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    SSH12N80

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS SSH12N80/70 FEATURES • Lower Rd sion • Improved inductive ruggedness • Fast sw itching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF SSH12N80/70 SSH12N80 SSH12N70 Q02fl3L4 7Tb4142 SSH12N80