024 1 ¿1 ,0i6 1 41 ! IB 3 O' 102 :2 6. : QEB363 t j oa.3 tiO'Ji 1 r \ n 1 , \ j ±12° 8 — mW/sr 1.6/20 100/5 1,3 16 —


    OCR Scan
    PDF QEB363 QEB373 024T1

    Untitled

    Abstract: No abstract text available
    Text: EO OPTOELECTRONICS SU BM IN IA TU RE E M IT T E R S AND P H O T O SEN SO R S P a r ! T-3/4 E m i s s i o n N i-m b * — .276 7 0 - - i .071 <1J) ! | (E m it t e » i>3 ^ <2 P o w f i UKÌH •M 1R' ^ R A \ \ Ì X ! {(,* A ¡¡i V 1 - St il >, N ote '21$ n


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    PDF QEB363 QEB373