laser SG-2000
Abstract: PULSED LASER DIODE DRIVER siemens 9606 laserdiode 905 905nm Plastic Pulsed Laser Diode PGEW2S09 Laser Diode 850nm 1300nm pulsed laser transmitter 1550 nm Laser-Diode 905nm 1S12
Text: Optoelectronic components Features max. pulse power ≥ 150 W @ 910 nm pulse lengths from < 1 ns to > 160 ns short rise and fall times max. pulse amplitude 80 – 100 A compact housing complete unit – no additional equipment needed adjustable pulse power optional
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D-82140
laser SG-2000
PULSED LASER DIODE DRIVER
siemens 9606
laserdiode 905
905nm Plastic Pulsed Laser Diode
PGEW2S09
Laser Diode 850nm 1300nm
pulsed laser transmitter 1550 nm
Laser-Diode 905nm
1S12
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PH1090-550S
Abstract: No abstract text available
Text: Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10µs Pulse, 1 % Duty PH1090-550S PH1090-550S Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10µs Pulse, 1% Duty 1 Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications
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PH1090-550S
PH1090-550S
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Radar
Abstract: diode gp 429 HV400
Text: HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty
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HVV1012-100
HVV1012-100
1025-1150Avionics
1025-1150MHz,
429-HVVi
Radar
diode gp 429
HV400
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diode gp 429
Abstract: HV400
Text: HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty
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HVV1012-100
HVV1012-100
1025-1150Avionics
1025-1150MHz,
429-HVVi
diode gp 429
HV400
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L-Band 1200-1400 MHz
Abstract: diode gp 429 Radar x band radar HV400
Text: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor
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HVV1214-075
HVV1214-075MHz,
HVV1214-075
429-HVVi
EG-01-PO08X4
L-Band 1200-1400 MHz
diode gp 429
Radar
x band radar
HV400
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IL6083
Abstract: IL6083N IL6083N-01 il6083 APPLICATION capacitor 68nf UT100 150hm
Text: IL6083, IL6083-01 PULSE WIDTH MODULATION MICROCIRCUIT OF POWER MOS TRANSISTOR Description of Main Functions: Microcircuit is the integrated circuit of the pulse width modulation controller for control of the power Nchannel MOS transistor, used a switch. Controller is
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IL6083,
IL6083-01
IL6083N
IL6083N-01)
IL6083
IL6083N
IL6083N-01
il6083 APPLICATION
capacitor 68nf
UT100
150hm
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Rf amplifier with frequency 1150 MHZ 20 db gain
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak
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MRF10500
MRF10150
MRF10150
Rf amplifier with frequency 1150 MHZ 20 db gain
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transistor j380
Abstract: motorola J122 j392 transistor j122 J122 transistor j113 equivalent ic 65 MHZ rf transmitter ON SEMICONDUCTOR J122
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak
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MRF10350
MRF10350
transistor j380
motorola J122
j392
transistor j122
J122 transistor
j113 equivalent ic
65 MHZ rf transmitter
ON SEMICONDUCTOR J122
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J135
Abstract: 552 transistor motorola J13-5
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF10502 Microwave Pulse Power Transistor Designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. 500 W PEAK 1025 – 1150 MHz MICROWAVE POWER
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MRF10502
Collect450
MRF10502
J135
552 transistor motorola
J13-5
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Untitled
Abstract: No abstract text available
Text: FSL137MRIN Green-Mode Fairchild Power Switch FPS Features Description • Advanced Soft Burst Mode for Low Standby Power and Low Audible Noise • Random Frequency Fluctuation (RFF) for Low EMI Pulse-by-Pulse Current Limit The FSL137MRIN is an integrated Pulse Width
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FSL137MRIN
FSL137MRIN
com/dwg/N0/N08F
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FSL137MRIN
Abstract: smps drain 6 7 8
Text: FSL137MRIN Green-Mode Fairchild Power Switch FPS Features Description • Advanced Soft Burst Mode for Low Standby Power and Low Audible Noise • Random Frequency Fluctuation (RFF) for Low EMI Pulse-by-Pulse Current Limit The FSL137MRIN is an integrated Pulse Width
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FSL137MRIN
FSL137MRIN
smps drain 6 7 8
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FSL137MRIN
Abstract: No abstract text available
Text: FSL137MRIN Green-Mode Fairchild Power Switch FPS Features Description • Advanced Soft Burst Mode for Low Standby Power and Low Audible Noise • Random Frequency Fluctuation (RFF) for Low EMI Pulse-by-Pulse Current Limit The FSL137MRIN is an integrated Pulse Width
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FSL137MRIN
FSL137MRIN
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RADAR
Abstract: PH1214-25M transistor 25 4 ghz transistor
Text: Radar Pulsed Power Transistor 25 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-25M PH1214-25M Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor
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PH1214-25M
PH1214-25M
RADAR
transistor 25
4 ghz transistor
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PH1214-220M
Abstract: Radar transistor 220
Text: Radar Pulsed Power Transistor 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-220M PH1214-220M Radar Pulsed Power Transistor - 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor
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PH1214-220M
PH1214-220M
Radar
transistor 220
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MSC1550M
Abstract: pulse power transistor
Text: GAE GREAT AMERICAN ELECTROINCS MSC1550M Silicon NPN pulse power transistor MSC1550M is designed for common base applications in short pulse output amplifier stages of telemetry, navigation systems and DME systems. Output Power: Frequency Range: Voltage: Package Type:
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MSC1550M
MSC1550M
FO-85
pulse power transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor Designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak
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MRF10500
MRF10350
MRF10070
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motorola MRF
Abstract: Motorola transistors MRF 150 watts power amplifier layout motorola MRF 220 motorola rf device motorola rf
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF1150MA MRF1150MB The RF Line Microwave Pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. 150 W PEAK, 960-1215 MHz MICROWAVE POWER
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MRF1150MA
MRF1150MB
motorola MRF
Motorola transistors MRF
150 watts power amplifier layout
motorola MRF 220
motorola rf device
motorola rf
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common base amplifier
Abstract: No abstract text available
Text: GAE GREAT AMERICAN ELECTROINCS MSC1075M/M RP0912-75 Silicon NPN pulse power transistor MSC1075M/MRP0912-75 is designed for Class B and C common base amplifier applications in short pulse transmitters or radio location stations, telemetry and DME systems. Output Power:
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MSC1075M/MRP0912-75
MSC1075M/MRP0912-75
FO-57C
25tion
common base amplifier
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1004MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • 4.0 W, 960-1215 MHz MICROWAVE POWER
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MRF1004MB
MRF1004MB
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RF power amplifier MHz
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak
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MRF10500
376B-0erial
MRF10150
RF power amplifier MHz
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transistor j380
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10350 The RF Line M icrowave Pulse Power Transistor . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 350 W PEAK 1025-1150 MHz MICROWAVE POWER
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MRF10350
F10350
350wPk
MRF10350
transistor j380
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1015MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. 15 W PEAK , 960-1215 MHz MICROWAVE POWER
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE PULSE WIDTH MODULATION CONTROL CIRCUIT Switchmode Pulse Width Modulation Control Circuit The TL494 is a fixed frequency, pulse width modulation control circuit designed primarily for SWITCHMODE power supply control.
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TL494
1408P-L00-3CB
TL494
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Untitled
Abstract: No abstract text available
Text: Avionics Pulsed Power Transistor PH1090-800S Preliminary 800 Watts, 1030-1090 MHz, 10 |is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation
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PH1090-800S
5b42E05
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